Molecular beam epitaxial growth device and molecular beam control method therein for exactly controlling thickness and composition of epitaxial film

Claim 2

A molecular beam control method in a molecular beam epitaxial growth device comprising the steps of: measuring a temperature T i of a molecular beam source cell; measuring an intensity V i of a molecular beam from said molecular beam source cell; converting the measured molecular beam intensity V i into a value V iO at a reference temperature T O by calculating the following equation using the measured molecular beam intensity V i and the measured cell temperature T i , ##EQU20## estimating a molecular beam intensity V O (t) at a time (t) after the last conversion time based on the reference temperature T O in accordance with the converted molecular beam intensity V iO and a corresponding time t i thereof; and controlling a temperature of said molecular beam source cell in accordance with an estimated cell temperature T SP (V SP ), to realize a predetermined molecular beam intensity V SP , given by calculating the following equation using the estimated molecular beam intensity V O (t) and the predetermined molecular beam intensity V SP , ##EQU21##

Claim 3

A molecular beam control method, as claimed in claim 1, wherein the step of measuring the temperature T i of said molecular beam source cell and the step of measuring the intensity V i of the molecular beam from said molecular beam source cell are carried out at the time of growing a buffer layer on a substrate, and the step of controlling the temperature of said molecular beam source cell is carried out at the time of growing a device layer on said substrate.

Claim 4

A molecular beam control method, as claimed in claim 1, wherein the step of measuring the temperature T i of said molecular beam source cell and the step of measuring the intensity V i of the molecular beam from said molecular beam source cell are carried out when stopping the growth of an epitaxial film.

Claim 5

A molecular beam control method, as claimed in claim 1, wherein said molecular beam control method is used for forming a compound semiconductor made of group III-V materials.

Claim 6

A molecular beam control method, as claimed in claim 4, wherein said group III materials include Aluminum, Gallium, or Indium, and said group V materials include Phosphorus, Antimony or Arsenic.

Claim 7

A molecular beam control method, as claimed in claim 4, wherein the step of measuring the temperature T i of said molecular beam source cell and the step of measuring the intensity V i of the molecular beam from said molecular beam source cell are carried out for only said group III materials.

Claim 8

A molecular beam control method in a molecular beam epitaxial growth device comprising the steps of: measuring a temperature T i of a molecular beam source cell; measuring an intensity V i of a molecular beam from said molecular beam source cell; converting the measured molecular beam intensity V i into a value V iO at a reference temperature T O by calculating the following equation using the measured molecular beam intensity V i and the measured cell temperature T i , ##EQU22## estimating a molecular beam intensity V O (t) at a time (t) after the last conversion time based on the reference temperature T O in accordance with the converted molecular beam intensity V iO and a corresponding time t i thereof; calculating a molecular beam intensity V SP (T SP ) at a cell temperature T SP by calculating the following equation using the estimated molecular beam intensity V O (t) and the cell temperature T SP at the time (t) of the estimated molecular beam intensity V O (t), ##EQU23## and controlling a shutter of said molecular beam source cell by using an integrated value relating to the time factor of the molecular beam intensity V SP (T SP ).

Claim 9

A molecular beam control method in a molecular beam epitaxial growth device comprising the steps of: measuring a temperature T i of a molecular beam source cell; measuring an intensity V i of a molecular beam from said molecular beam source cell; converting the measured molecular beam intensity V i into a value V iO at a reference temperature T O by calculating the following equation using the measured molecular beam intensity V i and the measured cell temperature T i , ##EQU22## estimating a molecular beam intensity V O (t) at a time (t) after the last conversion time based on the reference temperature T O in accordance with the converted molecular beam intensity V iO and a corresponding time t i thereof; calculating a molecular beam intensity V SP (T SP ) at a cell temperature T SP by calculating the following equation using the estimated molecular beam intensity V O (t) and the cell temperature T SP at the time (t) of the estimated molecular beam intensity V O (t), ##EQU23## and controlling a shutter of said molecular beam source cell by using an integrated value relating to the time factor of the molecular beam intensity V SP (T SP ).

Claim 10

A molecular beam control method, as claimed in claim 7, wherein the step of measuring the temperature T i of said molecular beam source cell and the step of measuring the intensity V i of the molecular beam from said molecular beam source cell are carried out at the time of growing a buffer layer of a substrate.

Claim 11

A molecular beam control method, as claimed in claim 7, wherein the step of measuring the temperature T i of said molecular beam source cell and the step of measuring the intensity V i of the molecular beam from said molecular beam source cell are carried out when stopping the growth of an epitaxial film.

Claim 12

A molecular beam control method, as claimed in claim 7, wherein said molecular beam control method is used for forming a compound semiconductor made of group III-V materials.

Claim 13

A molecular beam control method, as claimed in claim 10, wherein said group III materials include Aluminum, Gallium, or Indium, and said group V materials include Phosphorus, Antimony or Arsenic.

Claim 14

A molecular beam control method, as claimed in claim 10, wherein the step of measuring the temperature T i of said molecular beam source cell and the step of measuring the intensity V i of the molecular beam from said molecular beam source cell are carried out for only said group III materials.