Manufacturing process for semiconductor device

Claim 2

A manufacturing process for a semiconductor device comprising the steps of: spin-coating by a Spin-on method a solution for forming a SOG film on a top surface of a wafer having a device formed on the surface to form a coating of the SOG film forming solute thereon, wherein the solute is an inorganic silanol compound, an organic silanol compound or a mixture thereof; treating with a liquid applied to the film on said top surface by an edge rinse means located above said top surface of the wafer which is able to dissolve the solute for forming the SOG film at at least a peripheral edge part of the wafer which part is held by claws of a dry etching system at a later stage of wafer processing, thereby removing a coating of the SOG film forming solute at said peripheral part; and then baking the wafer to complete a SOG film.

Claim 3

A manufacturing process or a semiconductor device as set forth in claim 1, wherein the SOG film forming solute is a mixture of an inorganic silanol compound and 5 to 10 weight % of an organic silanol compound.

Claim 4

A manufacturing process for a semiconductor device as set forth in claim 1, wherein the coating of the SOG film forming solute is removed corresponding to a par of the wafer extending 2 to 4 mm from an outer peripheral edge of the wafer.

Claim 5

A manufacturing process for a semiconductor device as set forth in claim 1, wherein the liquid is an organic solvent selected form the group consisting of butyl cellosolve acetate, prophylene glycol monopropyl ether, ethyl cellosolve acetate, ethyl ethoxypropionate, cyclohexanone and N-methyl-2-pyrrolidone.

Claim 6

A manufacturing process for a semiconductor device comprising the following steps: spin-coating by a Spin-on method a solution for forming a SOG film on a wafer having a device formed on the surface to form a coating of the SOG film forming solute thereon; treating by a liquid which is able to dissolve the solute for forming SOG film at at least a peripheral part o the wafer which part is held by claws of a dry etching system at a later stage of wafer processing, thereby removing a coating of the SOG film forming solute at said peripheral part; and then baking the wafer to complete a SOG film, wherein the liquid is an aqueous buffered solution containing hydrofluoric acid.

Claim 7

A manufacturing process for a semiconductor device comprising the following steps: spin-coating by a Spin-on method a solution for forming a SOG film on a wafer having a device formed on the surface to form a coating of the SOG film forming solute thereon; treating by a liquid which is able to dissolve the solute for forming SOG film at at least a peripheral part o the wafer which part is held by claws of a dry etching system at a later stage of wafer processing, thereby removing a coating of the SOG film forming solute at said peripheral part; and then baking the wafer to complete a SOG film, wherein the liquid is an aqueous buffered solution containing hydrofluoric acid.

Claim 8

A manufacturing process for a semiconductor device comprising the following steps: spin-coating by a Spin-on method a solution for forming a SOG film on a wafer having a device formed on the surface to form a coating of the SOG film forming solute thereon; heating by a liquid which is able to dissolve the solute for forming SOG film at at least a peripheral part of the wafer which part is held by claws of a dry etching system at a layer stage of wafer processing, thereby removing a coating of the SOG film forming solute at said peripheral part; and then baking the wafer to complete a SOG film, wherein the lqiuid is an aqueous solution containing a mixture of ammonium fluoride and acetic acid.

Claim 9

A manufacturing process for a semiconductor device comprising the following steps: spin-coating by a Spin-on method a solution for forming a SOG film on a wafer having a device formed on the surface to form a coating of the SOG film forming solute thereon; heating by a liquid which is able to dissolve the solute for forming SOG film at at least a peripheral part of the wafer which part is held by claws of a dry etching system at a layer stage of wafer processing, thereby removing a coating of the SOG film forming solute at said peripheral part; and then baking the wafer to complete a SOG film, wherein the lqiuid is an aqueous solution containing a mixture of ammonium fluoride and acetic acid.

Claim 10

A manufacturing process or a semiconductor device comprising the steps of: spin-coating by a Spin-on method a solution for forming a SOG film on a top surface of a wafer having a device formed on the surface to form a coating of the SOG film forming solute thereon, wherein the solute is an inorganic silanol compound, an organic silanol compound or a mixture thereof; treating with a liquid applied to the film on said top surface by edge rinse means located groove said top surface of the wafer which is able to dissolve the solute for forming the SOG film at at least a peripheral edge part of the wafer which part is held by claws of a dry etching system at a later stage of wafer processing, thereby removing a coating of the SOG film forming solute at said peripheral part; and then baking the wafer to complete a SOG film wherein the liquid is an organic solvent selected from the group consisting of cyclohexanone, propylene glycol monopropyl ether and ethyl ethoxypropionate.

Claim 11

A manufacturing process or a semiconductor device comprising the steps of: spin-coating by a Spin-on method a solution for forming a SOG film on a top surface of a wafer having a device formed on the surface to form a coating of the SOG film forming solute thereon, wherein the solute is an inorganic silanol compound, an organic silanol compound or a mixture thereof; treating with a liquid applied to the film on said top surface by edge rinse means located groove said top surface of the wafer which is able to dissolve the solute for forming the SOG film at at least a peripheral edge part of the wafer which part is held by claws of a dry etching system at a later stage of wafer processing, thereby removing a coating of the SOG film forming solute at said peripheral part; and then baking the wafer to complete a SOG film wherein the liquid is an organic solvent selected from the group consisting of cyclohexanone, propylene glycol monopropyl ether and ethyl ethoxypropionate.