Mask structure for x-ray exposure and x-ray exposure device and method using it

Claim 2

A mask structure for X-ray exposure which comprises a retaining frame, a supporting frame, a mask support and an absorber pattern, said mask structure comprising means for detecting a change of acceleration of said mask structure from steady state.

Claim 3

The mask structure for X-ray exposure according to claim 1, wherein said mask structure is utilized for exposing plural regions on a wafer to X-rays one after another, and a change of acceleration of said mask structure occurs during movement of the wafer from one region to a next region.

Claim 4

The mask structure for X-ray exposure according to claim 1, which is used in a proximity exposure system.

Claim 5

The mask structure for X-ray exposure according to claim 1, further comprising an acceleration sensor, formed integrally with said supporting frame, for detecting acceleration of said supporting frame.

Claim 6

An X-ray exposure device using a mask structure for X-ray exposure according to claim 1, said X-ray exposure device comprising detecting means for detecting acceleration of said mask structure and a mask fall preventing mechanism, which operates in accordance with a signal obtained by said detecting means, for preventing a fall of said mask structure.

Claim 7

An X-ray exposure device using a mask structure for X-ray exposure according to claim 1, said X-ray exposure device comprising detecting means for detecting acceleration of said mask structure and a mask breakage preventing mechanism, which operates in accordance with a signal obtained by said detecting means, for preventing breakage of said mask structure.

Claim 8

A process of exposing plural regions on a wafer to X-rays using an X-ray mask structure which comprises a retaining frame, a supporting frame, a mask support and an absorber pattern, and which is utilized for exposing plural regions on a wafer to X-rays one after another, the mask structure further comprising detecting means for detecting a state change of the mask structure from its steady state during movement of the wafer from one region to the next region, said process comprising the steps of: locating the mask support and the absorber pattern of the mask structure with a gap between the mask structure and the wafer having one distance; exposing one region on the wafer to X-rays through the mask support and the absorber pattern of the mask structure; widening the gap having the one distance to a gap having another distance and moving the next region on the wafer to be exposed toward the area beneath the mask structure; narrowing the distance between the mask structure and the wafer to restore the latter gap to the former gap; and detecting recovery of the mask structure from a state change caused in said widening step and in said narrowing step to a steady state by the detecting means provided in the mask structure, and then exposing the next region to X-rays through the mask support and the absorber pattern.

Claim 9

A process of exposing plural regions on a wafer to X-rays using an X-ray mask structure which comprises a retaining frame, a supporting frame, a mask support and an absorber pattern, and which is utilized for exposing plural regions on a wafer to X-rays one after another, the mask structure further comprising detecting means for detecting a state change of the mask structure from its steady state during movement of the wafer from one region to the next region, said process comprising the steps of: locating the mask support and the absorber pattern of the mask structure with a gap between the mask structure and the wafer having one distance; exposing one region on the wafer to X-rays through the mask support and the absorber pattern of the mask structure; widening the gap having the one distance to a gap having another distance and moving the next region on the wafer to be exposed toward the area beneath the mask structure; narrowing the distance between the mask structure and the wafer to restore the latter gap to the former gap; and detecting recovery of the mask structure from a state change caused in said widening step and in said narrowing step to a steady state by the detecting means provided in the mask structure, and then exposing the next region to X-rays through the mask support and the absorber pattern.

Claim 10

A process of exposing plural regions on a wafer to X-rays using an X-ray mask structure which comprises a retaining frame, a supporting frame, a mask support and an absorber pattern, wherein the mask structure has a piezoelectric film formed on the surface of the mask support such that a change of bend quantity of the mask support from its steady state can be detected as an output voltage from the piezoelectric film, said process comprising the steps of: exposing one region on the wafer to X-rays through the mask support and the absorber pattern of the mask structure; moving a next region on the wafer to be exposed toward the area beneath the mask structure; and detecting recovery of the mask structure from a change of bending quantity caused in said moving step to a steady state by the piezoelectric film provided in the mask structure, and then exposing the next region to X-rays through the mask support and the absorber pattern.

Claim 11

A process of exposing plural regions on a wafer to X-rays using an X-ray mask structure which comprises a retaining frame, a supporting frame, a mask support and an absorber pattern, wherein the mask structure has a piezoelectric film formed on the surface of the mask support such that a change of bend quantity of the mask support from its steady state can be detected as an output voltage from the piezoelectric film, said process comprising the steps of: exposing one region on the wafer to X-rays through the mask support and the absorber pattern of the mask structure; moving a next region on the wafer to be exposed toward the area beneath the mask structure; and detecting recovery of the mask structure from a change of bending quantity caused in said moving step to a steady state by the piezoelectric film provided in the mask structure, and then exposing the next region to X-rays through the mask support and the absorber pattern.

Claim 12

A process of exposing plural regions on a wafer to X-rays using an X-ray mask structure which comprises a retaining frame, a supporting frame, a mask support and an absorber pattern, the mask structure comprising a piezoelectric film for detecting a change of acceleration of the mask structure from steady state, said process comprising the steps of: exposing one region on the wafer to X-rays through the mask support and the absorber pattern of the mask structure; moving a next region on the wafer to be exposed toward the area beneath the mask structure; and detecting recovery of the mask structure from a change of acceleration caused in said moving step to a steady state by the piezoelectric film provided in the mask structure, and then exposing the next region to X-rays through the mask support and the absorber pattern.

Claim 13

A process of exposing plural regions on a wafer to X-rays using an X-ray mask structure which comprises a retaining frame, a supporting frame, a mask support and an absorber pattern, the mask structure comprising a piezoelectric film for detecting a change of acceleration of the mask structure from steady state, said process comprising the steps of: exposing one region on the wafer to X-rays through the mask support and the absorber pattern of the mask structure; moving a next region on the wafer to be exposed toward the area beneath the mask structure; and detecting recovery of the mask structure from a change of acceleration caused in said moving step to a steady state by the piezoelectric film provided in the mask structure, and then exposing the next region to X-rays through the mask support and the absorber pattern.

Claim 14

A mask structure for X-ray exposure which comprises a retaining frame, a supporting frame, a mask support and an absorber pattern, said mask support being provided with a piezoelectric displacement sensor for sensing displacement.

Claim 15

A mask structure for X-ray exposure which comprises a retaining frame, a supporting frame, a mask support and an absorber pattern, said mask support being provided with a piezoelectric displacement sensor for sensing displacement.

Claim 16

A mask structure for X-ray exposure which comprises a retaining frame, a supporting frame, a mask support and an absorber pattern, said supporting frame being provided with an acceleration sensor for sensing acceleration.

Claim 17

A mask structure for X-ray exposure which comprises a retaining frame, a supporting frame, a mask support and an absorber pattern, said supporting frame being provided with an acceleration sensor for sensing acceleration.

Claim 18

A mask structure for X-ray exposure which comprises a retaining frame, a supporting frame, a mask support and an absorber pattern, and which is utilized for exposing plural regions on a wafer to X-rays one after another, said mask structure further comprising means for detecting a state change of said mask structure from its steady state during movement of the wafer from one region to the next region.

Claim 19

A mask structure for X-ray exposure which comprises a retaining frame, a supporting frame, a mask support and an absorber pattern, and which is utilized for exposing plural regions on a wafer to X-rays one after another, said mask structure further comprising means for detecting a state change of said mask structure from its steady state during movement of the wafer from one region to the next region.

Claim 20

The mask structure for X-ray exposure according to claim 12, which is used in a proximity exposure system.

Claim 21

The mask structure for X-ray exposure according to claim 12, wherein the state change is a change of bend quantity of said mask support.

Claim 22

The mask structure for X-ray exposure according to claim 13, wherein the state change is a change of bend quantity of said mask support.

Claim 23

The mask structure for X-ray exposure according to claim 14, wherein said detecting means detects a change of the bend quantity as an output voltage from a piezoelectric film formed on the surface of the mask support.

Claim 24

The mask structure for X-ray exposure according to claim 14, wherein said detecting means detects a change of the bend quantity as a change of capacitance between a wafer and an electrode formed on said surface of the mask support.

Claim 25

The mask structure for X-ray exposure according to claim 12, wherein the state change is a change of acceleration applied to said mask structure.

Claim 26

The mask structure for X-ray exposure according to claim 13, wherein the state change is a change of acceleration applied to said mask structure.

Claim 27

The mask structure for X-ray exposure according to claim 18, further comprising an acceleration sensor formed integrally with said supporting frame for detecting a change of the acceleration.

Claim 28

The mask structure for X-ray exposure according to claim 19, further comprising an acceleration sensor formed integrally with said supporting frame for detecting a change of the acceleration.

Claim 29

An X-ray exposure device using a mask structure for X-ray exposure according to claim 18, said X-ray exposure device comprising detecting means for detecting acceleration of said mask structure and a mask fall preventing mechanism, which operates in accordance with a signal obtained by said detecting means, for preventing a fall of said mask structure.

Claim 30

An X-ray exposure device using a mask structure for X-ray exposure according to claim 19, said X-ray exposure device comprising detecting means for detecting acceleration of said mask structure and a mask fall preventing mechanism, which operates in accordance with a signal obtained by said detecting means, for preventing a fall of said mask structure.

Claim 31

An X-ray exposure device using a mask structure for X-ray exposure according to claim 18, said X-ray exposure device comprising detecting means for detecting acceleration of said mask structure and a mask breakage preventing mechanism, which operates in accordance with a signal obtained by said detecting means, for preventing breakage of said mask structure.

Claim 32

An X-ray exposure device using a mask structure for X-ray exposure according to claim 19, said X-ray exposure device comprising detecting means for detecting acceleration of said mask structure and a mask breakage preventing mechanism, which operates in accordance with a signal obtained by said detecting means, for preventing breakage of said mask structure.

Claim 33

An X-ray exposure device using a mask structure for X-ray exposure according to claim 12, wherein said X-ray exposure device is controlled so as to begin exposure of a next region to X-rays after a detected state change of said mask structure has returned to a steady state.

Claim 34

The X-ray exposure device according to claim 26, wherein the state change is a change of bend quantity of said mask support.

Claim 35

The X-ray exposure device according to claim 26, wherein the state change is a change of acceleration of said mask support.

Claim 36

A mask structure for X-ray exposure which comprises a retaining frame, a supporting frame, a mask support and an absorber pattern, wherein said mask structure has a piezoelectric film formed on the surface of said mask support such that a change of bend quantity of said mask support from its steady state can be detected as an output voltage from said piezoelectric film.

Claim 37

A mask structure for X-ray exposure which comprises a retaining frame, a supporting frame, a mask support and an absorber pattern, wherein said mask structure has a piezoelectric film formed on the surface of said mask support such that a change of bend quantity of said mask support from its steady state can be detected as an output voltage from said piezoelectric film.

Claim 38

The mask structure for X-ray exposure according to claim 29, wherein said mask structure is utilized for exposing plural regions on a wafer to X-rays one after another, and said piezoelectric film comprises means for detecting a change of bend quantity of said mask structure during movement of the wafer from one region to a next region.

Claim 39

The mask structure for X-ray exposure according to claim 29, which is used in a proximity exposure system.

Claim 40

The mask structure for X-ray exposure according to claim 29, wherein said piezoelectric film is a barium titanate film.

Claim 41

The mask structure for X-ray exposure according to claim 32, further comprising another barium titanate film, which is laminated on said barium titanate film to change a polar direction.

Claim 42

An X-ray exposure device using a mask structure for X-ray exposure according to claim 29, said X-ray exposure device being controlled so as to begin exposure after a detected change of the bend quantity of said mask support has returned to a steady state.