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Compositions for dark-field polymerization and method of using the same for imprint lithography processes

Assignee: The University of Texas System
•
Filing: 2002-12-12
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Granted: 2008-04-29
•
Expires: 2022-12-12
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Abstract

Abstract A composition is provided and a method of using the same to form a pattern on a substrate using imprint lithography employing dark-field polymerization is disclosed. The composition includes a polymerizable bisvinylether and an initiator that produces an acid in response to radiation.

Inventors

  • 👤 C. Grant Willson
  • 👤 Nicholas A. Stacey

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 09:43
CPC Classifications
B; B82; B82Y; B82Y10/00; G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; G03F7/0757; B82Y40/00; G03F7/0002; G03F7/0045

Claims Analysis

Total Claims: 21
Claim 1
Independent Claim 84 words
A composition polymerizable in response to radiation being incident thereupon, said composition comprising: only one silane bis vinyl ether, wherein the silane bis vinyl ether is bis(divinyloxymethyl)tetramethyldisiloxane; an initiator component responsive to said radiation to produce an acid in response thereto; and a base in an amount that reduces unwanted acid production, wherein said bis(divinyloxymethyl)tetramethyldisiloxane is reactive to said acid and polymerizes in response thereto, and wherein the composition is operable to form a pattern on a substrate using imprint lithography employing dark-field polymerization.
Claim 2
Dependent Claim 84 words
A composition polymerizable in response to radiation being incident thereupon, said composition comprising: only one silane bis vinyl ether, wherein the silane bis vinyl ether is bis(divinyloxymethyl)tetramethyldisiloxane; an initiator component responsive to said radiation to produce an acid in response thereto; and a base in an amount that reduces unwanted acid production, wherein said bis(divinyloxymethyl)tetramethyldisiloxane is reactive to said acid and polymerizes in response thereto, and wherein the composition is operable to form a pattern on a substrate using imprint lithography employing dark-field polymerization.
Claim 3
Dependent Claim 65 words
A composition polymerizable in response to radiation being incident thereupon, said composition comprising: only one silane bis vinyl ether, wherein the silane bis vinyl ether is bis(divinyloxymethyl)tetramethyldisiloxane; an initiator component including triphenylsulphonium salts or diphenyliodonium salts; and a base in an amount that reduces unwanted acid production, wherein the composition is operable to form a pattern on a substrate using imprint lithography employing dark-field polymerization.
Claim 4
Dependent Claim 65 words
A composition polymerizable in response to radiation being incident thereupon, said composition comprising: only one silane bis vinyl ether, wherein the silane bis vinyl ether is bis(divinyloxymethyl)tetramethyldisiloxane; an initiator component including triphenylsulphonium salts or diphenyliodonium salts; and a base in an amount that reduces unwanted acid production, wherein the composition is operable to form a pattern on a substrate using imprint lithography employing dark-field polymerization.
Claim 5
Dependent Claim 73 words
A composition polymerizable in response to radiation being incident thereupon, said composition comprising: only one silane bis vinyl ether, wherein the silane bis vinyl ether is bis(vinyloxymethyl)dimethysilane; and an initiator component responsive to said radiation to produce an acid in response thereto, wherein said bis(vinyloxymethyl)dimethysilane is reactive to said acid and polymerizes in response thereto, wherein the composition is operable to form a pattern on a substrate using imprint lithography employing dark-field polymerization.
Claim 6
Dependent Claim 73 words
A composition polymerizable in response to radiation being incident thereupon, said composition comprising: only one silane bis vinyl ether, wherein the silane bis vinyl ether is bis(vinyloxymethyl)dimethysilane; and an initiator component responsive to said radiation to produce an acid in response thereto, wherein said bis(vinyloxymethyl)dimethysilane is reactive to said acid and polymerizes in response thereto, wherein the composition is operable to form a pattern on a substrate using imprint lithography employing dark-field polymerization.
Claim 7
Dependent Claim 39 words
The composition as recited in claim 1 wherein said initiator component includes triphenylsulphonium salts or diphenyliodonium salts, the salts having a counter ion selected from the group consisting of antimony hexafluoride; phosphorus hexafluoride; boron tetrafluoride; and tris (trifluoromethylsulphonyl) methide.
Claim 8
Dependent Claim 12 words
The composition as recited in claim 3 further including an acrylate monomer.
Claim 9
Dependent Claim 30 words
The composition as recited in claim 3 wherein said bis(vinyloxymethyl)dimethysilane is approximately 98% of said composition by weight and said initiator component is approximately 2% of said composition by weight.
Claim 10
Dependent Claim 23 words
The composition as recited in claim 3 further including an acrylate monomer, and a base in an amount that reduces unwanted acid production.
Claim 11
Dependent Claim 39 words
The composition as recited in claim 3 wherein the initiator component includes a diaryliodonium salt, and the composition further includes a mixture of an ethylene glycol divinyl ether and a base in an amount that reduces unwanted acid production.
Claim 12
Dependent Claim 24 words
The composition as recited in claim 3 wherein said initiator component includes a diaryliodonium salt and the composition further includes ethylene glycol divinyl ether.
Claim 13
Dependent Claim 14 words
A polymerized product of the composition of claim 3 obtained by exposure to radiation.
Claim 14
Dependent Claim 55 words
A composition polymerizable in response to radiation being incident thereon, said composition comprising: only one silane bis vinyl ether, wherein the silane bis vinyl ether is bis(vinyloxymethyl)dimethylsilane; and an initiator component including triphenylsulphonium salts or diphenyliodonium salts, wherein the composition is operable to form a pattern on a substrate using imprint lithography employing dark-field polymerization.
Claim 15
Dependent Claim 55 words
A composition polymerizable in response to radiation being incident thereon, said composition comprising: only one silane bis vinyl ether, wherein the silane bis vinyl ether is bis(vinyloxymethyl)dimethylsilane; and an initiator component including triphenylsulphonium salts or diphenyliodonium salts, wherein the composition is operable to form a pattern on a substrate using imprint lithography employing dark-field polymerization.
Claim 16
Dependent Claim 15 words
The composition as recited in claim 11 wherein said composition further includes an acrylate monomer.
Claim 17
Dependent Claim 22 words
The composition as recited in claim 12 wherein said composition further includes a base in an amount that reduces unwanted acid production.
Claim 18
Dependent Claim 33 words
The composition as recited in claim 11 wherein said silane bis vinyl component is approximately 98% of said composition by weight and said initiator component is approximately 2% of said composition by weight.
Claim 19
Dependent Claim 39 words
The composition as recited in claim 11 wherein said initiator component includes a diphenyliodonium salt, and the composition further includes a mixture of an ethylene glycol divinyl ether and a base in an amount that reduces unwanted acid production.
Claim 20
Dependent Claim 78 words
A composition polymerization in response to radiation being incident thereupon, said composition comprising: exactly two silane bis vinyl ethers, wherein the two silane bis vinyl ethers are bis(vinyloxymethyl)dimethysilane and bis(divinyloxymethyl)tetramethyldisiloxane; and an initiator component responsive to said radiation to produce an acid in response thereto, wherein said bis vinyl ethers are reactive to said acid and polymerize in response thereto, wherein the composition is operable to form a pattern on a substrate using imprint lithography employing dark-field polymerization.
Claim 21
Dependent Claim 78 words
A composition polymerization in response to radiation being incident thereupon, said composition comprising: exactly two silane bis vinyl ethers, wherein the two silane bis vinyl ethers are bis(vinyloxymethyl)dimethysilane and bis(divinyloxymethyl)tetramethyldisiloxane; and an initiator component responsive to said radiation to produce an acid in response thereto, wherein said bis vinyl ethers are reactive to said acid and polymerize in response thereto, wherein the composition is operable to form a pattern on a substrate using imprint lithography employing dark-field polymerization.

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2011-04-29 2011-10-29 2012-04-29 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2015-04-29 2015-10-29 2016-04-29 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2019-04-29 2019-10-29 2020-04-29 $7700.00 Window Closed / Lapsed

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