US7041604B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of patterning surfaces while providing greater control of recess anisotropy
Assignee: Canon Nanotechnologies Inc
•
Filing: 2004-09-21
•
Granted: 2006-05-09
•
Expires: 2024-09-21
Abstract
Abstract The present invention features a method of patterning a substrate that includes forming, on the substrate, a multi-layer film defining an etch rate interface having a plurality of first portions that having a first etch rate associated therewith. The multi-layer film includes a second portion having a second etch rate associated therewith. Adjacent first portions are separated by the second portion. A pattern is transferred onto the substrate that is defined, in part, by the junction. The difference between the first and second etch rates is selected to minimize bowing of recessed features formed in the pattern.
Inventors
- 👤 Michael N. Miller
- 👤 Nicholas A. Stacey
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 21:23
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/692; B; B29; B29C; B29C43/00; B29C43/003; B82; B82Y; B82Y10/00; B82Y40/00; G; G03; G03F; G03F7/00; G03F7/0002; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P50/286; H10P50/287; H10P50/693; H10P50/695; H10P50/73; B29C43/02; B29C43/021; B29C2043/023; B29C2043/025; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6339; H10P14/6342; H10P14/66; H10P14/662; H10P14/68; H10P14/683; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
90 words
A method of patterning a substrate, said method comprising: forming, on said substrate, a multi-layer film defining junction having a plurality of first portions each of which has a first etch rate associated therewith and a second portion having a second etch rate associated therewith, with adjacent first portions being separated by said second portion; and transferring a pattern defined, in part, by said junction into said substrate, with a difference between said first and second etch rates being selected to minimize bowing of recessed features formed in said pattern.
Claim 2
Independent Claim
90 words
A method of patterning a substrate, said method comprising: forming, on said substrate, a multi-layer film defining junction having a plurality of first portions each of which has a first etch rate associated therewith and a second portion having a second etch rate associated therewith, with adjacent first portions being separated by said second portion; and transferring a pattern defined, in part, by said junction into said substrate, with a difference between said first and second etch rates being selected to minimize bowing of recessed features formed in said pattern.
Claim 3
Dependent Claim
19 words
The method as recited in claim 1 further including cooling said substrate to a predetermined temperature below ambient temperature.
Claim 4
Dependent Claim
17 words
The method as recited in claim 1 wherein transferring further includes removing said junction employing reducing chemistries.
Claim 5
Dependent Claim
23 words
The method as recited in claim 1 wherein transferring further includes sequentially removing said first and second portions uniformly over a volume thereof.
Claim 6
Dependent Claim
57 words
The method as recited in claim 1 wherein forming further includes forming said plurality of first portions with a first quantity of silicon and forming said second portion with a second quantity of silicon, differing from said first portion and defining a difference between said first etch rate and second etch rate for a given etch chemistry.
Claim 7
Dependent Claim
45 words
The method as recited in claim 1 wherein forming further includes forming said plurality of first portions with a quantity of silicon in a range of 2–6% by weight and forming said second portion with a second quantity of silicon at least 10% by weight.
Claim 8
Dependent Claim
51 words
The method as recited in claim 1 wherein forming further includes depositing a first layer upon said substrate comprising isobornyl acrylate, n-hexyl acrylate, ethylene glycol diacrylate, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, acryloxymethylpentamethyldisiloxane and a surfactant, and depositing upon said first layer a second layer comprising a hydroxyl-functional polysiloxane, hexamethoxymethylmelamine, toluenesulfonic acid and methyl amyl ketone.
Claim 9
Dependent Claim
21 words
The method as recited in claim 7 wherein depositing upon said first layer further includes providing said second layer with gamma-glycidoxypropyltrimethoxysilane.
Claim 10
Dependent Claim
54 words
The method as recited in claim 1 wherein forming further includes forming said multi-layer film from a first layer deposited upon said substrate using a deposition process selected from a set of deposition processes consisting essentially of chemical vapor deposition, plasma enhanced chemical vapor deposition, spin coating, atomic layer deposition, and drop dispense imprinting.
Claim 11
Dependent Claim
55 words
The method as recited in claim 9 wherein forming further includes forming said multi-layer film from a second layer deposited upon said first layer using a deposition process selected from a set of deposition processes consisting essentially of chemical vapor deposition, plasma enhanced chemical vapor deposition, spin coating, atomic layer deposition, and drop dispense imprinting.
Claim 12
Dependent Claim
31 words
The method as recited in claim 9 wherein forming further includes patterning said first layer employing a process selected from a set of processes including spin-coat imprinting and electron beam patterning.
Claim 13
Dependent Claim
24 words
The method as recited in claim 1 wherein said substrate includes a featured region, with said multi-layer film being disposed upon said featured region.
Claim 14
Dependent Claim
78 words
The method as recited in claim 1 wherein forming further includes forming said multi-layer film with a crown surface and a first film deposited upon said substrate with a plurality of projections, each of which has an apex surface associated therewith, said crown surface being spaced apart from said apex surface, with a variation in a distance between said apex surface of any one of said plurality of projections and said crown surface being within a predetermined range.
Claim 15
Dependent Claim
83 words
The method as recited in claim 1 wherein forming further includes forming said multi-layer film with a crown surface and a first film deposited upon said substrate with a plurality of projections extending from a nadir terminating in an apex surface defining a height therebetween, said crown surface being spaced apart from said apex surface, with a variation in a distance between said apex surface of any one of said plurality of projections and said crown surface being less that ½ said height.
Claim 16
Independent Claim
65 words
A method of patterning a substrate, said method comprising: forming, on said substrate, a multi-layer film defining junction having a plurality of first portions with a quantity of silicon in a range of 2–6% by weight and a second portion having a second quantity of silicon with at least 10% by weight; and transferring a pattern into said substrate defined, in part, by said junction.
Claim 17
Independent Claim
65 words
A method of patterning a substrate, said method comprising: forming, on said substrate, a multi-layer film defining junction having a plurality of first portions with a quantity of silicon in a range of 2–6% by weight and a second portion having a second quantity of silicon with at least 10% by weight; and transferring a pattern into said substrate defined, in part, by said junction.
Claim 18
Dependent Claim
19 words
The method as recited in claim 15 further including cooling said substrate to a predetermined temperature below ambient temperature.
Claim 19
Dependent Claim
17 words
The method as recited in claim 15 wherein transferring further includes removing said junction employing reducing chemistries.
Claim 20
Dependent Claim
23 words
The method as recited in claim 15 wherein transferring further includes sequentially removing said first and second portions uniformly over a volume thereof.
Claim 21
Dependent Claim
41 words
The method as recited in claim 15 wherein forming further includes providing said plurality of first portions with a etch rate and said second portion with a second etch rate, differing from said first etch rate for a given etch chemistry.
Claim 22
Dependent Claim
51 words
The method as recited in claim 15 wherein forming further includes depositing a first layer upon said substrate comprising isobornyl acrylate, n-hexyl acrylate, ethylene glycol diacrylate, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, acryloxymethylpentamethyldisiloxane and a surfactant, and depositing upon said first layer a second layer comprising a hydroxyl-functional polysiloxane, hexamethoxymethylmelamine, toluenesulfonic acid and methyl amyl ketone.
Claim 23
Dependent Claim
21 words
The method as recited in claim 20 wherein depositing upon said first layer further includes providing said second layer with gamma-glycidoxypropyltrimethoxysilane.
Claim 24
Dependent Claim
54 words
The method as recited in claim 15 wherein forming further includes forming said multi-layer film from a first layer deposited upon said substrate using a deposition process selected from a set of deposition processes consisting essentially of chemical vapor deposition, plasma enhanced chemical vapor deposition, spin coating, atomic layer deposition, and drop dispense imprinting.
Claim 25
Dependent Claim
55 words
The method as recited in claim 22 wherein forming further includes forming said multi-layer film from a second layer deposited upon said first layer using a deposition process selected from a set of deposition processes consisting essentially of chemical vapor deposition, plasma enhanced chemical vapor deposition, spin coating, atomic layer deposition, and drop dispense imprinting.
Claim 26
Dependent Claim
31 words
The method as recited in claim 22 wherein forming further includes patterning said first layer employing a process selected from a set of processes including spin-coating imprinting and electron beam patterning.
Claim 27
Dependent Claim
24 words
The method as recited in claim 15 wherein said substrate includes a featured region, with said multi-layer film being disposed upon said featured region.
Claim 28
Dependent Claim
78 words
The method as recited in claim 15 wherein forming further includes forming said multi-layer film with a crown surface and a first film deposited upon said substrate with a plurality of projections, each of which has an apex surface associated therewith, said crown surface being spaced apart from said apex surface, with a variation in a distance between said apex surface of any one of said plurality of projections and said crown surface being within a predetermined range.
Claim 29
Dependent Claim
83 words
The method as recited in claim 15 wherein forming further includes forming said multi-layer film with a crown surface and a first film deposited upon said substrate with a plurality of projections extending from a nadir terminating in an apex surface defining a height therebetween, said crown surface being spaced apart from said apex surface, with a variation in a distance between said apex surface of any one of said plurality of projections and said crown surface being less that ½ said height.
Claim 30
Independent Claim
108 words
A method of patterning a substrate, said method comprising: forming, on said substrate, a multi-layer film defining junction having a plurality of first portions with a first quantity of silicon providing a first etch rate associated therewith and a second portion with a second quantity of silicon providing a second etch rate associated therewith, with adjacent first portions being separated by said second portion; cooling said substrate to a predetermined temperature; and transferring, after cooling, a pattern into said substrate defined, in part, by said junction, with a difference between said first and second etch rates being selected to minimize bowing of recessed features formed in said pattern.
Claim 31
Independent Claim
108 words
A method of patterning a substrate, said method comprising: forming, on said substrate, a multi-layer film defining junction having a plurality of first portions with a first quantity of silicon providing a first etch rate associated therewith and a second portion with a second quantity of silicon providing a second etch rate associated therewith, with adjacent first portions being separated by said second portion; cooling said substrate to a predetermined temperature; and transferring, after cooling, a pattern into said substrate defined, in part, by said junction, with a difference between said first and second etch rates being selected to minimize bowing of recessed features formed in said pattern.
Claim 32
Dependent Claim
48 words
The method as recited in claim 28 wherein forming further includes forming said plurality of first portions with said first quantity of silicon being in a range of 2–6% by eight and forming said second portion with said second quantity of silicon being at least 10% by weight.
Claim 33
Dependent Claim
50 words
The method as recited in claim 29 wherein forming further includes depositing a first layer upon said substrate comprising isobornyl acrylate, n-hexyl acrylate, ethylene glycol diacrylate, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, acryloxymethylpentamethyldisiloxane and a surfactant, and depositing upon said first layer a second layer comprising hydroxyl-functional polysiloxane, hexamethoxymethylmelamine, toluenesulfonic acid and methyl amyl ketone.
Claim 34
Dependent Claim
21 words
The method as recited in claim 30 wherein depositing upon said first layer further includes providing said second layer with gamma-glycidoxypropyltrimethoxysilane.
Claim 35
Dependent Claim
17 words
The method as recited in claim 28 wherein transferring further includes removing said junction employing reducing chemistries.
Claim 36
Dependent Claim
24 words
The method as recited in claim 28 wherein said substrate includes a featured region, with said multi-layer film being disposed upon said featured region.
Claim 37
Dependent Claim
78 words
The method as recited in claim 28 wherein forming further includes forming said multi-layer film with a crown surface and a first film deposited upon said substrate with a plurality of projections, each of which has an apex surface associated therewith, said crown surface being spaced apart from said apex surface, with a variation in a distance between said apex surface of any one of said plurality of projections and said crown surface being within a predetermined range.
Claim 38
Dependent Claim
83 words
The method as recited in claim 28 wherein forming further includes forming said multi-layer film with a crown surface and a first film deposited upon said substrate with a plurality of projections extending from a nadir terminating in an apex surface defining a height therebetween, said crown surface being spaced apart from said apex surface, with a variation in a distance between said apex surface of any one of said plurality of projections and said crown surface being less that ½ said height.
References Cited (Backward Citations)
US4426247A
Cited
US4507331A
Cited
US4512848A
Cited
US4657845A
Cited
US4692205A
Cited
US4959252A
Cited
US4931351A
Cited
US4731155A
Cited
US4976818A
Cited
US5028366A
Cited
JPH0224848A
Cited
JPH0292603A
Cited
US5071694A
Cited
US5173393A
Cited
US5234793A
Cited
US5198326A
Cited
US5240550A
Cited
US5314772A
Cited
US5545367A
Cited
US5601641A
Cited
US5425848A
Cited
US5480047A
Cited
US6776094B1
Cited
US5700626A
Cited
US5434107A
Cited
US5849209A
Cited
US5743998A
Cited
US5849222A
Cited
US5772905A
Cited
US20040137734A1
Cited
US6309580B1
Cited
US6518189B1
Cited
US6809356B2
Cited
US6828244B2
Cited
US5888650A
Cited
US6046056A
Cited
US6074827A
Cited
US6426288B1
Cited
US6033977A
Cited
WO1999005724A1
Cited
US6646662B1
Cited
US20020167117A1
Cited
US20030034329A1
Cited
US5907782A
Cited
US6096655A
Cited
US20020042027A1
Cited
US6713238B1
Cited
WO2000021689A1
Cited
US20040118809A1
Cited
US6420251B1
Cited
US6334960B1
Cited
US6719915B2
Cited
US6767983B1
Cited
US6517995B1
Cited
US6329256B1
Cited
US6703190B2
Cited
WO2001047003A2
Cited
US6391217B2
Cited
US6482742B1
Cited
US20040046288A1
Cited
WO2002007199A1
Cited
US20020132482A1
Cited
US20020177319A1
Cited
US20040131718A1
Cited
US20040036201A1
Cited
US6326627B1
Cited
US6777170B1
Cited
US6730256B1
Cited
US6455411B1
Cited
US6814879B2
Cited
US6696220B2
Cited
US6580172B2
Cited
WO2003010289A2
Cited
US20040197843A1
Cited
US20030080471A1
Cited
US20030080472A1
Cited
US20040156108A1
Cited
US6716767B2
Cited
US6737202B2
Cited
US20040029041A1
Cited
WO2003079416A1
Cited
US6743713B2
Cited
WO2003099536A1
Cited
US20040008334A1
Cited
US20040009673A1
Cited
US20040007799A1
Cited
US20040124566A1
Cited
US20040022888A1
Cited
US20040021254A1
Cited
US20040021866A1
Cited
US20040110856A1
Cited
US6770852B1
Cited
US20040188381A1
Cited
US20040192041A1
Cited
US20040211754A1
Cited
WO2004114016A2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2009-05-08 | 2009-11-07 | 2010-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2013-05-08 | 2013-11-07 | 2014-05-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2017-05-08 | 2017-11-07 | 2018-05-09 | $7700.00 | Window Closed / Lapsed |