US5789764A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Antifuse with improved antifuse material
Assignee: Microsemi SoC Corp
•
Filing: 1996-11-07
•
Granted: 1998-08-04
•
Expires: 2016-11-07
Abstract
Abstract According to the present invention, an antifuse comprises first and second conductors separated by an antifuse material having a thickness selected to impart a desired target programming voltage to the antifuse. The antifuse material is of SiC and provides a solid material stable at temperatures below about 350° C., a resistivity of greater than about 10 12 ohm-cm. The antifuse material may be applied using chemical vapor deposition (CVD) techniques. Also, the SiC antifuse material of the present invention may take any one of a number of via antifuse and stacked antifuse forms.
Inventors
- 👤 John L. McCollum
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 03:34
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
50 words
An antifuse comprising: a first electrode; an antifuse material formed from a solid silicon carbide material, said silicon carbide material having a carbide to silicon ratio of between about 1:1 and about 1:100, said antifuse material disposed over said first electrode; and a second electrode disposed over said antifuse material.
Claim 2
Dependent Claim
50 words
An antifuse comprising: a first electrode; an antifuse material formed from a solid silicon carbide material, said silicon carbide material having a carbide to silicon ratio of between about 1:1 and about 1:100, said antifuse material disposed over said first electrode; and a second electrode disposed over said antifuse material.
Claim 3
Dependent Claim
30 words
An antifuse, according to claim 1, wherein said silicon carbide material is stable at temperatures below about 350° C. and has a resistivity of greater than about 10 12 ohm-cm.
Claim 4
Dependent Claim
70 words
An antifuse comprising, a first electrode; an interlayer dielectric disposed over said first electrode and having an antifuse via formed therein; an antifuse material formed from a solid silicon carbide material, said silicon carbide material having a carbide to silicon ratio of between about 1:1 and about 1:100, said antifuse material disposed in said antifuse via and over said first electrode; and a second electrode disposed over said antifuse material.
Claim 5
Dependent Claim
70 words
An antifuse comprising, a first electrode; an interlayer dielectric disposed over said first electrode and having an antifuse via formed therein; an antifuse material formed from a solid silicon carbide material, said silicon carbide material having a carbide to silicon ratio of between about 1:1 and about 1:100, said antifuse material disposed in said antifuse via and over said first electrode; and a second electrode disposed over said antifuse material.
Claim 6
Dependent Claim
30 words
An antifuse, according to claim 3, wherein said silicon carbide material is stable at temperatures below about 350° C. and has a resistivity of greater than about 10 12 ohm-cm.
Claim 7
Dependent Claim
83 words
An antifuse comprising: a first electrode; an interlayer dielectric formed over said first electrode and having an antifuse via formed therein; a conductive plug disposed in said antifuse via and planarized with an upper surface of said interlayer dielectric; an antifuse material formed from a solid silicon carbide material, said silicon carbide material having a carbide to silicon ratio of between about 1:1 and about 1:100, said antifuse material disposed over said conductive plug; and a second electrode disposed over said antifuse material.
Claim 8
Dependent Claim
83 words
An antifuse comprising: a first electrode; an interlayer dielectric formed over said first electrode and having an antifuse via formed therein; a conductive plug disposed in said antifuse via and planarized with an upper surface of said interlayer dielectric; an antifuse material formed from a solid silicon carbide material, said silicon carbide material having a carbide to silicon ratio of between about 1:1 and about 1:100, said antifuse material disposed over said conductive plug; and a second electrode disposed over said antifuse material.
Claim 9
Dependent Claim
16 words
An antifuse, according to claim 5, further comprising a barrier layer formed over said antifuse material.
Claim 10
Dependent Claim
30 words
An antifuse, according to claim 5, wherein said silicon carbide material is stable at temperatures below about 350° C. and has a resistivity of greater than about 10 12 ohm-cm.
Claim 11
Dependent Claim
88 words
An antifuse comprising: a first electrode; a barrier layer disposed over said first electrode; an antifuse material disposed over said barrier layer, said antifuse material formed from a solid silicon carbide material, said silicon carbide material having a carbide to silicon ratio of between about 1:1 and about 1:100; an interlayer dielectric formed over said antifuse material and having an antifuse via formed therein; a conductive plug disposed in said antifuse via and in contact with said antifuse material; and a second electrode disposed over said conductive plug.
Claim 12
Dependent Claim
88 words
An antifuse comprising: a first electrode; a barrier layer disposed over said first electrode; an antifuse material disposed over said barrier layer, said antifuse material formed from a solid silicon carbide material, said silicon carbide material having a carbide to silicon ratio of between about 1:1 and about 1:100; an interlayer dielectric formed over said antifuse material and having an antifuse via formed therein; a conductive plug disposed in said antifuse via and in contact with said antifuse material; and a second electrode disposed over said conductive plug.
Claim 13
Dependent Claim
30 words
An antifuse, according to claim 8, wherein said silicon carbide material is stable at temperatures below about 350° C. and has a resistivity of greater than about 10 12 ohm-cm.
Claim 14
Dependent Claim
101 words
An antifuse comprising: a first electrode; a first barrier layer disposed over said first electrode; an antifuse material disposed over said first barrier layer, said antifuse material formed from a solid silicon carbide material, said silicon carbide material having a carbide to silicon ratio of between about 1:1 and about 1:100; a second barrier layer disposed over said antifuse material; an interlayer dielectric formed over said second barrier layer and having an antifuse via formed therein; a conductive plug disposed in said antifuse via and in contact with said second barrier layer; and a second electrode disposed over said conductive plug.
Claim 15
Dependent Claim
101 words
An antifuse comprising: a first electrode; a first barrier layer disposed over said first electrode; an antifuse material disposed over said first barrier layer, said antifuse material formed from a solid silicon carbide material, said silicon carbide material having a carbide to silicon ratio of between about 1:1 and about 1:100; a second barrier layer disposed over said antifuse material; an interlayer dielectric formed over said second barrier layer and having an antifuse via formed therein; a conductive plug disposed in said antifuse via and in contact with said second barrier layer; and a second electrode disposed over said conductive plug.
Claim 16
Dependent Claim
30 words
An antifuse, according to claim 10, wherein said silicon carbide material is stable at temperatures below about 350° C. and has a resistivity of greater than about 10 12 ohm-cm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-03 | 2002-02-02 | 2002-08-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-03 | 2006-02-02 | 2006-08-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-03 | 2010-02-02 | 2010-08-04 | $7700.00 | Window Closed / Lapsed |