US6531887B2
Expired / Lapsed
US
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One cell programmable switch using non-volatile cell
Assignee: Macronix International Co Ltd
•
Filing: 2001-06-01
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Granted: 2003-03-11
•
Expires: 2021-06-01
Abstract
Abstract A one transistor, non-volatile programmable switch is less complex and requires less area than prior art devices. The programmable switch is used in an integrated circuit and comprises a first node and a second node coupled with corresponding circuit elements in the integrated circuit. A single, non-volatile programmable transistor having a drain coupled to one of the first node and second node, a source coupled to the other of the first node and second node, gate coupled to an energizing conductor, the data storage structure constitute the programmable switch. The non-volatile programmable transistor consists of a mask programmable ROM cell, or a charge programmable device, in which the data storage structure comprises a floating gate or a nitride layer, or other charge trapping layer, between oxides or other insulators. A charge pump is coupled to the energizing conductor to produce a boosted voltage during logical operation of integrated circuit, so that voltage dissipation across the programmable switch is minimized or eliminated. In an embodiment, in which a charge programmable device is used, programmable circuitry is coupled to the first and second nodes, and to the energizing conductor to apply voltages sufficient to inject and remove charge from the charge storage structure for programming the charge programmable device. For integrated circuits in which voltages used for programming and erasing the non-volatile charge programmable device are high relative to the design rule for the circuit elements to be interconnected, a structure to withstand the high voltages is included.
Inventors
- 👤 Albert Sun
- 👤 Eric Sheu
- 👤 Ying-Che Lo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 12:19
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/02; H03K19/173; H03K19/177; H03K19/17748; H03K19/1776; G; G11; G11C; G11C16/00; G11C16/02; G11C16/04; G11C16/0466; G11C16/0475; H03K19/17736; H03K19/1778
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
125 words
A programmable switch for a configurable integrated circuit, comprising: a first node and a second node coupled with corresponding circuit elements in the integrated circuit; a non-volatile programmable device, having a drain coupled to one of the first node and the second node, a source coupled to the other of the first node and the second node, a control gate coupled to an energizing conductor, and a charge storage structure; and programming circuitry coupled to the first and second nodes, and to the energizing conductor, to apply voltages sufficient to inject and remove charge from the charge storage structure to program the charge programmable device, wherein the circuit element coupled with the first node includes a structure to withstand voltages applied by the programming circuitry.
Claim 2
Dependent Claim
125 words
A programmable switch for a configurable integrated circuit, comprising: a first node and a second node coupled with corresponding circuit elements in the integrated circuit; a non-volatile programmable device, having a drain coupled to one of the first node and the second node, a source coupled to the other of the first node and the second node, a control gate coupled to an energizing conductor, and a charge storage structure; and programming circuitry coupled to the first and second nodes, and to the energizing conductor, to apply voltages sufficient to inject and remove charge from the charge storage structure to program the charge programmable device, wherein the circuit element coupled with the first node includes a structure to withstand voltages applied by the programming circuitry.
Claim 3
Dependent Claim
41 words
The programmable switch of claim 1 , wherein the circuit element coupled with the first node comprises a transistor, having a gate coupled to the first node, and having a gate insulator adapted to withstand voltages applied by the programing circuitry.
Claim 4
Dependent Claim
48 words
The programmable switch of claim 1 , wherein the circuit element coupled with the first node comprises a transistor, having a gate coupled to the first node, and having a gate insulator comprising essentially a silicon dioxide layer thick enough to withstand voltages applied by the programming circuitry.
Claim 5
Dependent Claim
143 words
A programmable switch for a configurable integrated circuit, comprising: a first node and a second node coupled with corresponding circuit elements in the integrated circuit; a non-volatile programmable device, having a drain coupled to one of the first node and the second node, a source coupled to the other of the first node and the second node, a control gate coupled to an energizing conductor, and a charge storage structure; and programming circuitry coupled to the first and second nodes, and to the energizing conductor, to apply voltages sufficient to inject and remove charge from the charge storage structure to program the charge programmable device, wherein the programming circuitry includes logic to disconnect power to the circuit element coupled with one of the first and the second nodes while applying energy to remove charge from said charge storage element of said programmable device.
Claim 6
Dependent Claim
143 words
A programmable switch for a configurable integrated circuit, comprising: a first node and a second node coupled with corresponding circuit elements in the integrated circuit; a non-volatile programmable device, having a drain coupled to one of the first node and the second node, a source coupled to the other of the first node and the second node, a control gate coupled to an energizing conductor, and a charge storage structure; and programming circuitry coupled to the first and second nodes, and to the energizing conductor, to apply voltages sufficient to inject and remove charge from the charge storage structure to program the charge programmable device, wherein the programming circuitry includes logic to disconnect power to the circuit element coupled with one of the first and the second nodes while applying energy to remove charge from said charge storage element of said programmable device.
Claim 7
Dependent Claim
50 words
The programmable switch of claim 4 , wherein the programming circuitry includes logic to disconnect power to the circuit element coupled with the first node and to the circuit element coupled with the second node while applying energy to remove charge from said charge storage element of said programmable device.
Claim 8
Dependent Claim
143 words
A programmable switch for a configurable integrated circuit, comprising: a first node and a second node coupled with corresponding circuit elements in the integrated circuit; a non-volatile programmable device, having a drain coupled to one of the first node and the second node, a source coupled to the other of the first node and the second node, a control gate coupled to an energizing conductor, and a charge storage structure; and programming circuitry coupled to the first and second nodes, and to the energizing conductor, to apply voltages sufficient to inject and remove charge from the charge storage structure to program the charge programmable device, wherein the programming circuitry includes logic to disconnect power to the circuit element coupled with one of the first and the second nodes while applying energy to inject charge into said charge storage element of said programmable device.
Claim 9
Dependent Claim
143 words
A programmable switch for a configurable integrated circuit, comprising: a first node and a second node coupled with corresponding circuit elements in the integrated circuit; a non-volatile programmable device, having a drain coupled to one of the first node and the second node, a source coupled to the other of the first node and the second node, a control gate coupled to an energizing conductor, and a charge storage structure; and programming circuitry coupled to the first and second nodes, and to the energizing conductor, to apply voltages sufficient to inject and remove charge from the charge storage structure to program the charge programmable device, wherein the programming circuitry includes logic to disconnect power to the circuit element coupled with one of the first and the second nodes while applying energy to inject charge into said charge storage element of said programmable device.
Claim 10
Dependent Claim
50 words
The programmable switch of claim 6 , wherein the programming circuitry includes logic to disconnect power to the circuit element coupled with the first node and to the circuit element coupled with the second node while applying energy to inject charge into said charge storage element of said programmable device.
Claim 11
Dependent Claim
276 words
A programmable switch for a configurable integrated circuit, comprising: a first node and a second node coupled with corresponding circuit elements in the integrated circuit; a non-volatile, charge programmable device, having a drain coupled to one of the first node and the second node, a source coupled to the other of the first node and the second node, a control gate coupled to an energizing conductor, and a charge storage structure; and programming circuitry coupled to the first and second nodes, and to the energizing conductor, to apply voltages sufficient to inject and remove charge from the charge storage structure to program the charge programmable device, including: a first voltage conductor coupled to the first node and a second voltage conductor coupled to the second node, and logic to disconnect at least one of said first voltage conductor and said second voltage conductor during logical operation of the integrated circuit; logic to disconnect power to the circuit element coupled with one of the first node and the second node while applying energy to at least one of remove and inject charge from said charge storage element of said charge programmable non-volatile device; and a charge pump coupled to the energizing conductor, to produce a boosted voltage on said energizing conductor, the boosted voltage greater than the power potential on said circuit elements by at least a threshold voltage of said charge programmable non-volatile device, during logical operation of the integrated circuit; and wherein the circuit element coupled with the first node comprises a transistor, having a gate coupled to the first node, and having a gate insulator adapted to withstand voltages applied by the programming circuitry.
Claim 12
Dependent Claim
276 words
A programmable switch for a configurable integrated circuit, comprising: a first node and a second node coupled with corresponding circuit elements in the integrated circuit; a non-volatile, charge programmable device, having a drain coupled to one of the first node and the second node, a source coupled to the other of the first node and the second node, a control gate coupled to an energizing conductor, and a charge storage structure; and programming circuitry coupled to the first and second nodes, and to the energizing conductor, to apply voltages sufficient to inject and remove charge from the charge storage structure to program the charge programmable device, including: a first voltage conductor coupled to the first node and a second voltage conductor coupled to the second node, and logic to disconnect at least one of said first voltage conductor and said second voltage conductor during logical operation of the integrated circuit; logic to disconnect power to the circuit element coupled with one of the first node and the second node while applying energy to at least one of remove and inject charge from said charge storage element of said charge programmable non-volatile device; and a charge pump coupled to the energizing conductor, to produce a boosted voltage on said energizing conductor, the boosted voltage greater than the power potential on said circuit elements by at least a threshold voltage of said charge programmable non-volatile device, during logical operation of the integrated circuit; and wherein the circuit element coupled with the first node comprises a transistor, having a gate coupled to the first node, and having a gate insulator adapted to withstand voltages applied by the programming circuitry.
Claim 13
Dependent Claim
16 words
The programmable switch of claim 8 , wherein the charge storage structure comprises a floating gate.
Claim 14
Dependent Claim
19 words
The programmable switch of claim 8 , wherein the charge storage structure comprises a nitride layer embedded between insulators.
Claim 15
Dependent Claim
27 words
The programmable switch of claim 8 , wherein said gate insulator comprises essentially a silicon diokide layer thick enough to withstand voltages applied by the programming circuitry.
Claim 16
Dependent Claim
29 words
The programmable switch of claim 8 , wherein the programming circuitry comprises resources inducing Fowler-Nordhiem tunneling to remove charge from said charge storage element of said charge programmable device.
Claim 17
Dependent Claim
29 words
The programmable switch of claim 8 , wherein the programming circuitry comprises resources inducing Fowler-Nordhiem tunneling to inject charge into said charge storage element of said charge programmable device.
Claim 18
Dependent Claim
29 words
The programmable switch of claim 8 , wherein the programming circuitry comprises resources inducing hot electron tunneling to inject charge into said charge storage element of said charge,programmable device.
Claim 19
Dependent Claim
147 words
A integrated circuit comprising: an array of non-volatile charge programmable memory cells; configurable logic, in communication with said array; and a plurality of programmable switches for the configurable logic, at least one of the programmable switches in the plurality of programmable switches comprising: a first node and a second node coupled with corresponding circuit elements in the integrated circuit; a non-volatile charge programmable device, having a drain coupled to one of the first node and the second node, a source coupled to the other of the first node and the second node, a control gate coupled to an energizing conductor, and a charge storage structure; and programming circuitry coupled to the first and second nodes of said at least one programmable switch, and to the energizing conductor, to apply voltages sufficient to inject and remove charge from the charge storage structure to program the charge programmable device.
Claim 20
Dependent Claim
147 words
A integrated circuit comprising: an array of non-volatile charge programmable memory cells; configurable logic, in communication with said array; and a plurality of programmable switches for the configurable logic, at least one of the programmable switches in the plurality of programmable switches comprising: a first node and a second node coupled with corresponding circuit elements in the integrated circuit; a non-volatile charge programmable device, having a drain coupled to one of the first node and the second node, a source coupled to the other of the first node and the second node, a control gate coupled to an energizing conductor, and a charge storage structure; and programming circuitry coupled to the first and second nodes of said at least one programmable switch, and to the energizing conductor, to apply voltages sufficient to inject and remove charge from the charge storage structure to program the charge programmable device.
Claim 21
Dependent Claim
16 words
The integrated circuit of claim 15 , wherein the charge storage structure comprises a floating gate.
Claim 22
Dependent Claim
19 words
The integrated circuit of claim 15 , wherein the charge storage structure comprises a nitride layer embedded between insulators.
Claim 23
Dependent Claim
31 words
The integrated circuit of claim 15 , wherein the programming circuitry includes a first voltage conductor coupled to the first node and a second voltage conductor coupled to the second node.
Claim 24
Dependent Claim
27 words
The integrated circuit of claim 15 , wherein the circuit element coupled with the first node includes a structure to withstand voltages applied by the programming circuitry.
Claim 25
Dependent Claim
41 words
The integrated circuit of claim 15 , wherein the circuit element coupled with the first node comprises a transistor, having a gate coupled to the first node, and having a gate insulator adapted to withstand voltages applied by the programming circuitry.
Claim 26
Dependent Claim
48 words
The integrated circuit of claim 15 , wherein the circuit element coupled with the first node comprises a transistor, having a gate coupled to the first node, and having a gate insulator comprising essentially a silicon dioxide layer thick enough to withstand voltages applied by the programming circuitry.
Claim 27
Dependent Claim
29 words
The integrated circuit of claim 15 , wherein the programming circuitry comprises resources inducing Fowler-Nordhiem tunneling to remove charge from said charge storage element of said charge programmable device.
Claim 28
Dependent Claim
29 words
The integrated circuit of claim 15 , wherein the programming circuitry comprises resources inducing Fowler-Nordhiem tunneling to inject charge into said charge storage element of said charge programmable device.
Claim 29
Dependent Claim
30 words
The integrated circuit of claim 15 , wherein the programming circuitry comprises resources inducing hot electron tunneling to inject charge into said charge storage element of said charge programmable device.
Claim 30
Dependent Claim
46 words
The integrated circuit of claim 15 , wherein the programming circuitry includes logic to disconnect power to the circuit element coupled with one of the first and the second nodes while applying energy to remove charge from said charge storage element of said charge programmable device.
Claim 31
Dependent Claim
51 words
The integrated circuit of claim 15 , wherein the programming circuitry includes logic to disconnect power to the circuit element coupled with the first node and to the circuit element coupled with the second node while applying energy to remove charge from said charge storage element of said charge programmable device.
Claim 32
Dependent Claim
46 words
The integrated circuit of claim 15 , wherein the programming circuitry includes logic to disconnect power to the circuit element coupled with one of the first and the second nodes while applying energy to inject charge into said charge storage element of said charge programmable device.
Claim 33
Dependent Claim
51 words
The integrated circuit of claim 15 , wherein the programming circuitry includes logic to disconnect power to the circuit element coupled with the first node and to the circuit element coupled with the second node while applying energy to inject charge into said charge storage element of said charge programmable device.
Claim 34
Dependent Claim
28 words
The integrated circuit of claim 15 , including a charge pump coupled to the energizing conductor, to produce a boosted voltage during logical operation of the integrated circuit.
Claim 35
Dependent Claim
55 words
The integrated circuit of claim 15 , including a charge pump coupled to the energizing conductor, to produce a boosted voltage on said energizing conductor, the boosted voltage greater than the power potential on said circuit elements by at least a threshold voltage of said charge programmable device, during logical operation of the integrated circuit.
Claim 36
Dependent Claim
51 words
The integrated circuit of claim 15 , wherein the programming circuitry includes a first voltage conductor coupled to the first node and a second voltage conductor coupled to the second node, and logic to disconnect said first voltage conductor and said second voltage conductor during logical operation of the integrated circuit.
Claim 37
Dependent Claim
34 words
The integrated circuit of claim 15 , wherein the non-volatile charge programmable memory cells in said array have a common cell structure, and said non-volatile charge programmable device has essentially the same cell structure.
Claim 38
Dependent Claim
17 words
The integrated circuit of claim 15 , wherein said configurable logic comprises a hierarchy of functional blocks.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-03-10 | 2006-09-09 | 2007-03-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-03-10 | 2010-09-09 | 2011-03-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-03-10 | 2014-09-09 | 2015-03-11 | $7700.00 | Window Closed / Lapsed |