Patent US5605867A successfully refreshed from Google Patents.
US5605867A
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Method of manufacturing insulating film of semiconductor device and apparatus for carrying out the same
Assignee: Kawasaki Microelectronics Inc
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Filing: 1993-03-15
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Granted: 1997-02-25
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Expires: 2013-03-15
Abstract
Abstract In a method of manufacturing an insulating film of a semiconductor device by a chemical vapor deposition, a surface of a semiconductor wafer is treated with an organic compound such as ethanol and methanol, and then the semiconductor wafer is transported into a reaction chamber and an insulating film is deposited on the thus treated surface of the semiconductor wafer by a chemical vapor deposition using a raw material such as organic silicon compound. By treating the surface of the semiconductor wafer with the organic compound prior to the deposition, the filling capability and planarization of the insulating film are improved. Further the insulating film thus formed is free from voids and clacks, and an amount of water contained in the insulating film is very small. The treatment of the surface of the semiconductor wafer can be performed simply by spin coating, spaying, vapor exposing or dipping, so that the throughput can be improved. Moreover, a gas of said organic compound for treating the surface of the semiconductor wafer may be mixed with raw material gas and reaction gas in the reaction chamber.
Inventors
- 👤 Nobuyoshi Sato
- 👤 Tomohiro Ohta
- 👤 Tadashi Nakano
- 👤 Hiroshi Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 05:17
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; C; C23; C23C; C23C16/00; C23C16/02; C23C16/0272; C23C16/22; C23C16/30; C23C16/40; C23C16/401; H10P14/00; H10P14/60; H10P14/65; H10P14/6502; H10P14/6508; H10P14/6512; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; H10P95/00; H10P95/06; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/077; H10W20/098; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6342; H10P14/6506; H10P14/66; H10P14/665; H10P14/668; H10P14/6681; H10P14/6682; H10P14/6684; H10P14/6686; H10P14/69215; H10P14/6924; Y; Y10; Y10S; Y10S148/00; Y10S148/017; Y10S438/00; Y10S438/974
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
95 words
A method of forming an insulating film on a surface of a substrate of a semiconductor device that has protrusions and depressions, comprising the steps of: (a) receiving a semiconductor substrate comprising a surface having hydroxyl containing groups thereon; (b) adsorbing molecules of at least one organic compound on the surface of said semiconductor substrate using a fluid comprising said at least one organic compound; (c) esterifying said hydroxyl containing groups; and (d) forming an insulating film on the thus treated surface of the semiconductor substrate by chemical vapor deposition using an organic silicon compound.
Claim 2
Independent Claim
95 words
A method of forming an insulating film on a surface of a substrate of a semiconductor device that has protrusions and depressions, comprising the steps of: (a) receiving a semiconductor substrate comprising a surface having hydroxyl containing groups thereon; (b) adsorbing molecules of at least one organic compound on the surface of said semiconductor substrate using a fluid comprising said at least one organic compound; (c) esterifying said hydroxyl containing groups; and (d) forming an insulating film on the thus treated surface of the semiconductor substrate by chemical vapor deposition using an organic silicon compound.
Claim 3
Dependent Claim
15 words
A method according to claim 1, wherein said organic silicon compound is an organic silane.
Claim 4
Dependent Claim
34 words
A method according to claim 2, wherein said organic silane is selected from the group consisting of tetraethoxysilane (TEOS), tetramethoxysilane (TMOS), octamethylcyclotetrasiloxane (OMCTS), hexamethyldisiloxane (ES), trimethylsilyl borate (SOB), diacetoxyditertiary-butoxysilane (DADBS) and trimethylsilyl phosphate (SOP).
Claim 5
Dependent Claim
43 words
A method according to claim 2, wherein said chemical vapor deposition in the step (c) is carried out by a thermal chemical vapor deposition using an oxygen gas as a reaction gas to form a thermal CVD oxide film as said insulating film.
Claim 6
Dependent Claim
28 words
A method according to claim 4, wherein an ozone gas is further added to said reaction gas to form an ozone-organic silane CVD film as said insulating film.
Claim 7
Dependent Claim
19 words
A method according to claim 4, wherein said thermal chemical vapor deposition is carried out under the atmospheric pressure.
Claim 8
Independent Claim
96 words
An apparatus for forming an insulating film on a surface of a substrate of a semiconductor device that has protrusions and depressions, comprising: (a) means for receiving a semiconductor substrate comprising a surface having hydroxyl containing groups thereon; (b) means for adsorbing molecules of at least one organic compound on the surface of said semiconductor substrate and esterifying said hydroxyl containing groups using a fluid comprising said at least one organic compound; and (c) means for forming an insulating film on the surface of the semiconductor substrate by chemical vapor deposition using an organic silicon compound.
Claim 9
Independent Claim
96 words
An apparatus for forming an insulating film on a surface of a substrate of a semiconductor device that has protrusions and depressions, comprising: (a) means for receiving a semiconductor substrate comprising a surface having hydroxyl containing groups thereon; (b) means for adsorbing molecules of at least one organic compound on the surface of said semiconductor substrate and esterifying said hydroxyl containing groups using a fluid comprising said at least one organic compound; and (c) means for forming an insulating film on the surface of the semiconductor substrate by chemical vapor deposition using an organic silicon compound.
Claim 10
Dependent Claim
15 words
An apparatus according to claim 7, wherein said means for adsorbing comprises a spin coater.
Claim 11
Dependent Claim
18 words
An apparatus according to claim 7, wherein said means for forming comprises a plurality of CVD reaction chambers.
Claim 12
Dependent Claim
18 words
An apparatus according to claim 7, wherein said means for forming comprises an atmospheric pressure CVD reaction chamber.
Claim 13
Dependent Claim
32 words
A method according to claim 1, wherein said fluid consists essentially of said at least one organic compound in a solvent selected from the group consisting of water and an organic solvent.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-02-25 | 2000-08-26 | 2001-02-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-02-25 | 2004-08-26 | 2005-02-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-02-25 | 2008-08-26 | 2009-02-25 | $7700.00 | Window Closed / Lapsed |