US6814879B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming pattern
Assignee: Toshiba Corp
•
Filing: 2001-09-24
•
Granted: 2004-11-09
•
Expires: 2021-09-24
Abstract
Abstract A method of forming a pattern, which comprises forming a first resist film on a surface of a substrate, patterning the first resist film to form a first resist pattern, and forming a covering layer containing silicon or a metal on the first resist pattern by making use of a coating method using a solution containing a solvent which is incapable of dissolving the first resist.
Inventors
- 👤 Tsuyoshi Shibata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 13:59
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/20; G; G03; G03F; G03F7/00; G03F7/26; G03F7/40
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
143 words
A method of forming a pattern, comprising: forming a lower resist film over a surface of a substrate; forming an upper resist film on the lower resist film, said upper resist film being insoluble in water; patterning the upper resist film to form an upper resist pattern; forming a covering layer containing silicon or a metal on the upper resist pattern by a coating method using an aqueous solution of a water-soluble polymer containing silicon or a metal; etching or polishing a surface of the covering layer until a surface of the upper resist pattern is exposed, thereby allowing the covering layer to selectively remain in an open portion of the upper resist pattern; and etching the upper resist pattern and the lower resist film to form a lower resist pattern, using the covering layer remaining in the open portion as a mask.
Claim 2
Independent Claim
143 words
A method of forming a pattern, comprising: forming a lower resist film over a surface of a substrate; forming an upper resist film on the lower resist film, said upper resist film being insoluble in water; patterning the upper resist film to form an upper resist pattern; forming a covering layer containing silicon or a metal on the upper resist pattern by a coating method using an aqueous solution of a water-soluble polymer containing silicon or a metal; etching or polishing a surface of the covering layer until a surface of the upper resist pattern is exposed, thereby allowing the covering layer to selectively remain in an open portion of the upper resist pattern; and etching the upper resist pattern and the lower resist film to form a lower resist pattern, using the covering layer remaining in the open portion as a mask.
Claim 3
Dependent Claim
23 words
The method according to claim 1 , wherein said covering film contains one selected from the group consisting of silicon, Al, and Ti.
Claim 4
Dependent Claim
35 words
The method according to claim 2 , wherein said covering film contains one selected from the group consisting of a water-soluble polymer containing silicon, a water-soluble polymer containing alumina and a water-soluble polymer containing titania.
Claim 5
Dependent Claim
20 words
The method according to claim 3 , wherein said water-soluble polymer containing silicon comprises polysilsesquioxane or a water-soluble spin-on glass.
Claim 6
Dependent Claim
14 words
The method according to claim 1 , which further comprises heating the covering layer.
Claim 7
Dependent Claim
30 words
The method according to claim 1 , wherein said surface of the covering layer is etched by means of reactive ion etching method, or polished by chemical mechanical polishing method.
Claim 8
Dependent Claim
37 words
The method according to claim 1 , wherein said surface of the covering layer is wet-etched by making use of one selected from the group consisting of water, an acidic aqueous solution, and an alkaline aqueous solution.
Claim 9
Dependent Claim
23 words
The method according to claim 1 , wherein said covering film contains one selected from the group consisting of silicon, Al, and Ti.
Claim 10
Dependent Claim
35 words
The method according to claim 8 , wherein said covering film contains one selected from the group consisting of a water-soluble polymer containing silicon, a water-soluble polymer containing alumina and a water-soluble polymer containing titania.
Claim 11
Dependent Claim
20 words
The method according to claim 9 , wherein said water-soluble polymer containing silicon comprises polysilsesquioxane or a water-soluble spin-on glass.
Claim 12
Dependent Claim
14 words
The method according to claim 1 , which further comprises heating the covering layer.
Claim 13
Dependent Claim
37 words
The method according to claim 1 , wherein said surface of the covering layer is wet-etched by making use of one selected from the group consisting of water, an acidic aqueous solution, and an alkaline aqueous solution.
Claim 14
Independent Claim
165 words
A method of forming a pattern, comprising: forming a lower resist film over a surface of a substrate; forming an upper resist film on the lower resist film, said upper resist film being insoluble in water; patterning the upper resist film to form an upper resist pattern; forming a covering layer containing silicon or a metal on the upper resist pattern by a coating method using an aqueous solution of a water-soluble polymer containing silicon or a metal; wet-etching a surface of the covering layer until a surface of the upper resist pattern is exposed, thereby allowing the covering layer to selectively remain in an open portion of the upper resist pattern; and etching the upper resist pattern and the lower resist film to form a lower resist pattern, using the covering layer remaining in the open portion as a mask, wherein said forming of said covering layer and said wet-etching are continuously performed using an apparatus provided with a coater and a wet etcher.
Claim 15
Independent Claim
165 words
A method of forming a pattern, comprising: forming a lower resist film over a surface of a substrate; forming an upper resist film on the lower resist film, said upper resist film being insoluble in water; patterning the upper resist film to form an upper resist pattern; forming a covering layer containing silicon or a metal on the upper resist pattern by a coating method using an aqueous solution of a water-soluble polymer containing silicon or a metal; wet-etching a surface of the covering layer until a surface of the upper resist pattern is exposed, thereby allowing the covering layer to selectively remain in an open portion of the upper resist pattern; and etching the upper resist pattern and the lower resist film to form a lower resist pattern, using the covering layer remaining in the open portion as a mask, wherein said forming of said covering layer and said wet-etching are continuously performed using an apparatus provided with a coater and a wet etcher.
Claim 16
Independent Claim
144 words
A method of manufacturing a semiconductor device, comprising: forming a lower resist film over a surface of a substrate; forming an upper resist film on the lower resist film, said upper resist film being insoluble in water; patterning the upper resist film to form an upper resist pattern; forming a covering layer containing silicon or a metal on the upper resist pattern by a coating method using an aqueous solution of a water-soluble polymer containing silicon or a metal; etching or polishing a surface of the covering layer until a surface of the upper resist pattern is exposed, thereby allowing the covering layer to selectively remain in an open portion of the upper resist pattern; and etching the upper resist pattern and the lower resist film to form a lower resist pattern, using the covering layer remaining in the open portion as a mask.
Claim 17
Independent Claim
144 words
A method of manufacturing a semiconductor device, comprising: forming a lower resist film over a surface of a substrate; forming an upper resist film on the lower resist film, said upper resist film being insoluble in water; patterning the upper resist film to form an upper resist pattern; forming a covering layer containing silicon or a metal on the upper resist pattern by a coating method using an aqueous solution of a water-soluble polymer containing silicon or a metal; etching or polishing a surface of the covering layer until a surface of the upper resist pattern is exposed, thereby allowing the covering layer to selectively remain in an open portion of the upper resist pattern; and etching the upper resist pattern and the lower resist film to form a lower resist pattern, using the covering layer remaining in the open portion as a mask.
References Cited (Backward Citations)
JPH0313949A
Cited
US5066566A
Cited
US5403438A
Cited
JPH065629A
Cited
JPH07135140A
Cited
US5871383A
Cited
US5952243A
Cited
US5950106A
Cited
JPH11283910A
Cited
JP2000003029A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-11-09 | 2008-05-10 | 2008-11-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-11-09 | 2012-05-10 | 2012-11-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-11-09 | 2016-05-10 | 2016-11-09 | $7700.00 | Window Closed / Lapsed |