Inductive plasma reactor

Claim 5

The method of claim 2, wherein the conductive collecting vane forms a second plurality of closely spaced openings offset from the first plurality of closely spaced openings and the step of inducing a flow further comprises the step of causing the activated neutral species to flow through the second plurality of closely spaced openings.

Claim 12

The method of claim 6, wherein the step of exposing the substrate to the activated neutral species further comprises the step of dispensing the activated neutral species through the second plurality of openings substantially uniformly across the surface of the substrate.

Claim 15

A plasma reactor for processing a substrate comprising: a plasma chamber for producing a plasma having charged particles and an activated neutral species; a processing chamber containing the substrate; and a charged particle filter disposed between the plasma chamber and the processing chamber, the filter having a first filter member forming a plurality of openings for receiving the activated neutral species from the plasma chamber and a second filter member forming a plurality of openings for providing the activated neutral species to the processing chamber offset from the plurality of openings in the first filter member; wherein the filter forms a flow path from the plasma chamber to the processing chamber such that the activated neutral species flows from the plasma chamber to the substrate for processing, and each respective opening over the substrate in at least one of the filter members is spaced from adjacent openings by a distance less than the distance across the respective opening.

Claim 16

A plasma reactor for processing a substrate comprising: a plasma chamber for producing a plasma having charged particles and an activated neutral species; a processing chamber containing the substrate; and a charged particle filter disposed between the plasma chamber and the processing chamber, the filter having a first filter member forming a plurality of openings for receiving the activated neutral species from the plasma chamber and a second filter member forming a plurality of openings for providing the activated neutral species to the processing chamber offset from the plurality of openings in the first filter member; wherein the filter forms a flow path from the plasma chamber to the processing chamber such that the activated neutral species flows from the plasma chamber to the substrate for processing, and each respective opening over the substrate in at least one of the filter members is spaced from adjacent openings by a distance less than the distance across the respective opening.

Claim 17

The plasma reactor of claim 9, wherein the second filter member is closely spaced to the first filter member forming a small gap between the first and second filter members for trapping and filtering the charged particles.

Claim 18

The plasma reactor of claim 9, wherein the second filter member forms a surface substantially parallel to the substrate.

Claim 19

The plasma reactor of claim 9, wherein the openings in the second filter member are offset from the openings in the first filter member such that ultraviolet radiation is substantially prevented from radiating from the plasma chamber to the processing chamber through the filter.

Claim 20

The plasma reactor of claim 9, wherein the flow path is nonlinear.

Claim 21

The plasma reactor of claim 9, wherein a potential of the plasma relative to the filter is maintained at a level such that a plasma discharge within the filter is substantially prevented.

Claim 22

The plasma reactor of claim 9, wherein said first and second filter members are spaced apart by an insulating material.

Claim 23

The plasma reactor of claim 9, wherein the openings in the second filter member are offset from the openings in the first filter member; and the distance between the first and second filter members and the size of the openings in the first and second filter members are selected such that substantially all paths through the filter are non-linear.

Claim 24

The plasma reactor of claim 9, wherein each of the openings in the first filter member has a diameter and is spaced from adjacent openings in the first filter member by a distance less than the diameter.

Claim 25

The plasma reactor of claim 9, wherein each of the openings in the second filter member has a diameter and is spaced from adjacent openings in the second filter member by a distance less than the diameter.

Claim 26

The plasma reactor of claim 17, wherein each respective opening in the second filter member has a diameter and is spaced from adjacent openings in the second filter member by a distance less than the diameter of the respective opening in the second filter member.

Claim 27

The plasma reactor of claim 9, wherein the first and second filter members are spaced apart by a distance, and the first filter member has a thickness greater than the distance between the first and second filter members.

Claim 28

The plasma reactor of claim 20, wherein the second filter member has a thickness greater than the distance between the first and second filter members.

Claim 29

The plasma reactor of claim 17, wherein the first and second filter members are spaced apart by a short distance, and the diameter of each of the openings in the second filter member is greater than the short distance.

Claim 30

The plasma reactor of claim 9, further comprising a power source coupled to the filter such that an electric field is induced between the first and second filter members to enhance the filtration of the charged particles from the flow path.

Claim 31

The plasma reactor of claim 10, further comprising a power source for inducing an electric field across the small gap such that the charged particles are deflected from the flow path.

Claim 32

The plasma reactor of claim 19, further comprising a power source coupled to the filter such that an electric field is induced between the first and second filter members to enhance the filtration of the charged particles from the flow path.

Claim 33

The plasma reactor of claim 20, further comprising a power source coupled to the filter such that an electric field is induced between the first and second filter members to enhance the filtration of the charged particles from the flow path.

Claim 34

The plasma reactor of claim 9, further comprising a third filter member disposed between the first filter member and the second filter member, the third filter member forming a plurality of openings such that the activated neutral species may pass through the third filter member.

Claim 35

The plasma reactor of claim 27, wherein the third filter member comprises a conductive material for filtering charged particles from the flow path.

Claim 36

The plasma reactor of claim 27, further comprising a power source coupled to the filter such that an electric field is induced between the first and third filter members to enhance the filtration of the charged particles from the flow path.

Claim 37

The plasma reactor of claim 27, further comprising a power source coupled to the filter such that an electric field is induced between the second and third filter members to enhance the filtration of the charged particles from the flow path.

Claim 38

The plasma reactor of claim 29, wherein a second electric field is induced between the third and second filter members to enhance the filtration of the charged particles from the flow path.

Claim 39

A plasma reactor for processing a substrate comprising: a plasma chamber for producing a plasma having charged particles and an activated neutral species; a processing chamber containing the substrate; and a filter disposed between the plasma chamber and the processing chamber, the filter comprising a plurality of adjacent grids including a first grid forming an array of closely spaced openings and a second grid forming an array of closely spaced openings offset from the array of closely spaced openings in the first grid; wherein a flow path is defined between the plasma chamber and the processing chamber and the first and second grids comprise a conductive material for filtering charged particles from the flow path.

Claim 40

A plasma reactor for processing a substrate comprising: a plasma chamber for producing a plasma having charged particles and an activated neutral species; a processing chamber containing the substrate; and a filter disposed between the plasma chamber and the processing chamber, the filter comprising a plurality of adjacent grids including a first grid forming an array of closely spaced openings and a second grid forming an array of closely spaced openings offset from the array of closely spaced openings in the first grid; wherein a flow path is defined between the plasma chamber and the processing chamber and the first and second grids comprise a conductive material for filtering charged particles from the flow path.

Claim 41

The plasma reactor of claim 32, wherein each grid is closely spaced to an adjacent grid such that a small gap is formed for trapping and filtering the charged particles.

Claim 42

The plasma reactor of claim 32 wherein the first and second grids are spaced apart by a short distance, and at least one of the grids of the filter has a thickness greater than the short distance.

Claim 43

The plasma reactor of claim 32, wherein the grids are substantially parallel to the substrate.

Claim 44

The plasma reactor of claim 35, further comprising a first source of radio frequency power; and an induction coil adjacent to the plasma chamber, the induction coil coupled to the first source of radio frequency power to inductively couple power into the plasma from the first source of radio frequency power; wherein the induction coil produces an induction electric field in the plasma chamber substantially parallel to the grids and the substrate.

Claim 45

The plasma reactor of claim 36, further comprising a split Faraday shield disposed between the induction coil and the plasma chamber.

Claim 46

A plasma reactor for processing a substrate comprising: a plasma chamber for producing a plasma having charged particles and an activated neutral species; a processing chamber containing the substrate; and a filter disposed between the plasma chamber and the processing chamber, the filter comprising a plurality of adjacent grids including a first grid forming an array of closely spaced openings and a second grid forming an array of closely spaced openings offset from the array of closely spaced openings in the first grid; wherein a flow path is defined between the plasma chamber and the processing chamber and the first and second grids comprise a conductive material for filtering charged particles from the flow path; wherein each grid is closely spaced to an adjacent grid such that a small gap is formed for trapping and filtering the charged particles; and further comprising a third grid forming an array of closely spaced openings offset from the array of closely spaced openings in the second grid.

Claim 47

A plasma reactor for processing a substrate comprising: a plasma chamber for producing a plasma having charged particles and an activated neutral species; a processing chamber containing the substrate; and a filter disposed between the plasma chamber and the processing chamber, the filter comprising a plurality of adjacent grids including a first grid forming an array of closely spaced openings and a second grid forming an array of closely spaced openings offset from the array of closely spaced openings in the first grid; wherein a flow path is defined between the plasma chamber and the processing chamber and the first and second grids comprise a conductive material for filtering charged particles from the flow path; wherein each grid is closely spaced to an adjacent grid such that a small gap is formed for trapping and filtering the charged particles; and further comprising a third grid forming an array of closely spaced openings offset from the array of closely spaced openings in the second grid.

Claim 48

The plasma reactor of claim 33, further comprising a power source wherein the power source induces an electric field within the filter such that charged particles are attracted to at least one of the grids of the filter.

Claim 49

A plasma reactor for processing a substrate comprising: a chamber including a plasma producing region for producing a plasma having charged particles and an activated neutral species, the substrate positioned a distance from the plasma producing region, a flow path being defined between the plasma producing region and the substrate, the flow path being substantially perpendicular to a surface of the substrate; a first source of radio frequency power; an induction coil adjacent to the plasma producing region of the chamber, the induction coil coupled to the first source of radio frequency power to inductively couple power into the plasma from the first source of radio frequency power; a conductive material adjacent to the flow path between the plasma producing region and the substrate; and a second power source for inducing an electric field within the chamber such that charged particles are deflected from the flow path to the conductive material for filtration; wherein the average energy of the charged particles in a direction substantially perpendicular to the substrate is maintained at a substantially lower level than the average energy of the charged particles in a direction substantially parallel to the substrate; and the conductive material comprises a grid substantially transverse to the flow path.

Claim 50

A plasma reactor for processing a substrate comprising: a chamber including a plasma producing region for producing a plasma having charged particles and an activated neutral species, the substrate positioned a distance from the plasma producing region, a flow path being defined between the plasma producing region and the substrate, the flow path being substantially perpendicular to a surface of the substrate; a first source of radio frequency power; an induction coil adjacent to the plasma producing region of the chamber, the induction coil coupled to the first source of radio frequency power to inductively couple power into the plasma from the first source of radio frequency power; a conductive material adjacent to the flow path between the plasma producing region and the substrate; and a second power source for inducing an electric field within the chamber such that charged particles are deflected from the flow path to the conductive material for filtration; wherein the average energy of the charged particles in a direction substantially perpendicular to the substrate is maintained at a substantially lower level than the average energy of the charged particles in a direction substantially parallel to the substrate; and the conductive material comprises a grid substantially transverse to the flow path.

Claim 51

A plasma reactor for processing a substrate comprising: a chamber including a plasma producing region for producing a plasma having charged particles and an activated neutral species, the substrate positioned a distance from the plasma producing region, a flow path being defined between the plasma producing region and the substrate, the flow path being substantially perpendicular to a surface of the substrate; a first source of radio frequency power; an induction coil adjacent to the plasma producing region of the chamber, the induction coil coupled to the first source of radio frequency power to inductively couple power into the plasma from the first source of radio frequency power; a conductive material adjacent to the flow path between the plasma producing region and the substrate; and a second power source for inducing an electric field within the chamber such that charged particles are deflected from the flow path to the conductive material for filtration; and a split Faraday shield disposed between the induction coil and the plasma producing region of the chamber wherein the average energy of the charged particles in a direction substantially perpendicular to the substrate is maintained at a substantially lower level than the average energy of the charged particles in a direction substantially parallel to the substrate.

Claim 52

A plasma reactor for processing a substrate comprising: a chamber including a plasma producing region for producing a plasma having charged particles and an activated neutral species, the substrate positioned a distance from the plasma producing region, a flow path being defined between the plasma producing region and the substrate, the flow path being substantially perpendicular to a surface of the substrate; a first source of radio frequency power; an induction coil adjacent to the plasma producing region of the chamber, the induction coil coupled to the first source of radio frequency power to inductively couple power into the plasma from the first source of radio frequency power; a conductive material adjacent to the flow path between the plasma producing region and the substrate; and a second power source for inducing an electric field within the chamber such that charged particles are deflected from the flow path to the conductive material for filtration; and a split Faraday shield disposed between the induction coil and the plasma producing region of the chamber wherein the average energy of the charged particles in a direction substantially perpendicular to the substrate is maintained at a substantially lower level than the average energy of the charged particles in a direction substantially parallel to the substrate.

Claim 53

A plasma reactor for processing a substrate comprising: a chamber including a plasma producing region for producing a plasma having charged particles and an activated neutral species; the substrate being positioned a distance from the plasma producing region; a flow path being defined between the plasma producing region and the substrate; a first source of radio frequency power; an induction coil adjacent to the plasma producing region of the chamber, the induction coil coupled to the first source of radio frequency power to inductively couple power into the plasma from the first source of radio frequency power; a charged particle filter disposed between the plasma producing region and the substrate transverse to the flow path; and a split Faraday shield between the induction coil and the plasma, the split Faraday shield forming at least one substantially nonconductive gap such that the induction coil inductively couples power into the plasma from the first radio frequency power source; wherein the split Faraday shield substantially reduces capacitive coupling between the induction coil and the plasma thereby reducing modulation of the plasma potential relative to the potential of the charged particle filter; wherein the average energy of the charged particles in a direction substantially perpendicular to the substrate is maintained at a substantially lower level than the average energy of the charged particles in a direction substantially parallel to the substrate; and wherein the filter is substantially planar and the induction coil produces an induction electric field in the chamber that is substantially parallel to the filter.

Claim 54

A plasma reactor for processing a substrate comprising: a chamber including a plasma producing region for producing a plasma having charged particles and an activated neutral species; the substrate being positioned a distance from the plasma producing region; a flow path being defined between the plasma producing region and the substrate; a first source of radio frequency power; an induction coil adjacent to the plasma producing region of the chamber, the induction coil coupled to the first source of radio frequency power to inductively couple power into the plasma from the first source of radio frequency power; a charged particle filter disposed between the plasma producing region and the substrate transverse to the flow path; and a split Faraday shield between the induction coil and the plasma, the split Faraday shield forming at least one substantially nonconductive gap such that the induction coil inductively couples power into the plasma from the first radio frequency power source; wherein the split Faraday shield substantially reduces capacitive coupling between the induction coil and the plasma thereby reducing modulation of the plasma potential relative to the potential of the charged particle filter; wherein the average energy of the charged particles in a direction substantially perpendicular to the substrate is maintained at a substantially lower level than the average energy of the charged particles in a direction substantially parallel to the substrate; and wherein the filter is substantially planar and the induction coil produces an induction electric field in the chamber that is substantially parallel to the filter.

Claim 55

The plasma reactor of claim 42, wherein the filter comprises a conductive material.

Claim 56

A plasma reactor for processing a substrate comprising: a chamber including a plasma producing region for producing a plasma having charged particles and an activated neutral species; the substrate being positioned a distance from the plasma producing region; a flow path being defined between the plasma producing region and the substrate; a first source of radio frequency power; an induction coil adjacent to the plasma producing region of the chamber, the induction coil coupled to the first source of radio frequency power to inductively couple power into the plasma from the first source of radio frequency power; a charged particle filter disposed between the plasma producing region and the substrate transverse to the flow path; and a split Faraday shield between the induction coil and the plasma, the split Faraday shield forming at least one substantially nonconductive gap such that the induction coil inductively couples power into the plasma from the first radio frequency power source; wherein the split Faraday shield substantially reduces capacitive coupling between the induction coil and the plasma thereby reducing modulation of the plasma potential relative to the potential of the charged particle filter; wherein the average energy of the charged particles in a direction substantially perpendicular to the substrate is maintained at a substantially lower level than the average energy of the charged particles in a direction substantially parallel to the substrate; wherein the charged particle filter comprises a conductive material; and wherein the filter forms at least one hollow region and the split Faraday shield prevents hollow cathode discharge from occurring in the hollow region of the filter.

Claim 57

A plasma reactor for processing a substrate comprising: a chamber including a plasma producing region for producing a plasma having charged particles and an activated neutral species; the substrate being positioned a distance from the plasma producing region; a flow path being defined between the plasma producing region and the substrate; a first source of radio frequency power; an induction coil adjacent to the plasma producing region of the chamber, the induction coil coupled to the first source of radio frequency power to inductively couple power into the plasma from the first source of radio frequency power; a charged particle filter disposed between the plasma producing region and the substrate transverse to the flow path; and a split Faraday shield between the induction coil and the plasma, the split Faraday shield forming at least one substantially nonconductive gap such that the induction coil inductively couples power into the plasma from the first radio frequency power source; wherein the split Faraday shield substantially reduces capacitive coupling between the induction coil and the plasma thereby reducing modulation of the plasma potential relative to the potential of the charged particle filter; wherein the average energy of the charged particles in a direction substantially perpendicular to the substrate is maintained at a substantially lower level than the average energy of the charged particles in a direction substantially parallel to the substrate; wherein the charged particle filter comprises a conductive material; and wherein the filter forms at least one hollow region and the split Faraday shield prevents hollow cathode discharge from occurring in the hollow region of the filter.

Claim 58

A plasma reactor for processing a substrate comprising: a chamber including a plasma producing region for producing a plasma having charged particles and an activated neutral species; the substrate being positioned a distance from the plasma producing region; a flow path being defined between the plasma producing region and the substrate; a first source of radio frequency power; an induction coil adjacent to the plasma producing region of the chamber, the induction coil coupled to the first source of radio frequency power to inductively couple power into the plasma from the first source of radio frequency power; a charged particle filter disposed between the plasma producing region and the substrate transverse to the flow path; a split Faraday shield between the induction coil and the plasma, the split Faraday shield forming at least one substantially nonconductive gap such that the induction coil inductively couples power into the plasma from the first radio frequency power source; wherein the split Faraday shield substantially reduces capacitive coupling between the induction coil and the plasma thereby reducing modulation of the plasma potential relative to the potential of the charged particle filter; wherein the average energy of the charged particles in a direction substantially perpendicular to the substrate is maintained at a substantially lower level than the average energy of the charged particles in a direction substantially parallel to the substrate; wherein the charged particle filter comprises a conductive material; and wherein the charged particle filter comprises a plurality of adjacent grids including a first grid forming an array of closely spaced openings and a second grid forming an array of closely spaced openings offset from the array of closely spaced openings in the first grid.

Claim 59

A plasma reactor for processing a substrate comprising: a chamber including a plasma producing region for producing a plasma having charged particles and an activated neutral species; the substrate being positioned a distance from the plasma producing region; a flow path being defined between the plasma producing region and the substrate; a first source of radio frequency power; an induction coil adjacent to the plasma producing region of the chamber, the induction coil coupled to the first source of radio frequency power to inductively couple power into the plasma from the first source of radio frequency power; a charged particle filter disposed between the plasma producing region and the substrate transverse to the flow path; a split Faraday shield between the induction coil and the plasma, the split Faraday shield forming at least one substantially nonconductive gap such that the induction coil inductively couples power into the plasma from the first radio frequency power source; wherein the split Faraday shield substantially reduces capacitive coupling between the induction coil and the plasma thereby reducing modulation of the plasma potential relative to the potential of the charged particle filter; wherein the average energy of the charged particles in a direction substantially perpendicular to the substrate is maintained at a substantially lower level than the average energy of the charged particles in a direction substantially parallel to the substrate; wherein the charged particle filter comprises a conductive material; and wherein the charged particle filter comprises a plurality of adjacent grids including a first grid forming an array of closely spaced openings and a second grid forming an array of closely spaced openings offset from the array of closely spaced openings in the first grid.

Claim 60

The plasma reactor of claim 45, wherein the first and second grids are spaced apart by a short distance, and at least one of the grids of the filter has a thickness greater than the short distance.

Claim 61

The plasma reactor of claim 45, further comprising a second power source wherein the second power source induces an electric field within the filter such that charged particles are attracted to the grids of the filter.

Claim 62

A plasma reactor for processing a substrate comprising: a plasma chamber for producing a plasma; a first source of radio frequency power; an induction coil adjacent the plasma and coupled to the first source of radio frequency power to inductively couple power into the plasma from the first radio frequency power source; a split Faraday shield between the induction coil and the plasma, the split Faraday shield forming at least one substantially nonconductive gap such that the induction coil inductively couples power into the plasma from the first radio frequency power source; and a support for the substrate positioned such that the substrate is exposed to products of the plasma for processing; wherein a capacitance and an inductance are provided between the support and a ground potential and the capacitance and the inductance are selected to provide a high impedance for a given frequency of the first source of radio frequency power during processing.

Claim 63

A plasma reactor for processing a substrate comprising: a plasma chamber for producing a plasma; a first source of radio frequency power; an induction coil adjacent the plasma and coupled to the first source of radio frequency power to inductively couple power into the plasma from the first radio frequency power source; a split Faraday shield between the induction coil and the plasma, the split Faraday shield forming at least one substantially nonconductive gap such that the induction coil inductively couples power into the plasma from the first radio frequency power source; and a support for the substrate positioned such that the substrate is exposed to products of the plasma for processing; wherein a capacitance and an inductance are provided between the support and a ground potential and the capacitance and the inductance are selected to provide a high impedance for a given frequency of the first source of radio frequency power during processing.

Claim 64

The plasma reactor of claim 48, wherein the capacitance and the inductance are provided by a parallel LC circuit disposed between the support and the ground potential.

Claim 65

The plasma reactor of claim 48, further comprising a charged particle filter disposed between the plasma and the substrate.

Claim 66

A plasma reactor for processing a substrate comprising: a plasma chamber for producing a plasma; a first source of radio frequency power; an induction coil adjacent the plasma and coupled to the first source of radio frequency power to inductively couple power into the plasma from the first radio frequency power source; a split Faraday shield between the induction coil and the plasma, the split Faraday shield forming at least one substantially nonconductive gap such that the induction coil inductively couples power into the plasma from the first radio frequency power source; and a support for the substrate positioned such that the substrate is exposed to products of the plasma for processing; wherein a variable impedance is provided between the split Faraday shield and a ground potential and the variable impedance is selected such that the impedance is very low for a given frequency of the first source of radio frequency power during processing.

Claim 67

A plasma reactor for processing a substrate comprising: a plasma chamber for producing a plasma; a first source of radio frequency power; an induction coil adjacent the plasma and coupled to the first source of radio frequency power to inductively couple power into the plasma from the first radio frequency power source; a split Faraday shield between the induction coil and the plasma, the split Faraday shield forming at least one substantially nonconductive gap such that the induction coil inductively couples power into the plasma from the first radio frequency power source; and a support for the substrate positioned such that the substrate is exposed to products of the plasma for processing; wherein a variable impedance is provided between the split Faraday shield and a ground potential and the variable impedance is selected such that the impedance is very low for a given frequency of the first source of radio frequency power during processing.

Claim 68

The plasma reactor of claim 51, wherein the variable impedance is selected such that the impedance is high for the given frequency during ignition of the plasma reactor.

Claim 69

The plasma reactor of claim 51, wherein the variable impedance is provided by a series LC circuit.

Claim 70

The plasma reactor of claim 53, wherein the series LC circuit includes a variable capacitor.

Claim 71

The plasma reactor of claim 51, further comprising a charged particle filter disposed between the plasma and the substrate.

Claim 72

The plasma reactor of claim 55, wherein the charged particle filter comprises a conductive material.

Claim 73

The plasma reactor of claim 56, wherein the charged particle filter comprises a plurality of adjacent grids including a first grid forming an array of closely spaced openings and a second grid forming an array of closely spaced openings offset from the array of closely spaced openings in the first grid.