US5350480A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Surface cleaning and conditioning using hot neutral gas beam array
Assignee: Aspect International Inc
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Filing: 1993-07-23
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Granted: 1994-09-27
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Expires: 2013-07-23
Abstract
Abstract An apparatus for generating large arrays of directed beams containing thermally excited, electrically neutral gas species, including vibrationally excited molecules, free radicals, and atoms, is disclosed. A heated plate in which a designed array of long, narrow channels are formed serves both to activate and collimate the gas species, and separates a high pressure reservoir of reactive gas from an evacuated region which serves as the material processing chamber. Selection of the appropriate reservoir pressure and channel geometry facilitates the thermal excitation of the reactive gas through collisions with hot channel walls, and the formation of directed non-collisional beams which may be readily transported through the evacuated chamber. The heated channel array plate is designed to allow good gas flux uniformity over a large target area by appropriately setting the pitch spacing and aspect ratio of the channels. Impingement of the thermally excited neutral gas species on a target material allows cleaning of surface contaminations and residues, removal of material surface layers without causing ballistic damage, or reactive modification of the surface layers. The directionality or angular divergence of the beams may be tuned to adjust the anisotropy of the surface cleaning and/or etching, allowing transport of thermally excited species into high aspect ratio target surface structures.
Inventors
- 👤 David C. Gray
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 19:39
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/27; H10P70/273; H10P72/00; H10P72/04; H10P72/0402; H10P72/0406; Y; Y10; Y10S; Y10S134/00; Y10S134/902
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
436 words
An apparatus for processing large area substrates, including semiconductor wafers, utilizing a hot neutral gas beam, said apparatus comprising: a processing chamber having a channel plate positioned therein and dividing said processing chamber into a high pressure reservoir on a first side of said channel plate and a vacuum chamber on a second and opposite side of said channel plate; a first gas means for supplying a first parent gas to said high pressure reservoir; a vacuum means connected to said processing chamber for generating a vacuum in said vacuum chamber; channel plate heating means for heating said channel plate to a desired operating temperature; said channel plate including a plurality of substantially perpendicular channels therein and each extending from said first side to said second side thereof, with said channels arranged in an array and spaced from each other, with the length of each channel substantially greater than the mean free path of the parent gas in said high pressure reservoir, and with the diameter of each channel no smaller than the mean free path of the parent gas in the high pressure reservoir; control means for controlling the pressure in said high pressure reservoir, the temperature of said channel plate, and the vacuum in said vacuum chamber such that the parent gas molecules travel through said channels in a collisional flow in an upstream portion of said channels adjacent said high pressure reservoir and become activated through contact with said heated channel plate within said channels, such that activated parent gas molecules travel through a downstream portion of said channels adjacent said vacuum chamber to form a collimated beam wherein substantially no contact with said channel plate occurs, such that a transition region between the collisional flow in said upstream channel portion to the collimated flow in said downstream channel portion exists within each channel, and with the channels having a pressure gradient therein such that the pressure of the activated parent gas exiting the downstream channel portion has a mean free path no less than the length of the channel and substantially larger than the diameter of the channel; and a substrate support positioned within said vacuum chamber, substantially aligned with the second side of said channel plate, adapted to support a substrate thereon, and spaced from said channel plate by a distance not substantially greater than the mean free path of the parent gas in said vacuum chamber; with the channels in said channel plate spaced from each other such as to generate a composite of the beams of activated, electrically neutral species of said parent gas directed toward said substrate support.
Claim 2
Independent Claim
436 words
An apparatus for processing large area substrates, including semiconductor wafers, utilizing a hot neutral gas beam, said apparatus comprising: a processing chamber having a channel plate positioned therein and dividing said processing chamber into a high pressure reservoir on a first side of said channel plate and a vacuum chamber on a second and opposite side of said channel plate; a first gas means for supplying a first parent gas to said high pressure reservoir; a vacuum means connected to said processing chamber for generating a vacuum in said vacuum chamber; channel plate heating means for heating said channel plate to a desired operating temperature; said channel plate including a plurality of substantially perpendicular channels therein and each extending from said first side to said second side thereof, with said channels arranged in an array and spaced from each other, with the length of each channel substantially greater than the mean free path of the parent gas in said high pressure reservoir, and with the diameter of each channel no smaller than the mean free path of the parent gas in the high pressure reservoir; control means for controlling the pressure in said high pressure reservoir, the temperature of said channel plate, and the vacuum in said vacuum chamber such that the parent gas molecules travel through said channels in a collisional flow in an upstream portion of said channels adjacent said high pressure reservoir and become activated through contact with said heated channel plate within said channels, such that activated parent gas molecules travel through a downstream portion of said channels adjacent said vacuum chamber to form a collimated beam wherein substantially no contact with said channel plate occurs, such that a transition region between the collisional flow in said upstream channel portion to the collimated flow in said downstream channel portion exists within each channel, and with the channels having a pressure gradient therein such that the pressure of the activated parent gas exiting the downstream channel portion has a mean free path no less than the length of the channel and substantially larger than the diameter of the channel; and a substrate support positioned within said vacuum chamber, substantially aligned with the second side of said channel plate, adapted to support a substrate thereon, and spaced from said channel plate by a distance not substantially greater than the mean free path of the parent gas in said vacuum chamber; with the channels in said channel plate spaced from each other such as to generate a composite of the beams of activated, electrically neutral species of said parent gas directed toward said substrate support.
Claim 3
Dependent Claim
38 words
The apparatus of claim 1 wherein the channels in said channel plate are substantially uniformly spaced from each other and generate a substantially uniform composite of the beams of activated, electrically neutral species of said first parent gas.
Claim 4
Dependent Claim
41 words
The apparatus of claim 1 wherein said channel plate heating means is a continuous resistive trace carried by said channel plate and extending in a serpentine pattern thereabout and an electrical source for passing an electrical current through said resistive trace.
Claim 5
Dependent Claim
26 words
The apparatus of claim 1 wherein said channel plate heating means is a source of infrared radiation which is spaced from and irradiates said channel plate.
Claim 6
Dependent Claim
32 words
The apparatus of claim 4 wherein said source of infrared radiation is positioned outside of said processing chamber and irradiates said channel plate through an infrared transparent window in said processing chamber.
Claim 7
Dependent Claim
44 words
The apparatus of claim 1 wherein said channel plate is formed of a susceptor material and wherein said channel plate heating means is a current carrying coil spaced from said channel plate and generating electromagnetic radiation which induces electrical currents in said channel plate.
Claim 8
Dependent Claim
17 words
The apparatus of claim 1 wherein said channel plate is formed of an inert, pure, non-metallic material.
Claim 9
Dependent Claim
17 words
The apparatus of claim 1 wherein said channel plate is formed of a high purity ceramic material.
Claim 10
Dependent Claim
28 words
The apparatus of claim 1 wherein said channel plate is formed of a material selected from the group consisting of boron nitride, silicon carbide, aluminum oxide and graphite.
Claim 11
Dependent Claim
28 words
The apparatus of claim 1 further including a channel plate support for mounting said channel plate within said processing chamber and means for cooling said channel plate support.
Claim 12
Dependent Claim
16 words
The apparatus of claim 1 further including means for controlling the temperature of said substrate support.
Claim 13
Dependent Claim
15 words
The apparatus of claim 1 wherein said first parent gas is a halogen bearing gas.
Claim 14
Dependent Claim
34 words
The apparatus of claim 12 wherein said first parent gas is selected from the group consisting of Cl 2 , HCl, ClF 3 , NF 3 , SF 6 , F 2 and HF.
Claim 15
Dependent Claim
40 words
The apparatus of claim 1 further including a second gas means for additionally supplying a second parent gas to said high pressure reservoir, with said first and second parent gases forming a parent gas mixture in said high pressure reservoir.
Claim 16
Dependent Claim
21 words
The apparatus of claim 14 wherein said second parent gas is selected from the group consisting of oxygen, nitrogen and hydrogen.
Claim 17
Dependent Claim
56 words
The apparatus of claim 1 further including an auxiliary gas means for supplying, in an isotropic manner, a background gas to said vacuum chamber, with said background gas selected to improve the directionality of materials removed from a substrate through the formation of passivating sidewall layers and sidewall deposits, or otherwise effecting the substrate surface chemistry.
Claim 18
Dependent Claim
64 words
The apparatus of claim 1 further including a radiation shield positioned within said vacuum chamber and adjacent and substantially parallel with the second side of said channel plate, with said radiation shield including therein an array of channels which match the array of channels in said channel plate, but with each radiation shield channel having a slightly larger diameter than each channel plate channel.
Claim 19
Dependent Claim
44 words
The apparatus of claim 1 wherein said channel plate covers a surface area smaller than a substrate positioned therebeneath, and wherein said apparatus further includes a motion means for moving the substrate support to thereby position the entire substrate surface beneath said channel plate.
Claim 20
Dependent Claim
32 words
The apparatus of claim 18 wherein said motion means is a rotation means for rotating the substrate support about a central axis extending perpendicular to the opposite side of said channel plate.
Claim 21
Dependent Claim
67 words
The apparatus of claim 1 wherein said channel plate is segmented into at least two separate segments, and with each segment defining a separate gas reservoir having associated therewith its own gas means for supplying a particular parent gas to each gas reservoir, and further including motion means for moving the substrate support to sequentially position the entire substrate surface beneath each of said channel plate segments.
Claim 22
Dependent Claim
32 words
The apparatus of claim 20 wherein said motion means is a rotation means for rotating the substrate support about a central axis extending perpendicular to the opposite side of said channel plate.
Claim 23
Dependent Claim
42 words
The apparatus of claim 1 further including an ultraviolet laser generating an ultraviolet laser beam, and raster means for raster scanning said laser beam across the surface of a substrate to facilitate surface chemical reactions, substrate heating and particle removal during processing.
Claim 24
Dependent Claim
76 words
The apparatus of claim 1 wherein the pressure in said high pressure reservoir is between about 0.01 torr and about 10 torr, the diameter of each channel in said channel plate is between about 0.1 mm and about 0.5 mm, the aspect ratio (length/diameter) of each channel in said channel plate is between about 5 and about 20, and the channel density in said channel plate is between about 0.1/cm 2 and about 10/cm 2 .
References Cited (Backward Citations)
US4540466A
Cited
US5108543A
Cited
US4901667A
Cited
US4774416A
Cited
US4734152A
Cited
US5108778A
Cited
US4886571A
Cited
US5174855A
Cited
US5108535A
Cited
US5110407A
Cited
US5288684A
Cited
US5188671A
Cited
US5248380A
Cited
US5286331A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-09-26 | 1998-03-28 | 1998-09-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-09-26 | 2002-03-28 | 2002-09-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-09-26 | 2006-03-28 | 2006-09-27 | $7700.00 | Window Closed / Lapsed |