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US4920071A
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High temperature interconnect system for an integrated circuit
Assignee: National Semiconductor Corp
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Filing: 1987-08-18
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Granted: 1990-04-24
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Expires: 2007-08-18
Abstract
Abstract A semiconductor integrated circuit device is provided with an electrical interconnect system which is stable at high temperatures. The interconnect system employs refractory metal compounds which are electrically conductive, which form stable couples with silicon and compounds thereof, and which remain stable at temperatures exceeding approximately 500 DEG C.
Inventors
- 👤 Michael E. Thomas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:28
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063; H10W20/056; H10W20/071; H10W20/092; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; Y; Y10; Y10S; Y10S148/00; Y10S148/133
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
151 words
A method of inhibiting silicon transport from a doped silicon junction to a refractory metal contact in a semiconductor device by interposing a diffusion barrier layer of material selected from the group consisting of refractory metal nitrides, refractory metal borides and refractory metal carbides, between said doped silicon junction and said refractory metal contact, said method comprising the steps of: (a) forming a metal disilicide region in a contact region of said semiconductor device including the steps of: (i) depositing a layer of refractory metal into said contact regions; and (ii) heating said device; and (b) forming said diffusion barrier layer by converting at least a portion of said metal disilicide region to said barrier layer material including the steps of: (i) removing substantially all unreacted refractory metal; and (ii) heating said device in a gaseous element bearing ambient, said element selected from the group consisting of nitrogen, boron and carbon.
Claim 2
Independent Claim
151 words
A method of inhibiting silicon transport from a doped silicon junction to a refractory metal contact in a semiconductor device by interposing a diffusion barrier layer of material selected from the group consisting of refractory metal nitrides, refractory metal borides and refractory metal carbides, between said doped silicon junction and said refractory metal contact, said method comprising the steps of: (a) forming a metal disilicide region in a contact region of said semiconductor device including the steps of: (i) depositing a layer of refractory metal into said contact regions; and (ii) heating said device; and (b) forming said diffusion barrier layer by converting at least a portion of said metal disilicide region to said barrier layer material including the steps of: (i) removing substantially all unreacted refractory metal; and (ii) heating said device in a gaseous element bearing ambient, said element selected from the group consisting of nitrogen, boron and carbon.
Claim 3
Dependent Claim
80 words
The method in accordance with claim 1 additionally comprising the steps of: (e) forming a layer of refractory metal over an upper surface of said device and into said contact regions on said diffusion barrier layer; (f) forming a predetermined interconnect pattern in said refractory metal layer; (g) coating said predetermined interconnect pattern with a layer of an insulating material; and (h) heating the device in order to reflow said insulating layer to form a substantially planar upper surface thereon.
Claim 4
Dependent Claim
102 words
The method in accordance with claim 2 comprising the additional steps of: (i) forming a predetermined pattern of apertures in said insulating layer in a predetermined alignment scheme with respect to said interconnect pattern; (j) forming a second layer of refractory metal over the upper surface of said insulating layer into the apertures formed therein; (k) forming a second predetermined interconnect pattern in said second refractory metal layer; (l) coating said second predetermined interconnect pattern with a layer of an insulating material; and (m) heating the device in order to reflow said insulating layer to form a substantially planar upper surface thereon.
Claim 5
Dependent Claim
60 words
The method in accordance with claim 3 comprising the additional steps of: (n) forming a predetermined number of interconnect patterns by repeating steps (i) through (k); (o) coating the uppermost predetermined interconnect pattern with a layer of an insulating material; and (p) heating the device in order to reflow said insulating layer to form a substantially planar upper surface thereon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-04-23 | 1993-10-23 | 1994-04-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-23 | 1997-10-23 | 1998-04-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-23 | 2001-10-23 | 2002-04-24 | $7700.00 | Window Closed / Lapsed |