Patent US6703190B2 successfully refreshed from Google Patents.
US6703190B2
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Method for producing resist structures
Assignee: Polaris Innovations Ltd
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Filing: 2002-06-07
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Granted: 2004-03-09
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Expires: 2022-06-07
Abstract
Abstract A method for creating negative resist structures is described. In the method, a chemically fortified resist is applied to a substrate, dried, irradiated with light, x-ray, electron or ion beams, heated, developed using a aqueous-alkaline developer solution and siliconized from a liquid phase. The resist contains the following constituent: a polymer, whose polarity is modified by acidic action and which contains carboxylic acid anhydride groups, preferably in latent form; a compound which releases an acid as a result of thermal treatment; a photoreactive compound, from which a base is created during the irradiation with light, x-ray, electron or ion beams; a solvent; and optionally one or more additives.
Inventors
- 👤 Klaus Elian
- 👤 Stefan Hien
- 👤 Ernst-christian Richter
- 👤 Michael Sebald
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 22:03
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/0045; G03F7/039; G03F7/075; G03F7/0757; G03F7/0758; G03F7/26; G03F7/40; G03F7/405; Y; Y10; Y10S; Y10S430/00; Y10S430/1053; Y10S430/1055; Y10S430/106; Y10S430/111; Y10S430/114; Y10S430/122; Y10S430/124; Y10S430/127
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
138 words
A process for producing negative resist structures, which comprises the steps of: providing a substrate; applying a chemical amplification resist to the substrate, the chemical amplification resist containing: a polymer which changes polarity when exposed to an acid, and the polymer including carboxylic anhydride groups; a compound functioning as a thermoacid generator from which an acid is released when exposed to a thermal treatment; a photoreactive compound functioning as a photobase generator from which a base is formed upon exposure to one of light, X-rays, electron beams and ion beams; and a solvent; drying the chemical amplification resist; exposing the chemical amplification resist to one of light, X-rays, electron beams and ion beams; heating the chemical amplification resist; developing the chemical amplification resist with an aqueous-alkaline developer solution; and siliconizing the chemical amplification resist from a liquid phase.
Claim 2
Dependent Claim
138 words
A process for producing negative resist structures, which comprises the steps of: providing a substrate; applying a chemical amplification resist to the substrate, the chemical amplification resist containing: a polymer which changes polarity when exposed to an acid, and the polymer including carboxylic anhydride groups; a compound functioning as a thermoacid generator from which an acid is released when exposed to a thermal treatment; a photoreactive compound functioning as a photobase generator from which a base is formed upon exposure to one of light, X-rays, electron beams and ion beams; and a solvent; drying the chemical amplification resist; exposing the chemical amplification resist to one of light, X-rays, electron beams and ion beams; heating the chemical amplification resist; developing the chemical amplification resist with an aqueous-alkaline developer solution; and siliconizing the chemical amplification resist from a liquid phase.
Claim 3
Dependent Claim
31 words
The process according to claim 1 , which comprises forming the polymer with at least one acid-labile group selected from the group consisting of tert-alkyl esters, tert-butoxycarbonyloxy, acetal, tetrahydrofuranyl, and tetrahydropyranyl.
Claim 4
Dependent Claim
18 words
The process according to claim 1 , which comprises liberating a sulfonic acid from the thermo acid generator.
Claim 5
Dependent Claim
67 words
The process according to claim 1 , which comprises forming the thermoacid generator from at least one compound selected from the group consisting of a dialkyliodonium salt, a alkylaryliodonium salt, a diaryliodonium salt, a trialkylsulfonium salt of a sulfonate, a dialkylarylsulfonium salt of a sulfonate, a alkyldiarylsulfonium salt of a sulfonate, o-nitrobenzylsulfonate, a salt of a benzylthiolanium compound, a salt of a polyfluorinated butanesulfonate, and N-sulfonic esters.
Claim 6
Dependent Claim
16 words
The process according to claim 1 , which comprises forming an amine from the photobase generator.
Claim 7
Dependent Claim
51 words
The process according to claim 1 , which comprises forming the photobase generator from at least one compound selected from the group consisting of O-acyloxime, a benzyloxycarbonylamide derivative, a formamide derivative, a diarylmethanetrialkylammonium salt, o-nitrobenzyloxycarbonylcyclohexylamine, 2,6-dinitrobenzyloxycarbonylcyclohexylamine, a nifedipine derivative, and polymer-bound photobase generators based on one of the aforementioned base precursors.
Claim 8
Dependent Claim
31 words
The process according to claim 1 , which comprises adding an additive to the chemical amplification resist and selecting the additive from the group consisting of 9-anthracenemethanol acid and 9-hydroxy-9-fluorenecarboxylic acid.
Claim 9
Dependent Claim
28 words
The process according to claim 1 , which comprises irradiating the chemical amplification resist with UV light having a wavelength in a range of 1 to 400 nm.
Claim 10
Dependent Claim
19 words
The process according to claim 1 , which comprises performing the siliconizing step using a compound containing amino groups.
Claim 11
Dependent Claim
19 words
The process according to claim 1 , which comprises carrying out a thermal treatment before performing the siliconizing step.
Claim 12
Dependent Claim
23 words
The process according to claim 1 , which comprises performing the siliconizing step using a compound containing amino groups in an organic solvent.
Claim 13
Dependent Claim
19 words
The process according to claim 1 , which comprises carrying out a thermal treatment after performing the siliconizing step.
Claim 14
Dependent Claim
21 words
The process according to claim 1 , which comprises carrying out a thermal treatment before and after performing the siliconizing step.
Claim 15
Dependent Claim
19 words
The process according to claim 1 , which comprises forming the chemical amplification resist with at least one additive.
Claim 16
Dependent Claim
17 words
The process according to claim 1 , which comprises providing the carboxylic anhydride groups in latent form.
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