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US5882994A
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Nonvolatile semiconductor memory, and method of manufacturing the same
Assignee: Toshiba Corp
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Filing: 1996-10-01
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Granted: 1999-03-16
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Expires: 2016-10-01
Abstract
Abstract A method of manufacturing the semiconductor memory comprises a plurality of steps. The steps include forming a first oxide film on a semiconductor substrate, forming a polysilicon electrode on the first oxide film by the sub-steps of forming a low impurity density polysilicon layer, forming a high impurity density polysilicon layer, and forming a low impurity density polysilicon layer in this order, and forming a second oxide film on the polysilicon electrode.
Inventors
- 👤 Yoshiko Araki
- 👤 Seiichi Mori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:42
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/30; H10B41/35; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0411; H10D30/60; H10D30/68; H10D30/6891; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2923; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
84 words
A method of manufacturing a nonvolatile semiconductor memory, comprising the steps of: (a) forming a first oxide film on a semiconductor substrate; (b) forming a polysilicon electrode on the first oxide film by sub-steps of forming a first low impurity density polysilicon layer, forming a high impurity density polysilicon layer, and forming a second low impurity density polysilicon layer in the named order; and (c) forming a second oxide layer on said polysilicon electrode in contact with the second low impurity density polysilicon layer.
Claim 2
Independent Claim
84 words
A method of manufacturing a nonvolatile semiconductor memory, comprising the steps of: (a) forming a first oxide film on a semiconductor substrate; (b) forming a polysilicon electrode on the first oxide film by sub-steps of forming a first low impurity density polysilicon layer, forming a high impurity density polysilicon layer, and forming a second low impurity density polysilicon layer in the named order; and (c) forming a second oxide layer on said polysilicon electrode in contact with the second low impurity density polysilicon layer.
Claim 3
Dependent Claim
28 words
The method of manufacturing a nonvolatile semiconductor memory according to claim 1, further comprising the step of: (d) forming a second polysilicon electrode above said second oxide layer.
Claim 4
Dependent Claim
22 words
The method of manufacturing a nonvolatile semiconductor memory according to claim 1, wherein the polysilicon electrode is formed by a LP-CVD method.
Claim 5
Dependent Claim
25 words
The method of manufacturing a nonvolatile semiconductor memory according to claim 1, wherein the impurity of each polysilicon layer of said polysilicon electrode is phosphorus.
Claim 6
Dependent Claim
24 words
The method of manufacturing a nonvolatile semiconductor memory according to claim 1, wherein each low impurity density polysilicon layer is a non-doped polysilicon layer.
Claim 7
Independent Claim
66 words
A method of manufacturing a nonvolatile semiconductor memory comprising the steps of: (a) forming a first oxide film on a semiconductor substrate; (b) forming a polysilicon layer containing a higher impurity content in an inner region, rather than in an upper outer surface region and a lower outer surface region on said first oxide film; and (c) forming a second oxide film on the polysilicon layer.
Claim 8
Independent Claim
66 words
A method of manufacturing a nonvolatile semiconductor memory comprising the steps of: (a) forming a first oxide film on a semiconductor substrate; (b) forming a polysilicon layer containing a higher impurity content in an inner region, rather than in an upper outer surface region and a lower outer surface region on said first oxide film; and (c) forming a second oxide film on the polysilicon layer.
Claim 9
Dependent Claim
28 words
The method of manufacturing a nonvolatile semiconductor memory according to claim 6, further comprising the step of: (d) forming a second polysilicon layer above the second oxide film.
Claim 10
Dependent Claim
22 words
The method of manufacturing a nonvolatile semiconductor memory according to claim 6, wherein the polysilicon layer is formed by a LP-CVD method.
Claim 11
Dependent Claim
30 words
The method of manufacturing a nonvolatile semiconductor memory according to claim 6, wherein the impurity is implemented into the high impurity content region of the polysilicon layer by ion implantation.
Claim 12
Dependent Claim
17 words
The method of manufacturing a nonvolatile semiconductor memory according to claim 9, wherein the impurity is phosphorus.
Claim 13
Dependent Claim
35 words
The method of manufacturing a nonvolatile semiconductor memory according to claim 6, further comprising the step of: removing a part of the polysilicon layer selectively followed by the step of forming the second oxide film.
Claim 14
Independent Claim
119 words
A method of manufacturing a nonvolatile semiconductor memory comprising: forming a first oxide layer on a semiconductor substrate; forming a first polysilicon electrode on said first oxide layer; forming a second oxide layer on said first polysilicon electrode; and forming a second polysilicon electrode above said second oxide layer, wherein said first polysilicon electrode comprises at least three polysilicon layers, a density of impurity of a first layer included in said first polysilicon electrode, contacting said first oxide layer, and a density of impurity of a second layer included in said first polysilicon electrode, contacting said second oxide layer, are lower than that of another layer other than said first and second layers included in said first polysilicon electrode.
Claim 15
Independent Claim
119 words
A method of manufacturing a nonvolatile semiconductor memory comprising: forming a first oxide layer on a semiconductor substrate; forming a first polysilicon electrode on said first oxide layer; forming a second oxide layer on said first polysilicon electrode; and forming a second polysilicon electrode above said second oxide layer, wherein said first polysilicon electrode comprises at least three polysilicon layers, a density of impurity of a first layer included in said first polysilicon electrode, contacting said first oxide layer, and a density of impurity of a second layer included in said first polysilicon electrode, contacting said second oxide layer, are lower than that of another layer other than said first and second layers included in said first polysilicon electrode.
Claim 16
Dependent Claim
25 words
The method of manufacturing a nonvolatile semiconductor memory according to claim 12, wherein the impurity of each layer of said first polysilicon electrode is phosphorus.
Claim 17
Dependent Claim
28 words
The method of manufacturing a nonvolatile semiconductor memory according to claim 12, wherein said first and second layers included in said first polysilicon electrode are non-doped polysilicon layer.
Claim 18
Independent Claim
78 words
A method of manufacturing a nonvolatile semiconductor memory, comprising the steps of: (a) forming a gate oxide film on a semiconductor substrate; (b) forming a first polysilicon layer as a floating gate having a center region with a higher impurity content than a top region and a bottom region on said gate oxide film; (c) forming an oxide film on the first polysilicon layer; (d) forming a second polysilicon layer as a control gate above the oxide film.
Claim 19
Independent Claim
78 words
A method of manufacturing a nonvolatile semiconductor memory, comprising the steps of: (a) forming a gate oxide film on a semiconductor substrate; (b) forming a first polysilicon layer as a floating gate having a center region with a higher impurity content than a top region and a bottom region on said gate oxide film; (c) forming an oxide film on the first polysilicon layer; (d) forming a second polysilicon layer as a control gate above the oxide film.
Claim 20
Dependent Claim
23 words
The method of manufacturing a nonvolatile semiconductor memory according to claim 15, wherein the first polysilicon layer is formed by a LP-CVD method.
Claim 21
Dependent Claim
29 words
The method of manufacturing a nonvolatile semiconductor memory according to claim 15, wherein the impurity is implemented into the center region of the first polysilicon layer by ion implantation.
Claim 22
Dependent Claim
17 words
The method of manufacturing a nonvolatile semiconductor memory according to claim 17, wherein the impurity is phosphorus.
Claim 23
Dependent Claim
42 words
The method of manufacturing a nonvolatile semiconductor memory according to claim 15, further comprising the step of: diffusing the impurity in the first polysilicon layer by a thermal process to provide a uniform density of the impurity in the first polysilicon layer.
References Cited (Backward Citations)
US4249968A
Cited
US5256894A
Cited
US5147813A
Cited
US5289026A
Cited
US5445982A
Cited
US5439838A
Cited
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