Patent US6120600A successfully refreshed from Google Patents.
US6120600A
Expired / Lapsed
US
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Double heterojunction light emitting diode with gallium nitride active layer
Assignee: Wolfspeed Inc
•
Filing: 1998-04-13
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Granted: 2000-09-19
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Expires: 2018-04-13
Abstract
Abstract A double heterostructure for a light emitting diode comprises a layer of aluminum gallium nitride having a first conductivity type; a layer of aluminum gallium nitride having the opposite conductivity type; and an active layer of gallium nitride between the aluminum gallium nitride layers, in which the gallium nitride layer is co-doped with both a Group II acceptor and a Group IV donor, with one of the dopants being present in an amount sufficient to give the gallium nitride layer a net conductivity type, so that the active layer forms a p-n junction with the adjacent layer of aluminum gallium nitride having the opposite conductivity type.
Inventors
- 👤 John A. Edmond
- 👤 Hua-Shuang Kong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 08:10
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10H20/8252; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/811
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
94 words
A method of producing an active layer of zinc and silicon compensated n-type gallium nitride for a double heterostructure light emitting diode that emits in the blue portion of the visible spectrum, the method comprising: introducing vaporized sources of gallium, nitrogen, silicon and zinc into a chemical vapor deposition system that includes a semiconductor substrate compatible with the growth of gallium nitride thereon; and while maintaining the temperature high enough to promote the epitaxial growth of zinc and silicon compensated gallium nitride, but lower than the temperature at which the gallium nitride would decompose.
Claim 2
Independent Claim
94 words
A method of producing an active layer of zinc and silicon compensated n-type gallium nitride for a double heterostructure light emitting diode that emits in the blue portion of the visible spectrum, the method comprising: introducing vaporized sources of gallium, nitrogen, silicon and zinc into a chemical vapor deposition system that includes a semiconductor substrate compatible with the growth of gallium nitride thereon; and while maintaining the temperature high enough to promote the epitaxial growth of zinc and silicon compensated gallium nitride, but lower than the temperature at which the gallium nitride would decompose.
Claim 3
Dependent Claim
32 words
A method according to claim 1 wherein the temperature is maintained lower than the temperature at which the surface morphology of the epitaxial layer would become unacceptable for further epitaxial growth thereon.
Claim 4
Dependent Claim
18 words
A method according to claim 1 wherein the temperature is maintained between about 800° C. and 1050° C.
Claim 5
Dependent Claim
20 words
A method according to claim 1 wherein the step of introducing a vaporized source of gallium comprises introducing trimethyl gallium.
Claim 6
Dependent Claim
19 words
A method according to claim 1 wherein the step of introducing a vaporized source of nitrogen comprises introducing ammonia.
Claim 7
Dependent Claim
20 words
A method according to claim 1 wherein the step of introducing a vaporized source of zinc comprises introducing diethyl zinc.
Claim 8
Dependent Claim
19 words
A method according to claim 1 wherein the step of introducing a vaporized source of silicon comprises introducing silane.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-09-19 | 2004-03-20 | 2004-09-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-09-19 | 2008-03-20 | 2008-09-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-09-19 | 2012-03-20 | 2012-09-19 | $7700.00 | Window Closed / Lapsed |