US6607173B2
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US
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Film on a surface of a mold used during semiconductor device fabrication
Assignee: Micron Technology Inc
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Filing: 2002-07-31
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Granted: 2003-08-19
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Expires: 2022-07-31
Abstract
Abstract A film is provided on a mold used during semiconductor device fabrication through surface modifications to the mold to provide non-stick characteristics and a mold surface that is resistant to abrasion or wear. Such surface modifications are particularly useful in a mold having a quartz planar surface adapted to contact a photocurable polymer material applied to a semiconductor wafer surface during a fabrication process. The planar surface of the mold is capable of allowing transmission of ultraviolet light therethrough to cure the polymer material. A non-stick film is formed on the planar surface of the mold by a coating or deposition process in order to modify the mold surface. The non-stick film can be formed of a fluoroalkylsilane compound, or a hard material such as diamond or diamond-like carbon. The non-stick film of diamond or diamond-like carbon provides protection against abrasion or wear on the planar surface of the mold. In addition, the non-stick film of diamond or diamond-like carbon can be fluorine-terminated, or can have a coating layer of a fluoroalkylsilane compound formed thereover.
Inventors
- 👤 Donald L. Westmoreland
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:26
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/0002; B; B29; B29C; B29C33/00; B29C33/56; B82; B82Y; B82Y10/00; B82Y40/00; H; H10; H10W; H10W74/00; H10W74/01; H10W74/016
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
42 words
A film on a surface of a mold, the film comprising: a first layer comprising a material selected from the group consisting of diamond and diamond-like carbon; and a second layer over the first layer, the second layer comprising a fluoroalkylsilane compound.
Claim 2
Dependent Claim
42 words
A film on a surface of a mold, the film comprising: a first layer comprising a material selected from the group consisting of diamond and diamond-like carbon; and a second layer over the first layer, the second layer comprising a fluoroalkylsilane compound.
Claim 3
Dependent Claim
12 words
The film of claim 1 , wherein the first layer comprises diamond.
Claim 4
Dependent Claim
13 words
The film of claim 1 , wherein the first layer comprises diamond-like carbon.
Claim 5
Dependent Claim
15 words
The film of claim 1 , wherein the fluoroalkylsilane compound is a long chain fluoroalkyl-halosilane.
Claim 6
Dependent Claim
13 words
The film of claim 1 , wherein the second layer comprises heptadecafluoro-1,1,2,2-tetrahydrodecyl trichlorosilane.
Claim 7
Dependent Claim
13 words
The film of claim 1 , wherein the second layer comprises heptadecafluoro-1,1,2,2-tetrahydrodecyl dimethylchlorosilane.
Claim 8
Dependent Claim
13 words
The film of claim 1 , wherein the second layer comprises tridecafluoro-1,1,2,2-tetrahydrooctyl trichlorosilane.
Claim 9
Dependent Claim
19 words
The film of claim 1 , wherein the first and second layers allow transmission of radiant electromagnetic energy therethrough.
Claim 10
Dependent Claim
18 words
The film of claim 1 , wherein the first and second layers allow transmission of ultraviolet light therethrough.
Claim 11
Dependent Claim
62 words
A film on a surface of a mold used during semiconductor device fabrication, the film comprising: a first layer comprising a material selected from the group consisting of diamond and diamond-like carbon; and a second layer over the first layer, the second layer comprising a fluoroalkylsilane compound selected from the group consisting of: heptadecafluoro-1,1,2,2-tetrahydrodecyl trichlorosilane; heptadecafluoro-1,1,2,2-tetrahydrodecyl dimethylchlorosilane; tridecafluoro-1,1,2,2-tetrahydrooctyl trichlorosilane; and mixtures thereof.
Claim 12
Dependent Claim
62 words
A film on a surface of a mold used during semiconductor device fabrication, the film comprising: a first layer comprising a material selected from the group consisting of diamond and diamond-like carbon; and a second layer over the first layer, the second layer comprising a fluoroalkylsilane compound selected from the group consisting of: heptadecafluoro-1,1,2,2-tetrahydrodecyl trichlorosilane; heptadecafluoro-1,1,2,2-tetrahydrodecyl dimethylchlorosilane; tridecafluoro-1,1,2,2-tetrahydrooctyl trichlorosilane; and mixtures thereof.
Claim 13
Dependent Claim
12 words
The film of claim 10 , wherein the first layer comprises diamond.
Claim 14
Dependent Claim
13 words
The film of claim 10 , wherein the first layer comprises diamond-like carbon.
Claim 15
Dependent Claim
19 words
The film of claim 10 , wherein the first and second layers allow transmission of radiant electromagnetic energy therethrough.
Claim 16
Dependent Claim
18 words
The film of claim 10 , wherein the first and second layers allow transmission of ultraviolet light therethrough.
Claim 17
Dependent Claim
84 words
A film structure on a mold used during semiconductor device fabrication, comprising: a first layer on a planar quartz surface, the first layer comprising a material selected from the group consisting of diamond and diamond-like carbon; and a second layer over the first layer, the second layer comprising a material selected from the group consisting of: heptadecafluoro-1,4,2,2-tetrahydrodecyl trichlorosilane; heptadecafluoro-1,1,2,2-tetrahydrodecyl dimethylchlorosilane; tridecafluoro-1,1,2,2-tetrahydrooctyl trichlorosilane; and mixtures thereof; wherein the planar quartz surface, the first layer, and the second layer allow transmission of radiant electromagnetic energy therethrough.
Claim 18
Dependent Claim
84 words
A film structure on a mold used during semiconductor device fabrication, comprising: a first layer on a planar quartz surface, the first layer comprising a material selected from the group consisting of diamond and diamond-like carbon; and a second layer over the first layer, the second layer comprising a material selected from the group consisting of: heptadecafluoro-1,4,2,2-tetrahydrodecyl trichlorosilane; heptadecafluoro-1,1,2,2-tetrahydrodecyl dimethylchlorosilane; tridecafluoro-1,1,2,2-tetrahydrooctyl trichlorosilane; and mixtures thereof; wherein the planar quartz surface, the first layer, and the second layer allow transmission of radiant electromagnetic energy therethrough.
Claim 19
Dependent Claim
13 words
The film structure of claim 15 , wherein the first layer comprises diamond.
Claim 20
Dependent Claim
14 words
The film structure of claim 15 , wherein the first layer comprises diamond-like carbon.
Claim 21
Dependent Claim
25 words
The film structure of claim 15 , wherein the planar quartz surface, the first layer, and the second layer allow transmission of ultraviolet light therethrough.
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