US5279869A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Laser deposition of cubic boron nitride films
Assignee: Motors Liquidation Co
•
Filing: 1993-05-14
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Granted: 1994-01-18
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Expires: 2013-05-14
Abstract
Abstract Thin films of boron nitride are grown on single crystal silicon substrates using laser deposition techniques. The films are characterized by essentially a single crystal throughout and having a cubic structure which is in epitaxial registry with the underlying silicon substrate.
Inventors
- 👤 Gary L. Doll
- 👤 Jeffrey A. Sell
- 👤 Charles A. Peck
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 00:46
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/40; C30B29/403; H10P14/6349; H10P14/68; Y; Y10; Y10T; Y10T428/00; Y10T428/31504; Y10T428/31678
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
77 words
A method of producing a cubic boron nitride film on a substrate comprising, directing an excimer laser on a target comprising boron atoms to deposit cubic boron nitride on the substrate facing the target, providing a source of nitrogen atoms so that boron atoms from the target and nitrogen atoms from the source deposit on the substrate to form a cubic boron nitride film, and wherein said laser is operated from 1.5 to 5.2 J/cm 2 .
Claim 2
Independent Claim
77 words
A method of producing a cubic boron nitride film on a substrate comprising, directing an excimer laser on a target comprising boron atoms to deposit cubic boron nitride on the substrate facing the target, providing a source of nitrogen atoms so that boron atoms from the target and nitrogen atoms from the source deposit on the substrate to form a cubic boron nitride film, and wherein said laser is operated from 1.5 to 5.2 J/cm 2 .
Claim 3
Independent Claim
55 words
A method of producing a cubic boron nitride film on a substrate comprising: directing an excimer laser on a target comprising boron atoms and nitrogen atoms to deposit cubic boron nitride on said substrate facing said target, and wherein said laser is operated at a power density ranging from 1.5 to 5.2 J/cm 2 .
Claim 4
Independent Claim
55 words
A method of producing a cubic boron nitride film on a substrate comprising: directing an excimer laser on a target comprising boron atoms and nitrogen atoms to deposit cubic boron nitride on said substrate facing said target, and wherein said laser is operated at a power density ranging from 1.5 to 5.2 J/cm 2 .
Claim 5
Dependent Claim
25 words
A method as set forth in claim 2 wherein said film is deposited on a substrate and serves as a wear-resistant barrier to the substrate.
Claim 6
Dependent Claim
13 words
A method as set forth in claim 2 wherein said substrate comprises silicon.
Claim 7
Dependent Claim
19 words
A method as set forth in claim 2 wherein said cubic boron nitride film has a single crystal orientation.
Claim 8
Dependent Claim
23 words
A method as set forth in claim 2 wherein said laser is operated at a wavelength ranging from 193 nanometers to 248 nanometers.
Claim 9
Dependent Claim
24 words
A method as set forth in claim 2 wherein said excimer laser is operated at 10 pulses per second to 12,000 pulses per second.
Claim 10
Dependent Claim
28 words
A method as set forth in claim 2 wherein said step of directing an excimer laser on the target is conducted in the presence of a nitrogen atmosphere.
Claim 11
Dependent Claim
31 words
A method as set forth in claim 2 further comprising the steps of providing an additional source of nitrogen to make the nitrogen source in the film near stoichiometric with boron.
Claim 12
Dependent Claim
25 words
A method as set froth in claim 2 wherein the additional source of gas comprises a nitrogen gas stream having a purity of about 99.999%.
Claim 13
Dependent Claim
33 words
A method as set forth in claim 2 further comprising the step of providing a source of NH 3 gas to increase the nitrogen concentration in the films to be nearly stoichiometric boron.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-01-17 | 1997-07-19 | 1998-01-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-01-17 | 2001-07-19 | 2002-01-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-01-17 | 2005-07-19 | 2006-01-18 | $7700.00 | Window Closed / Lapsed |