US6591394B2
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Three-dimensional memory array and method for storing data bits and ECC bits therein
Assignee: SanDisk Technologies LLC
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Filing: 2000-12-22
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Granted: 2003-07-08
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Expires: 2020-12-22
Abstract
Abstract A three-dimensional memory array and method for storing data bits and ECC bits therein is provided. A three-dimensional memory array of the type that includes multiple vertically-stacked layers of memory cells is described. The three-dimensional memory array comprises a plurality of memory cells arranged in a plurality of physically-independent sub-arrays, and data bits and error checking and correcting (ECC) bits of a word are stored in respective ones of the physically-independent sub-arrays. By spatially diffusing data bits and ECC bits from a word, the likelihood of multiple-bit errors within the word is reduced. This is advantageous since most ECC circuitry is capable of correcting only single-bit errors within a given word.
Inventors
- 👤 Thomas H. Lee
- 👤 James M. Cleeves
- 👤 Mark G. Johnson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 16:04
CPC Classifications
G; G06; G06F; G06F11/00; G06F11/07; G06F11/08; G06F11/10; G06F11/1008; G06F11/1072; H; H10; H10B; H10B99/00; H10B99/10
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
49 words
A three-dimensional memory array comprising a plurality of memory cells arranged in a plurality of physically-independent sub-arrays and storing a word of n data bits and p ECC bits, wherein each of the n data bits and p ECC bits is stored in respective ones of the physically-independent sub-arrays.
Claim 2
Dependent Claim
49 words
A three-dimensional memory array comprising a plurality of memory cells arranged in a plurality of physically-independent sub-arrays and storing a word of n data bits and p ECC bits, wherein each of the n data bits and p ECC bits is stored in respective ones of the physically-independent sub-arrays.
Claim 3
Dependent Claim
20 words
The three-dimensional memory array of claim 1 , wherein the three-dimensional memory array comprises a plurality of write-once memory cells.
Claim 4
Dependent Claim
33 words
The three-dimensional memory array of claim 1 , wherein the three-dimensional memory array is selected from the group consisting of a semiconductor-transistor-technology-based memory array, a magnetic-based memory array, and an organic-electronic-based memory array.
Claim 5
Dependent Claim
36 words
The three-dimensional memory array of claim 1 , wherein the three-dimensional memory array is part of a memory device comprising ECC code circuitry operative to generate the p ECC bits based on the n data bits.
Claim 6
Dependent Claim
32 words
The three-dimensional memory array of claim 1 , wherein the memory cells are arranged in a plurality of layers of memory cells stacked vertically above one another in a single integrated circuit.
Claim 7
Dependent Claim
16 words
The three-dimensional memory array of claim 1 , wherein each memory cell comprises exactly two terminals.
Claim 8
Dependent Claim
40 words
The three-dimensional memory array of claim 1 , wherein the three-dimensional memory array comprises a plurality of wires comprising wordlines and bitlines, and wherein each memory cell is connected to exactly two wires: the respective wordline and the respective bitline.
Claim 9
Dependent Claim
16 words
The three-dimensional memory array of claim 1 , wherein the memory cells comprise a semiconductor material.
Claim 10
Dependent Claim
32 words
The three-dimensional memory array of claim 1 , wherein the memory cells comprise a material selected from the group consisting of an organic polymer, a phase change material, and an amorphous solid.
Claim 11
Dependent Claim
51 words
The three-dimensional memory array of claim 1 , wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 12
Dependent Claim
36 words
The three-dimensional memory array of claim 1 in combination with a digital media storage device coupled with the three-dimensional memory array, the storage device operative to generate the p ECC bits from the n data bits.
Claim 13
Dependent Claim
31 words
The three-dimensional memory array of claim 11 , wherein the storage device is selected from the group consisting of a digital camera, a digital audio playback device, and digital audio book.
Claim 14
Independent Claim
78 words
A method for storing data bits and error checking and correcting (ECC) code bits in a three-dimensional memory array, the method comprising: providing a three-dimensional memory array comprising a plurality of memory cells arranged in a plurality of physically-independent sub-arrays; and storing a word of n data bits and p ECC bits in the three-dimensional memory array by storing each of the n data bits and p ECC bits in respective ones of the plurality of physically-independent sub-arrays.
Claim 15
Independent Claim
78 words
A method for storing data bits and error checking and correcting (ECC) code bits in a three-dimensional memory array, the method comprising: providing a three-dimensional memory array comprising a plurality of memory cells arranged in a plurality of physically-independent sub-arrays; and storing a word of n data bits and p ECC bits in the three-dimensional memory array by storing each of the n data bits and p ECC bits in respective ones of the plurality of physically-independent sub-arrays.
Claim 16
Dependent Claim
18 words
The method of claim 13 , wherein the three-dimensional memory array comprises a plurality of write-once memory cells.
Claim 17
Dependent Claim
31 words
The method of claim 13 , wherein the three-dimensional memory array is selected from the group consisting of a semiconductor-transistor-technology-based memory array, a magnetic-based memory array, and an organic-electronic-based memory array.
Claim 18
Dependent Claim
43 words
The method of claim 13 , wherein the three-dimensional memory array is part of a memory device comprising ECC code circuitry, and wherein the method further comprises generating the p ECC bits based on the n data bits with the ECC code circuitry.
Claim 19
Dependent Claim
30 words
The method of claim 13 , wherein the memory cells are arranged in a plurality of layers of memory cells stacked vertically above one another in a single integrated circuit.
Claim 20
Dependent Claim
14 words
The method of claim 13 , wherein each memory cell comprises exactly two terminals.
Claim 21
Dependent Claim
38 words
The method of claim 13 , wherein the three-dimensional memory array comprises a plurality of wires comprising wordlines and bitlines, and wherein each memory cell is connected to exactly two wires: the respective wordline and the respective bitline.
Claim 22
Dependent Claim
14 words
The method of claim 13 , wherein the memory cells comprise a semiconductor material.
Claim 23
Dependent Claim
30 words
The method of claim 13 , wherein the memory cells comprise a material selected from the group consisting of an organic polymer, a phase change material, and an amorphous solid.
Claim 24
Dependent Claim
49 words
The method of claim 13 , wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 25
Dependent Claim
29 words
The method of claim 13 further comprising generating the p ECC bits from the n data bits with a digital media storage device coupled with the three-dimensional memory array.
Claim 26
Dependent Claim
29 words
The method of claim 23 , wherein the storage device is selected from the group consisting of a digital camera, a digital audio playback device, and digital audio book.
Claim 27
Dependent Claim
61 words
A memory device comprising: a three-dimensional memory array comprising a plurality of memory cells arranged in a plurality of physically-independent sub-arrays; and error checking and correcting (ECC) code circuitry in communication with the three-dimensional memory array; wherein the memory device stores each bit of a word of n data bits and p ECC bits in respective ones of the physically-independent sub-arrays.
Claim 28
Dependent Claim
61 words
A memory device comprising: a three-dimensional memory array comprising a plurality of memory cells arranged in a plurality of physically-independent sub-arrays; and error checking and correcting (ECC) code circuitry in communication with the three-dimensional memory array; wherein the memory device stores each bit of a word of n data bits and p ECC bits in respective ones of the physically-independent sub-arrays.
Claim 29
Dependent Claim
19 words
The memory device of claim 25 , wherein the three-dimensional memory array comprises a plurality of write-once memory cells.
Claim 30
Dependent Claim
33 words
The memory device of claim 25 , wherein the three-dimensional memory array is selected from the group consisting of a semiconductor-transistor-technology based memory array, a magnetic-based memory array, and an organic-electronic-based memory array.
Claim 31
Dependent Claim
31 words
The memory device of claim 25 , wherein the memory cells are arranged in a plurality of layers of memory cells stacked vertically above one another in a single integrated circuit.
Claim 32
Dependent Claim
15 words
The memory device of claim 25 , wherein the memory cells comprise a semiconductor material.
Claim 33
Dependent Claim
31 words
The memory device of claim 25 , wherein the memory cells comprise a material selected from the group consisting of an organic polymer, a phase change material, and an amorphous solid.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-07-07 | 2007-01-06 | 2007-07-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-07-07 | 2011-01-06 | 2011-07-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-07-07 | 2015-01-06 | 2015-07-08 | $7700.00 | Window Closed / Lapsed |