US6188564B1 — Method and apparatus for compensating non-uniform…

Claim 1

Independent Claim 97 words

A method for compensating non-uniform wafer processing in a plasma processing chamber having an electrostatic chuck for clamping a wafer, said electrostatic chuck having a plurality of layers, the method comprising: processing a first wafer on an electrostatic chuck in a first plasma processing chamber, said first wafer being exposed to a plasma in said first plasma processing chamber; determining non-uniformity characteristics of said processed first wafer; configuring one or more layers of said electrostatic chuck to substantially compensate for said non-uniformity characteristics on said first wafer; and processing a second wafer on said configured electrostatic chuck.

Claim 2

Independent Claim 97 words

A method for compensating non-uniform wafer processing in a plasma processing chamber having an electrostatic chuck for clamping a wafer, said electrostatic chuck having a plurality of layers, the method comprising: processing a first wafer on an electrostatic chuck in a first plasma processing chamber, said first wafer being exposed to a plasma in said first plasma processing chamber; determining non-uniformity characteristics of said processed first wafer; configuring one or more layers of said electrostatic chuck to substantially compensate for said non-uniformity characteristics on said first wafer; and processing a second wafer on said configured electrostatic chuck.

Claim 3

Dependent Claim 31 words

The method as recited in claim 1 , wherein said non-uniformity characteristics of said processed first wafer is determined by measuring said processed first wafer at a plurality of radial positions.

Claim 4

Dependent Claim 31 words

The method as recited in claim 2 , wherein said non-uniformity characteristics is generated by obtaining a uniformity curve showing a relationship between said processed first wafer and said radial positions.

Claim 5

Dependent Claim 27 words

The method as recited in claim 1 , wherein a specified layer among said one or more layers is partitioned into a plurality of electrically isolated portions.

Claim 6

Dependent Claim 46 words

The method as recited in claim 4 , wherein said specified layer is arranged in a shape of varying thickness characterized by varying impedance, wherein said varying impedance is capable of producing varying DC bias on said wafers such that said non-uniformity characteristics are substantially compensated.

Claim 7

Dependent Claim 40 words

The method as recited in claim 4 , wherein each of said partitioned portions are formed of different materials having different impedance characteristics capable of producing varying DC bias on said wafers such that said non-uniformity characteristics are substantially compensated.

Claim 8

Dependent Claim 18 words

The method as recited in claim 5 , wherein said partitioned portions are formed of a same material.

Claim 9

Dependent Claim 14 words

The method as recited in claim 5 , wherein said shape is a stair-step.

Claim 10

Dependent Claim 14 words

The method as recited in claim 5 , wherein said shape is a curve.

Claim 11

Dependent Claim 21 words

The method as recited in claim 4 , wherein said partitioned portions contain a plurality of materials, one material per partition.

Claim 12

Dependent Claim 36 words

The method as recited in claim 1 , wherein said electrostatic chuck has a base layer, wherein said one or more layers are disposed on said base layer along the outer periphery of said base layer.

Claim 13

Dependent Claim 24 words

The method as recited in claim 11 , wherein said one or more layers are disposed on said base layer to form a ring.

Claim 14

Dependent Claim 25 words

The method as recited in claim 1 , wherein said configured electrostatic chuck is placed in a second processing chamber for processing said second wafer.

Claim 15

Dependent Claim 88 words

The method as recited in claim 4 , wherein said plasma includes ions and wherein said operation of configuring one or more layers comprises: selecting said specified layer of said electrostatic chuck; determining impedance each of the partitioned portions of the selected layer for providing DC bias to said second wafer, said DC bias for attracting said ions in a substantially uniform manner to said first wafer; and configuring said selected layer to attract ions of a second plasma in a substantially uniform manner to said second wafer.

Claim 16

Dependent Claim 21 words

The method as recited in claim 14 , wherein said selected layer is configured in a shape to provide said impedance.

Claim 17

Dependent Claim 61 words

The method as recited in claim 4 , wherein said electrostatic chuck includes an electrode layer, wherein said electrode layer is partitioned into said plurality of portions, wherein said electrostatic chuck further includes a plurality of impedance elements coupled to said partitioned portions so as to provide varying DC bias on said wafers such that said non-uniformity characteristics are substantially compensated.

Claim 18

Dependent Claim 46 words

The method as recited in claim 1 , wherein said plasma processing chamber has an electrode disposed over said wafer, wherein said electrode includes a plurality of electrically partitioned portions that are configured to substantially configured to compensate for said non-uniformity characteristics on said first wafer.

Claim 19

Dependent Claim 25 words

The method as recited in claim 17 , wherein said electrode is arranged in a shape that is adapted to compensate for said non-uniformity characteristics.

Claim 20

Dependent Claim 28 words

The method as recited in claim 17 , wherein said electrode is arranged to have a plurality of materials that are adapted to compensate for said non-uniformity characteristics.

Claim 21

Dependent Claim 38 words

The method as recited in claim 17 , wherein a plurality of impedance elements are coupled to said partitioned portions so as to provide varying DC bias on said wafers such that said non-uniformity characteristics are substantially compensated.

Claim 22

Dependent Claim 17 words

The method as recited in claim 1 , wherein said one or layers include a dielectric layer.

Claim 23

Dependent Claim 18 words

The method as recited in claim 1 , wherein said one or more layers include an electrode layer.

Claim 24

Independent Claim 106 words

A method for compensating non-uniform plasma processing in a plasma processing chamber having an electrostatic chuck for clamping a wafer, said processing chamber having an electrode disposed over said wafer, the method comprising: processing a first wafer on said electrostatic chuck in a first plasma processing chamber, said first wafer being exposed to a plasma between said electrostatic chuck and an electrode in said first plasma processing chamber; determining non-uniformity characteristics of said processed first wafer; configuring said electrode into a plurality of electrically partitioned portions to substantially compensate for said non-uniformity characteristics on said first wafer; and processing a second wafer on said configured electrode.

Claim 25

Independent Claim 106 words

A method for compensating non-uniform plasma processing in a plasma processing chamber having an electrostatic chuck for clamping a wafer, said processing chamber having an electrode disposed over said wafer, the method comprising: processing a first wafer on said electrostatic chuck in a first plasma processing chamber, said first wafer being exposed to a plasma between said electrostatic chuck and an electrode in said first plasma processing chamber; determining non-uniformity characteristics of said processed first wafer; configuring said electrode into a plurality of electrically partitioned portions to substantially compensate for said non-uniformity characteristics on said first wafer; and processing a second wafer on said configured electrode.

Claim 26

Dependent Claim 31 words

The method as recited in claim 23 , wherein said non-uniformity characteristics of said processed first wafer is determined by measuring said processed first wafer at a plurality of radial positions.

Claim 27

Dependent Claim 31 words

The method as recited in claim 24 , wherein said non-uniformity characteristics are determined by generating a uniformity curve showing a relationship between said processed first wafer and said radial positions.

Claim 28

Dependent Claim 25 words

The method as recited in claim 23 , wherein said electrode is arranged in a shape that is adapted to compensate for said non-uniformity characteristics.

Claim 29

Dependent Claim 27 words

The method as recited in claim 23 , wherein said electrode arranged to have a plurality of materials that are adapted to compensate for said non-uniformity characteristics.

Claim 30

Dependent Claim 31 words

The method as recited in claim 23 , wherein said electrode is arranged to have a plurality of materials and in a shape such that said non-uniformity characteristics are substantially compensated.

Claim 31

Dependent Claim 73 words

An electrostatic chuck for clamping a wafer during plasma processing in a plasma processing chamber, comprising: a first layer having a varying first impedance adapted to produce a varying DC bias over said wafer such that ions in a plasma in said plasma processing chamber are attracted to said wafer in a substantially uniform manner over said wafer; and an electrode disposed under said first layer for transmitting RF power to said plasma.

Claim 32

Dependent Claim 73 words

An electrostatic chuck for clamping a wafer during plasma processing in a plasma processing chamber, comprising: a first layer having a varying first impedance adapted to produce a varying DC bias over said wafer such that ions in a plasma in said plasma processing chamber are attracted to said wafer in a substantially uniform manner over said wafer; and an electrode disposed under said first layer for transmitting RF power to said plasma.

Claim 33

Dependent Claim 34 words

The electrostatic chuck as recited in claim 29 , wherein said first layer is partitioned into a plurality of electrically isolated portions that are arranged in a shape adapted to provide said varying impedance.

Claim 34

Dependent Claim 29 words

The electrostatic chuck as recited in claim 30 , wherein said partitioned portions are arranged to have a plurality of materials that are adapted to provide said varying impedance.

Claim 35

Dependent Claim 43 words

The electrostatic chuck as recited in claim 29 , wherein said varying impedance is produced by configuring said first layer to have a plurality of materials and in a shape so as to attract said ions to said wafer in said uniform manner.

Claim 36

Dependent Claim 17 words

The electrostatic chuck as recited in claim 29 , wherein said first layer is a dielectric layer.

Claim 37

Dependent Claim 28 words

The electrostatic chuck as recited in claim 29 , wherein said electrostatic chuck includes one or more dielectric layers and wherein said first layer is an electrode layer.

Claim 38

Dependent Claim 23 words

The electrostatic chuck as recited in claim 29 , wherein said first layer includes at least one dielectric layer and an electrode layer.

Claim 39

Dependent Claim 58 words

The electrostatic chuck as recited in claim 34 , wherein said electrostatic chuck includes an electrode layer, wherein said electrode layer is partitioned into a plurality of portions, wherein a plurality of impedance elements is coupled to said partitioned portions so as to provide varying DC bias on said wafer such that said non-uniformity characteristics are substantially compensated.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2004-02-13	2004-08-14	2005-02-13	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2008-02-13	2008-08-14	2009-02-13	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2012-02-13	2012-08-14	2013-02-13	$7700.00	Window Closed / Lapsed

Method and apparatus for compensating non-uniform wafer processing in plasma processing chamber

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