Patent US6579760B1 successfully refreshed from Google Patents.
US6579760B1
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Self-aligned, programmable phase change memory
Assignee: Macronix International Co Ltd
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Filing: 2002-03-28
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Granted: 2003-06-17
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Expires: 2022-03-28
Abstract
Abstract A self-aligned, nonvolatile memory structure based upon phase change materials, including chalcogenides, can be made with a very small area on an integrated circuit. The manufacturing process results in self-aligned memory cells requiring only two array-related masks defining the bit lines and word lines. Memory cells are defined at intersections of bit lines and word lines, and have dimensions that are defined by the widths of the bit lines and word lines in a self-aligned process. The memory cells comprise structures including a selection device, a heating/barrier plate layer and a phase change memory element, vertically arranged at the intersections of the bit lines and word lines.
Inventors
- 👤 Hsiang-Lan Lung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 13:44
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/56; G11C11/5678; H; H10; H10B; H10B63/00; H10B63/20; H10B63/80; G11C13/00; G11C13/0002; G11C13/0004; G11C2213/00; G11C2213/70; G11C2213/72; H10N; H10N70/00; H10N70/011; H10N70/061; H10N70/063; H10N70/20; H10N70/231; H10N70/801; H10N70/821; H10N70/826; H10N70/841; H10N70/8413
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
86 words
A memory device, comprising: a substrate; a first plurality of conductive lines on the substrate extending in a first direction; a second plurality of conductive lines above the first plurality of conductive lines, and extending in second direction and crossing over the first plurality of conductive lines at intersections; a plurality of memory cells at said intersections and in electrical contact with the first and second pluralities of conductive lines, the memory cells comprising self-aligned structures including a selection device, and a phase change memory element.
Claim 2
Dependent Claim
86 words
A memory device, comprising: a substrate; a first plurality of conductive lines on the substrate extending in a first direction; a second plurality of conductive lines above the first plurality of conductive lines, and extending in second direction and crossing over the first plurality of conductive lines at intersections; a plurality of memory cells at said intersections and in electrical contact with the first and second pluralities of conductive lines, the memory cells comprising self-aligned structures including a selection device, and a phase change memory element.
Claim 3
Dependent Claim
59 words
The memory device of claim 1 , wherein said memory cells comprise respective multi-layer stacks including a layer or layers of material adapted to act as said selection device, and a layer or layers of material selected for formation of a heating/barrier element, and a layer or layers of material adapted to act as said phase change memory element.
Claim 4
Dependent Claim
17 words
The memory device of claim 1 , wherein said phase change memory elements comprise respective chalcogenide bodies.
Claim 5
Dependent Claim
21 words
The memory device of claim 3 , wherein said chalcogenide bodies comprise respective films having substantially uniform thickness across said intersections.
Claim 6
Dependent Claim
86 words
The memory device of claim 1 , wherein said memory cells comprise respective multi-layer stacks including a layer or layers of material adapted to act as said selection device, and an intermediate layer of material having a first resistance and a layer of phase change material adjacent the intermediate layer, and having a first phase having a lower resistance and a second phase having a higher resistance, wherein the first resistance is greater than the higher resistance of the phase change material in the second phase.
Claim 7
Dependent Claim
22 words
The memory device of claim 5 , wherein said intermediate layer comprises a barrier to at least one of diffusion and electromigration.
Claim 8
Dependent Claim
43 words
The memory device of claim 5 , wherein said layer or layers of material adapted to act as a selection device, comprise a first polysilicon layer with p-type dopant and a second polysilicon layer with n-type dopant adapted for formation of a diode.
Claim 9
Dependent Claim
80 words
The memory device of claim 1 , wherein said memory cells comprise respective multi-layer stacks including a layer or layers of material adapted to act as said selection device, and a layer or layers of material selected for formation of a heating/barrier element, and a layer or layers of material adapted to act as said phase change memory element, wherein said layer or layers of material adapted to act as said phase change memory element comprise a layer of chalcogenide.
Claim 10
Dependent Claim
26 words
The memory device of claim 8 , wherein said layer of chalcogenide overlays said layer or layers of material selected for formation of a selection device.
Claim 11
Dependent Claim
43 words
The memory device of claim 8 , wherein said layer or layers of material adapted to act as a selection device, comprise a first polysilicon layer with p-type dopant and a second polysilicon layer with n-type dopant adapted for formation of a diode.
Claim 12
Dependent Claim
15 words
The memory device of claim 1 wherein said substrate includes an insulator at said surface.
Claim 13
Dependent Claim
21 words
The memory device of claim 1 , wherein said substrate comprises an integrated circuit device, with an insulator at said surface.
Claim 14
Dependent Claim
34 words
The memory device of claim 1 , wherein said phase change memory element is adapted to store more than one bit by assuming more than two bulk resistance states in response to programming current.
Claim 15
Dependent Claim
124 words
A memory device, comprising: a substrate having a surface, including integrated circuitry and an insulation layer on the surface; a first plurality of conductive lines on the insulation layer on the surface of the substrate extending in a first direction, and contacting said integrated circuitry at contact points; a second plurality of conductive lines above the first plurality of conductive lines, and extending in second direction and crossing over the first plurality of conductive lines at intersections, and contacting said integrated circuitry at contact points; a plurality of memory cells at said intersections and in electrical contact with the first and second pluralities of conductive lines, the memory cells comprising self-aligned structures including a selection device, an intermediate layer and a chalcogenide memory element.
Claim 16
Dependent Claim
124 words
A memory device, comprising: a substrate having a surface, including integrated circuitry and an insulation layer on the surface; a first plurality of conductive lines on the insulation layer on the surface of the substrate extending in a first direction, and contacting said integrated circuitry at contact points; a second plurality of conductive lines above the first plurality of conductive lines, and extending in second direction and crossing over the first plurality of conductive lines at intersections, and contacting said integrated circuitry at contact points; a plurality of memory cells at said intersections and in electrical contact with the first and second pluralities of conductive lines, the memory cells comprising self-aligned structures including a selection device, an intermediate layer and a chalcogenide memory element.
Claim 17
Dependent Claim
23 words
The memory device of claim 14 , wherein said chalcogenide memory elements comprise respective chalcogenide films having substantially uniform thickness across said intersections.
Claim 18
Dependent Claim
58 words
The memory device of claim 14 , wherein said intermediate layer has a first resistance and said chalcogenide memory element comprises a chalcogenide material having a first phase having a lower resistance and a second phase having a higher resistance, wherein the first resistance is greater than the higher resistance of the chalcogenide material in the second phase.
Claim 19
Dependent Claim
15 words
The memory device of claim 14 , wherein the intermediate layer comprises a heating element.
Claim 20
Dependent Claim
22 words
The memory device of claim 14 , wherein the intermediate layer comprises a barrier to at least one of diffusion and electromigration.
Claim 21
Dependent Claim
33 words
The memory device of claim 14 , wherein said selection devices comprise a first polysilicon layer with p-type dopant and a second polysilicon layer with n-type dopant adapted for formation of a diode.
Claim 22
Dependent Claim
33 words
The memory device of claim 14 , wherein said chalcogenide memory element is adapted to store more than one bit by assuming more than two bulk resistance states in response to programming current.
References Cited (Backward Citations)
US4719594A
Cited
US5177563A
Cited
US6077729A
Cited
US5789758A
Cited
US6117720A
Cited
US5879955A
Cited
US5920788A
Cited
US6104038A
Cited
US5837564A
Cited
US5687112A
Cited
USRE37259E1
Cited
US6025220A
Cited
US6111264A
Cited
US5814527A
Cited
US5789277A
Cited
US5985698A
Cited
US6236059B1
Cited
US6153890A
Cited
US6150253A
Cited
US6147395A
Cited
US6114713A
Cited
US5952671A
Cited
US6031287A
Cited
US6131287A
Cited
US6034882A
Cited
US6185122B1
Cited
US6351406B1
Cited
WO2000079539A1
Cited
WO2001045108A1
Cited
US6314014B1
Cited
US20010055838A1
Cited
US20020081833A1
Cited
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