US6153890A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Memory cell incorporating a chalcogenide element
Assignee: Round Rock Research LLC
•
Filing: 1999-08-13
•
Granted: 2000-11-28
•
Expires: 2019-08-13
Abstract
Abstract A memory cell incorporating a chalcogenide element and a method of making same is disclosed. In the method, a doped silicon substrate is provided with two or more polysilicon plugs to form an array of diode memory cells. A layer of silicon nitride is disposed over the plugs. Using a poly-spacer process, small pores are formed in the silicon nitride to expose a portion of the polysilicon plugs. A chalcogenide material is disposed in the pores by depositing a layer of chalcogenide material on the silicon nitride layer and planarizing the chalcogenide layer to the silicon nitride layer using CMP. A layer of TiN is next deposited over the plugs, followed by a metallization layer. The TiN and metallization layers are then masked and etched to define memory cell areas.
Inventors
- 👤 Graham R. Wolstenholme
- 👤 Fernando Gonzalez
- 👤 Russell C. Zahorik
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 10:18
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10B; H10B63/00; H10B63/10; H10B63/20; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/084
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
47 words
A memory element comprising: a substrate; a layer of insulating material disposed on the substrate, the layer of insulating material being adapted to act as a stop for chemical mechanical planarization, the layer of insulating material having an opening therein; and chalcogenide material disposed within the opening.
Claim 2
Dependent Claim
47 words
A memory element comprising: a substrate; a layer of insulating material disposed on the substrate, the layer of insulating material being adapted to act as a stop for chemical mechanical planarization, the layer of insulating material having an opening therein; and chalcogenide material disposed within the opening.
Claim 3
Dependent Claim
18 words
The memory element, as set forth in claim 1, wherein the layer of insulating material comprises a nitride.
Claim 4
Dependent Claim
18 words
The memory element, as set forth in claim 1, further comprising an access device disposed in the substrate.
Claim 5
Dependent Claim
16 words
The memory element, as set forth in claim 3, wherein the access device comprises a diode.
Claim 6
Dependent Claim
39 words
The memory element, as set forth in claim 1, further comprising: a first electrode disposed between the substrate and the chalcogenide material within the opening; and a second electrode disposed over the layer of chalcogenide material within the opening.
Claim 7
Dependent Claim
23 words
The memory element, as set forth in claim 5, wherein each of the first electrode and the second electrode comprise multiple conductive layers.
Claim 8
Dependent Claim
19 words
The memory element, as set forth in claim 1, wherein the chalcogenide material is disposed only within the opening.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-28 | 2004-05-29 | 2004-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-28 | 2008-05-29 | 2008-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-28 | 2012-05-29 | 2012-11-28 | $7700.00 | Window Closed / Lapsed |