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US5837564A
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Method for optimal crystallization to obtain high electrical performance from chalcogenides
Assignee: Micron Technology Inc
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Filing: 1995-11-01
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Granted: 1998-11-17
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Expires: 2015-11-01
Abstract
Abstract A method of fabricating a chalcogenide memory cell wherein a layer of chalcogenide material is deposited in an amorphous state. The layer of amorphous chalcogenide material is then etched to its final geometry while maintaining its amorphous structure. The final geometry of the chalcogenide material is then annealed thereby transforming it to a crystalline form.
Inventors
- 👤 Gurtej S. Sandhu
- 👤 Alan R. Reinberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 21:44
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10B; H10B63/00; H10B63/20; H10B63/80; H10N; H10N70/00; H10N70/011; H10N70/041; H10N70/061; H10N70/063; H10N70/20; H10N70/231; H10N70/801; H10N70/821; H10N70/826; H10N70/881; H10N70/882; H10N70/8828; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3238; H10P14/3241; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3431; H10P14/3432; H10P14/3436; H10P14/3451
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
63 words
A method of fabricating a plurality of individual chalcogenide elements, comprising the steps of: applying a layer of amorphous chalcogenide material onto a substrate; etching said layer of amorphous chalcogenide material to form a memory array comprising a plurality of individual amorphous chalcogenide elements; and transforming all of said individual amorphous chalcogenide elements in the memory array to a crystalline state at once.
Claim 2
Independent Claim
63 words
A method of fabricating a plurality of individual chalcogenide elements, comprising the steps of: applying a layer of amorphous chalcogenide material onto a substrate; etching said layer of amorphous chalcogenide material to form a memory array comprising a plurality of individual amorphous chalcogenide elements; and transforming all of said individual amorphous chalcogenide elements in the memory array to a crystalline state at once.
Claim 3
Dependent Claim
19 words
The method of claim 1, wherein said step of transforming comprises the step of annealing said amorphous chalcogenide elements.
Claim 4
Dependent Claim
40 words
The method of claim 2, wherein said step of annealing comprises the step of heating said amorphous chalcogenide elements to a temperature ranging from about 150 to 400° C. for a time period ranging from about 1 to 60 minutes.
Claim 5
Dependent Claim
33 words
The method of claim 1, wherein said chalcogenide material is selected from the group consisting of Se, Te, Ge, Sb and of compositions of at least two of Se, Te, Ge, and Sb.
Claim 6
Dependent Claim
43 words
The method of claim 4, wherein said chalcogenide material includes Te, Ge and Sb in the ratio Te a Ge b Sb 100- (a+b) where the subscripts are in atomic percentages which total 100% of the constituent elements and a ≦70 and 15≦b≦50.
Claim 7
Dependent Claim
9 words
The method of claim 5, wherein 40≦a≦60 and 17≦b≦44.
Claim 8
Independent Claim
96 words
A method of fabricating a plurality of chalcogenide memory cells, comprising the steps of: forming a plurality of current controlling devices on a substrate; applying a plurality of first electrodes on said respective current controlling devices; applying a layer of amorphous chalcogenide material onto said first electrodes; etching said layer of amorphous chalcogenide material to form a memory array comprising a plurality of amorphous chalcogenide elements; applying a plurality of second electrodes on said plurality of respective chalcogenide elements; and annealing all of said amorphous chalcogenide elements in the memory array to a crystalline state simultaneously.
Claim 9
Independent Claim
96 words
A method of fabricating a plurality of chalcogenide memory cells, comprising the steps of: forming a plurality of current controlling devices on a substrate; applying a plurality of first electrodes on said respective current controlling devices; applying a layer of amorphous chalcogenide material onto said first electrodes; etching said layer of amorphous chalcogenide material to form a memory array comprising a plurality of amorphous chalcogenide elements; applying a plurality of second electrodes on said plurality of respective chalcogenide elements; and annealing all of said amorphous chalcogenide elements in the memory array to a crystalline state simultaneously.
Claim 10
Dependent Claim
42 words
The method of claim 7, wherein said step of annealing comprises the step of heating said plurality of amorphous chalcogenide elements to a temperature ranging from about 150 to 400° C. for a time period ranging from about 1 to 60 minutes.
Claim 11
Dependent Claim
33 words
The method of claim 7, wherein said chalcogenide material is selected from the group consisting of Se, Te, Ge, Sb and of compositions of at least two of Se, Te, Ge, and Sb.
Claim 12
Dependent Claim
43 words
The method of claim 9, wherein said chalcogenide material includes Te, Ge and Sb in the ratio Te a Ge b Sb 100- (a+b) where the subscripts are in atomic percentages which total 100% of the constituent elements and a ≦70 and 15≦b≦50.
Claim 13
Dependent Claim
9 words
The method of claim 10, wherein 40≦a≦60 and 17≦b≦44.
Claim 14
Independent Claim
72 words
A method of fabricating a plurality of individual chalcogenide elements, comprising the steps of: forming a memory array comprising a plurality of individual chalcogenide elements on a substrate, said plurality of individual chalcogenide elements being formed in an amorphous state; and annealing all of said plurality of individual chalcogenide elements in the memory array simultaneously to transform said plurality of individual amorphous chalcogenide elements from said amorphous state to a crystalline state.
Claim 15
Independent Claim
72 words
A method of fabricating a plurality of individual chalcogenide elements, comprising the steps of: forming a memory array comprising a plurality of individual chalcogenide elements on a substrate, said plurality of individual chalcogenide elements being formed in an amorphous state; and annealing all of said plurality of individual chalcogenide elements in the memory array simultaneously to transform said plurality of individual amorphous chalcogenide elements from said amorphous state to a crystalline state.
Claim 16
Independent Claim
74 words
A method of fabricating a plurality of individual chalcogenide elements, consisting essentially of the steps of: forming a memory array comprising a plurality of individual chalcogenide elements on a substrate, said plurality of individual chalcogenide elements being formed in an amorphous state; and annealing all of said plurality of individual chalcogenide elements in the memory array simultaneously to transform said plurality of individual amorphous chalcogenide elements from said amorphous state to a crystalline state.
Claim 17
Independent Claim
74 words
A method of fabricating a plurality of individual chalcogenide elements, consisting essentially of the steps of: forming a memory array comprising a plurality of individual chalcogenide elements on a substrate, said plurality of individual chalcogenide elements being formed in an amorphous state; and annealing all of said plurality of individual chalcogenide elements in the memory array simultaneously to transform said plurality of individual amorphous chalcogenide elements from said amorphous state to a crystalline state.
Claim 18
Independent Claim
100 words
A method of fabricating a plurality of chalcogenide memory cells, comprising the steps of: forming a memory array comprising a plurality of individual elements on a substrate, each of said individual elements comprising: a current controlling device, a first electrode coupled to said current controlling device, a layer of amorphous chalcogenide coupled to said first electrode, and a second electrode coupled to said layer of amorphous chalcogenide; and annealing said layer of amorphous chalcogenide of each of said plurality of individual elements to transform each of said plurality of individual elements in the memory array to a crystalline state simultaneously.
Claim 19
Independent Claim
100 words
A method of fabricating a plurality of chalcogenide memory cells, comprising the steps of: forming a memory array comprising a plurality of individual elements on a substrate, each of said individual elements comprising: a current controlling device, a first electrode coupled to said current controlling device, a layer of amorphous chalcogenide coupled to said first electrode, and a second electrode coupled to said layer of amorphous chalcogenide; and annealing said layer of amorphous chalcogenide of each of said plurality of individual elements to transform each of said plurality of individual elements in the memory array to a crystalline state simultaneously.
Claim 20
Independent Claim
92 words
A method of fabricating a plurality of chalcogenide memory cells, comprising the steps of: forming a memory array comprising a plurality of individual elements on a substrate, each of said individual elements comprising: a current controlling device, a first electrode coupled to said current controlling device, a layer of amorphous chalcogenide coupled to said first electrode, and a second electrode coupled to said layer of amorphous chalcogenide; and transforming said layer of amorphous chalcogenide of each of said plurality of individual elements in the memory array to a crystalline state at once.
Claim 21
Independent Claim
92 words
A method of fabricating a plurality of chalcogenide memory cells, comprising the steps of: forming a memory array comprising a plurality of individual elements on a substrate, each of said individual elements comprising: a current controlling device, a first electrode coupled to said current controlling device, a layer of amorphous chalcogenide coupled to said first electrode, and a second electrode coupled to said layer of amorphous chalcogenide; and transforming said layer of amorphous chalcogenide of each of said plurality of individual elements in the memory array to a crystalline state at once.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-11-16 | 2002-05-18 | 2002-11-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-11-16 | 2006-05-18 | 2006-11-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-11-16 | 2010-05-18 | 2010-11-17 | $7700.00 | Window Closed / Lapsed |