Patent US5029183A successfully refreshed from Google Patents.
Patent US5583737A successfully refreshed from Google Patents.
US5583737A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrostatic chuck usable in high density plasma
Assignee: Applied Materials Inc
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Filing: 1995-05-26
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Granted: 1996-12-10
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Expires: 2015-05-26
Abstract
Abstract An electrostatic chuck for holding a wafer in a plasma processing chamber, the chuck including a pedestal having a top surface, an internal manifold for carrying a cooling gas, and a first plurality of holes leading from the internal manifold toward said top surface; and a dielectric layer on the top surface of the pedestal. The dielectric layer has a top side and second plurality of holes, each of which is aligned with a different one of the holes of the first plurality of holes in the pedestal. The first and second holes form a plurality of passages extending from the internal manifold to the top side of the dielectric layer and through which the cooling gas is supplied to the backside of the wafer. Each of the first holes and the second hole aligned therewith form a different one of the plurality of passages. The passages are concentrated in regions of the dielectric layer that are in proximity to regions of higher leakage of cooling gas when the wafer is held against the electrostatic chuck by an electrostatic force.
Inventors
- 👤 Kenneth S. Collins
- 👤 John R. Trow
- 👤 Joshua Chiu-Wing Tsui
- 👤 Craig A. Roderick
- 👤 Nicolas J. Bright
- 👤 Jeffrey Marks
- 👤 Tetsuya Ishikawa
- 👤 Jian Ding
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 00:25
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/70; H10P72/72; H10P72/722
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
144 words
A method for dechucking a wafer from an electrostatic chuck at the completion of a plasma process during which process a plasma is generated in a plasma chamber by RF source power, the wafer is held on the chuck by a DC potential, and said electrostatic chuck supplies a cooling gas to a backside of said wafer, said dechucking method comprising: at the completion of said plasma process and while the RF source power is still on, turning off said cooling gas; changing said DC potential of said electrostatic chuck; slightly separating said wafer from said electrostatic chuck while said RF source plasma is still present; after slightly separating said wafer from said electrostatic chuck, turning off the RF source power; after turning off the RF source power, further separating said wafer from said electrostatic chuck; and removing said wafer from said plasma chamber.
Claim 2
Independent Claim
144 words
A method for dechucking a wafer from an electrostatic chuck at the completion of a plasma process during which process a plasma is generated in a plasma chamber by RF source power, the wafer is held on the chuck by a DC potential, and said electrostatic chuck supplies a cooling gas to a backside of said wafer, said dechucking method comprising: at the completion of said plasma process and while the RF source power is still on, turning off said cooling gas; changing said DC potential of said electrostatic chuck; slightly separating said wafer from said electrostatic chuck while said RF source plasma is still present; after slightly separating said wafer from said electrostatic chuck, turning off the RF source power; after turning off the RF source power, further separating said wafer from said electrostatic chuck; and removing said wafer from said plasma chamber.
Claim 3
Dependent Claim
33 words
The dechucking method of claim 1 further comprising the step of beginning a process of vacating the cooling gas from said electrostatic chuck prior to slightly separating said wafer from said electrostatic chuck.
Claim 4
Dependent Claim
35 words
The dechucking method of claim 1 wherein the step of slightly separating said wafer from said electrostatic chuck involves raising said wafer to a distance of no greater than 60 mils above said electrostatic chuck.
Claim 5
Dependent Claim
35 words
The dechucking method of claim 3 wherein the step of slightly separating said wafer from said electrostatic chuck involves raising said wafer to a distance of between 10 and 60 mils above said electrostatic chuck.
Claim 6
Dependent Claim
33 words
The dechucking method of claim 1 wherein the step of slightly separating said wafer from said electrostatic chuck comprises using lift pins that are located within said electrostatic chuck to raise said wafer.
Claim 7
Dependent Claim
16 words
The dechucking method of claim 5 wherein said lift pins are made of a non-conducting material.
Claim 8
Dependent Claim
16 words
The dechucking method of claim 6 wherein said lift pins are made of a ceramic material.
Claim 9
Dependent Claim
34 words
The dechucking method of claim 1 further comprising the step of waiting a preselected delay period after changing said DC potential of said electrostatic chuck and before slightly separating said wafer from electrostatic chuck.
Claim 10
Dependent Claim
16 words
The dechucking method of claim 8 wherein the preselected delay period is at least 5 seconds.
Claim 11
Dependent Claim
55 words
The dechucking method of claim 1 wherein said electrostatic chuck is biased at a first potential during plasma processing and wherein the step of changing said DC potential of said electrostatic chuck involves reducing said DC potential of said electrostatic chuck to a second potential that is lower than the magnitude of the first potential.
Claim 12
Dependent Claim
16 words
The dechucking method of claim 10 wherein said wherein said second potential is at ground potential.
Claim 13
Dependent Claim
18 words
The dechucking method of claim 10 wherein said first potential is a negative voltage relative to ground potential.
Claim 14
Dependent Claim
21 words
The dechucking method of claim 12 wherein said first potential is more negative than about -500 volts relative to ground potential.
Claim 15
Dependent Claim
47 words
The dechucking method of claim 13 wherein said electrostatic chuck is biased by RF bias power during plasma processing and further comprising the step of: at the completion of said plasma process and while the RF source power is still on, turning off said RF bias power.
References Cited (Backward Citations)
US3989301A
Cited
US4565601A
Cited
US4645218A
Cited
US4771730A
Cited
US5103367A
Cited
JPS6418236A
Cited
US4931135A
Cited
EP0328078A2
Cited
JPH01251735A
Cited
WO1990001374A1
Cited
US5151845A
Cited
US5117121A
Cited
EP0452222A1
Cited
US5179498A
Cited
EP0462563A1
Cited
US5255153A
Cited
US5250137A
Cited
US5221450A
Cited
US5055964A
Cited
JPH04253356A
Cited
US5310453A
Cited
US5350479A
Cited
US5460684A
Cited
US5382311A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-10 | 2000-06-10 | 2000-12-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-10 | 2004-06-10 | 2004-12-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-10 | 2008-06-10 | 2008-12-10 | $7700.00 | Window Closed / Lapsed |