US6610593B2 — Fabrication of semiconductor device with air gaps…

Claim 1

Independent Claim 116 words

A method of forming an air gap within a semiconductor structure comprising the steps of: (i) using a sacrificial material to occupy a closed interior volume in a semiconductor structure; (ii) causing the sacrificial material to decompose into one or more gaseous decomposition products; and (iii) removing at least one of the one or more gaseous decomposition products by passage through at least one solid layer contiguous to the interior volume, wherein the decomposition of the sacrificial material leaves an air gap at the closed interior volume previously occupied thereby, and the sacrificial material comprises a polymer composition selected from one or more polycarbonate polymers, polyester polymers, polyether polymers, methacrylate polymers, acrylate polymers, or mixtures thereof.

Claim 2

Independent Claim 116 words

A method of forming an air gap within a semiconductor structure comprising the steps of: (i) using a sacrificial material to occupy a closed interior volume in a semiconductor structure; (ii) causing the sacrificial material to decompose into one or more gaseous decomposition products; and (iii) removing at least one of the one or more gaseous decomposition products by passage through at least one solid layer contiguous to the interior volume, wherein the decomposition of the sacrificial material leaves an air gap at the closed interior volume previously occupied thereby, and the sacrificial material comprises a polymer composition selected from one or more polycarbonate polymers, polyester polymers, polyether polymers, methacrylate polymers, acrylate polymers, or mixtures thereof.

Claim 3

Dependent Claim 95 words

The method of claim 1 , wherein the sacrificial material is a polycarbonate polymer comprises repeating units represented by the general formula of: where R represents linear and branched (C 1 to C 20 ) alkyl, hydrocarbyl substituted and unsubstituted (C 5 to C 12 ) cycloalkyl, hydrocarbyl substituted and unsubstituted (C 6 to C 40 ) aryl, hydrocarbyl substituted and unsubstituted (C 7 to C 15 ) aralkyl, (C 3 to C 20 ) alkynyl, linear and branched (C 3 to C 20 ) alkenyl and n is equal to 2 to about 100,000.

Claim 4

Dependent Claim 15 words

The method of claim 2 , wherein n is equal to 2 to about 10,000.

Claim 5

Dependent Claim 15 words

The method of claim 2 , wherein n is equal to 2 to about 1,000.

Claim 6

Dependent Claim 21 words

The method of claim 2 , wherein the sacrificial material is selected from polyethylene carbonate, polyproplyene carbonate or a mixture thereof.

Claim 7

Dependent Claim 104 words

The method of claim 1 , wherein the sacrificial material is a polyester polymer comprising repeating units represented by the general formula of: where R represents linear and branched (C 1 to C 20 ) alkyl, hydrocarbyl substituted and unsubstituted (C 5 to C 12 ) cycloalkyl, hydrocarbyl substituted and unsubstituted (C 6 to C 40 ) aryl, hydrocarbyl substituted and unsubstituted (C 7 to C 15 ) aralkyl, (C 3 to C 20 ) alkynyl, linear and branched (C 3 to C 20 ) alkenyl; x is an integer from 1 to about 20; and n is equal to 2 to about 100,000.

Claim 8

Dependent Claim 15 words

The method of claim 6 , wherein n is equal to 2 to about 10,000.

Claim 9

Dependent Claim 15 words

The method of claim 6 , wherein n is equal to 2 to about 1,000.

Claim 10

Dependent Claim 16 words

The method of claim 6 , wherein x is an integer from 1 to about 10.

Claim 11

Dependent Claim 16 words

The method of claim 6 , wherein x is an integer from 1 to about 6.

Claim 12

Dependent Claim 100 words

The method of claim 1 , wherein the sacrificial material is a polyether polymer comprising repeating units represented by the general formula of: where R 20 and R 21 independently represent linear and branched (C 1 to C 20 ) alkyl, hydrocarbyl substituted and unsubstituted (C 5 to C 12 ) cycloalkyl, hydrocarbyl substituted and unsubstituted (C 6 to C 40 ) aryl, hydrocarbyl substituted and unsubstituted (C 7 to C 15 ) aralkyl, (C 3 to C 20 ) alkynyl, linear and branched (C 3 to C 20 ) alkenyl and n is equal to 2 to about 100,000.

Claim 13

Dependent Claim 15 words

The method of claim 11 , wherein n is equal to 2 to about 10,000.

Claim 14

Dependent Claim 15 words

The method of claim 11 , wherein n is equal to 2 to about 1,000.

Claim 15

Dependent Claim 39 words

The method of claim 1 , wherein the sacrificial material is selected from a polymethyl methacrylate polymer, an acrylate polymer or a mixture thereof where the polymers present each have a molecular weight of about 1,000 to about 1,000,000.

Claim 16

Dependent Claim 24 words

The method of claim 14 , wherein the polymethyl methacrylate and/or the acrylate polymer has a molecular weight of about 10,000 to about 500,000.

Claim 17

Dependent Claim 24 words

The method of claim 14 , wherein the polymethyl methacrylate and/or the acrylate polymer has a molecular weight of about 100,000 to about 250,000.

Claim 18

Independent Claim 157 words

A method of forming one or more air gaps in a semiconductor structure comprising the steps of: (I) forming a patterned layer of sacrificial material on a substrate corresponding to a pattern of one or more gaps to be formed in the semiconductor structure; (II) depositing a second material on the substrate within regions bordered by the sacrificial material; (III) forming an overcoat layer of material overlying the patterned layer of sacrificial material and second material in the regions bordered by the sacrificial material; (IV) causing the sacrificial material to decompose into one or more gaseous decomposition products; and (V) removing at least one of the one or more gaseous decomposition products by passage through the overcoat layer so that one or more air gaps are formed within the semiconductor structure, wherein the sacrificial material is a polymer composition selected from one or more polycarbonate polymers, polyester polymers, polyether polymers, methacrylate polymers, acrylate polymers, or mixtures thereof.

Claim 19

Independent Claim 157 words

A method of forming one or more air gaps in a semiconductor structure comprising the steps of: (I) forming a patterned layer of sacrificial material on a substrate corresponding to a pattern of one or more gaps to be formed in the semiconductor structure; (II) depositing a second material on the substrate within regions bordered by the sacrificial material; (III) forming an overcoat layer of material overlying the patterned layer of sacrificial material and second material in the regions bordered by the sacrificial material; (IV) causing the sacrificial material to decompose into one or more gaseous decomposition products; and (V) removing at least one of the one or more gaseous decomposition products by passage through the overcoat layer so that one or more air gaps are formed within the semiconductor structure, wherein the sacrificial material is a polymer composition selected from one or more polycarbonate polymers, polyester polymers, polyether polymers, methacrylate polymers, acrylate polymers, or mixtures thereof.

Claim 20

Dependent Claim 95 words

The method of claim 17 , wherein the sacrificial material is a polycarbonate polymer comprising repeating units represented by the general formula of: where R represents linear and branched (C 1 to C 20 ) alkyl, hydrocarbyl substituted and unsubstituted (C 5 to C 12 ) cycloalkyl, hydrocarbyl substituted and unsubstituted (C 6 to C 40 ) aryl, hydrocarbyl substituted and unsubstituted (C 7 to C 15 ) aralkyl, (C 3 to C 20 ) alkynyl, linear and branched (C 3 to C 20 ) alkenyl and n is equal to 2 to about 100,000.

Claim 21

Dependent Claim 15 words

The method of claim 18 , wherein n is equal to 2 to about 10,000.

Claim 22

Dependent Claim 21 words

The method of claim 18 , wherein the sacrificial material is selected from polyethylene carbonate, polyproplyene carbonate or a mixture thereof.

Claim 23

Dependent Claim 104 words

The method of claim 17 , wherein the sacrificial material is a polyester polymer comprising repeating units represented by the general formula of: where R represents linear and branched (C 1 to C 20 ) alkyl, hydrocarbyl substituted and unsubstituted (C 5 to C 12 ) cycloalkyl, hydrocarbyl substituted and unsubstituted (C 6 to C 40 ) aryl, hydrocarbyl substituted and unsubstituted (C 7 to C 15 ) aralkyl, (C 3 to C 20 ) alkynyl, linear and branched (C 3 to C 20 ) alkenyl; x is an integer from 1 to about 20; and n is equal to 2 to about 100,000.

Claim 24

Dependent Claim 15 words

The method of claim 21 , wherein n is equal to 2 to about 10,000.

Claim 25

Dependent Claim 16 words

The method of claim 21 , wherein x is an integer from 1 to about 10.

Claim 26

Dependent Claim 100 words

The method of claim 17 , wherein the sacrificial material is a polyether polymer comprising repeating units represented by the general formula of: where R 20 and R 21 independently represent linear and branched (C 1 to C 20 ) alkyl, hydrocarbyl substituted and unsubstituted (C 5 to C 12 ) cycloalkyl, hydrocarbyl substituted and unsubstituted (C 6 to C 40 ) aryl, hydrocarbyl substituted and unsubstituted (C 7 to C 15 ) aralkyl, (C 3 to C 20 ) alkynyl, linear and branched (C 3 to C 20 ) alkenyl and n is equal to 2 to about 100,000.

Claim 27

Dependent Claim 15 words

The method of claim 24 , wherein n is equal to 2 to about 10,000.

Claim 28

Dependent Claim 39 words

The method of claim 17 , wherein the sacrificial material is selected from a polymethyl methacrylate polymer, an acrylate polymer or a mixture thereof where the polymers present each have a molecular weight of about 1,000 to about 1,000,000.

Claim 29

Dependent Claim 24 words

The method of claim 26 , wherein the polymethyl methacrylate and/or the acrylate polymer has a molecular weight of about 10,000 to about 500,000.

Claim 30

Independent Claim 105 words

A method of forming air gaps within a semiconductor structure comprising the steps of: using at least one sacrificial material to occupy simultaneously or sequentially at least two closed interior volumes in a semiconductor structure, wherein the at least two closed interior volumes are on different levels of the semiconductor structure; causing the at least one sacrificial material occupying the at least two closed interior volumes to decompose either simultaneously or sequentially into one or more gaseous decomposition products; and removing at least one of the one or more gaseous decomposition products by passage through at least one solid layer contiguous to the interior volume.

Claim 31

Independent Claim 105 words

A method of forming air gaps within a semiconductor structure comprising the steps of: using at least one sacrificial material to occupy simultaneously or sequentially at least two closed interior volumes in a semiconductor structure, wherein the at least two closed interior volumes are on different levels of the semiconductor structure; causing the at least one sacrificial material occupying the at least two closed interior volumes to decompose either simultaneously or sequentially into one or more gaseous decomposition products; and removing at least one of the one or more gaseous decomposition products by passage through at least one solid layer contiguous to the interior volume.

Claim 32

Dependent Claim 39 words

The method of claim 28 , wherein the at least one sacrificial material is simultaneously decomposed into one or more gaseous decomposition products which are remove via passage through at least one solid layer contiguous to the interior volume.

Claim 33

Dependent Claim 34 words

The method of claim 29 , wherein the at least one sacrificial material is selected from one or more norbornene polymers, polycarbonate polymers, polyester polymers, polyether polymers, methacrylate polymers, acrylate polymers, or mixtures thereof.

Claim 34

Dependent Claim 21 words

The method of claim 30 , wherein the at least one sacrificial material is selected from one or more norbornene polymers.

Claim 35

Dependent Claim 161 words

The method of claim 31 , wherein the norbornene polymer comprises repeating units of the general formula: wherein R 1 and R 4 independently represent hydrogen or linear or branched (C 1 to C 20 ) alkyl; R 2 and R 3 independently represent hydrogen, linear or branched (C 1 to C 20 ) alkyl or the groups: R 9 independently is hydrogen, methyl, or ethyl; R 10 , R 11 , and R 12 independently represent linear or branched (C 1 to C 20 ) alkyl, linear or branched (C 1 to C 20 ) alkoxy, linear or branched (C 1 to C 20 ) alkyl carbonyloxy, and substituted or unsubstituted (C 6 to C 20 ) aryloxy; m is a number from 0 to 4; and n is a number from 0 to 5; and at least one of substituents R 2 and R 3 is selected from the silyl group represented by the formula set forth under Ia.

Claim 36

Dependent Claim 52 words

The method of claim 32 , wherein in Formula I above, m is preferably 0 or 1 as represented by structures Ib and Ic, respectively: wherein R 1 to R 4 are as previously defined and at least one of R 2 and R 3 is a silyl substituent represented by Ia.

Claim 37

Dependent Claim 57 words

The method of claim 32 , wherein R 1 and R 4 taken together with the two ring carbon atoms to which they are attached comprise a repeating unit of the following structure: wherein B is a methylene group, q is a number from 2 to 6, and R 2 and R 3 are as defined above.

Claim 38

Dependent Claim 181 words

The method of claim 32 , wherein the norbornene polymer further comprises hydrocarbyl substituted polycyclic repeating units selected from units represented by Formula II below: wherein R 5 , R 6 , R 7 , and R 8 independently represent hydrogen, linear and branched (C 1 to C 20 ) alkyl, hydrocarbyl substituted and unsubstituted (C 5 to C 12 ) cycloalkyl, hydrocarbyl substituted and unsubstituted (C 6 to C 40 ) aryl, hydrocarbyl substituted and unsubstituted (C 7 to C 15 ) aralkyl, (C 3 to C 20 ) alkynyl, linear and branched (C 3 to C 20 ) alkenyl, or vinyl; any of R 5 and R 6 or R 7 and R 8 can be taken together to form a (C 1 to C 10 ) alkylidenyl group, R 5 and R 8 when taken with the two ring carbon atoms to which they are attached can represent saturated and unsaturated cyclic groups containing 4 to 12 carbon atoms or an aromatic ring containing 6 to 17 carbon atoms; and p is 0, 1, 2, 3, or 4.

Claim 39

Dependent Claim 135 words

The method of claim 31 , wherein the norbornene polymer comprises repeating units represented by Formula III below: wherein R 9 to R 12 independently represent a polar substituent selected from the group: —(A) n —C(O)OR″, —(A) n —OR″, —(A) n —OC(O)R″, —(A) n —OC(O)OR″, —(A) n —C(O)R″, —(A) n —OC(O)C(O)OR″, —(A) n —O—A′—C(O)OR″, —(A) n —OC(O)—A′—C(O)OR″, —(A) n —C(O)O—A′—C(O)OR″, —(A) n —C(O)—A′—OR″, —(A) n —C(O)O—A′—OC(O)OR″, —(A) n —C(O)O—A′—O—A′—C(O)OR″, —(A) n —C(O)O—A′—OC(O)C(O)OR″, —(A) n —C(R″) 2 CH(R″)(C(O)OR″), and —(A) n —C(R″) 2 CH(C(O)OR″) 2 ; p is 0, 1, 2, 3, 4, or 5; the moieties A and A′ independently represent a divalent bridging or spacer group selected from divalent hydrocarbon groups, divalent cyclic hydrocarbon groups, divalent oxygen containing groups, and divalent cyclic ethers and cyclic diethers; and n is an integer 0 or 1.

Claim 40

Dependent Claim 466 words

The method of claim 31 , wherein the norbornene polymer comprises copolymers comprising a combination of repeating units represented by Formulae I and II, Formulae I and III, Formulae II and III or Formulae I, II and III, where Formula I is: wherein R 1 and R 4 independently represent hydrogen or linear or branched (C 1 to C 20 ) alkyl; R 2 and R 3 independently represent hydrogen, linear or branched (C 1 to C 20 ) alkyl or the groups: R 9 independently is hydrogen, methyl, or ethyl; R 10 , R 11 , and R 12 independently represent linear or branched (C 1 to C 20 ) alkyl, linear or branched (C 1 to C 20 ) alkoxy, linear or branched (C 1 to C 20 ) alkyl carbonyloxy, and substituted or unsubstituted (C 6 to C 20 ) aryloxy; m is a number from 0 to 4; and n is a number from 0 to 5; and at least one of substituents R 2 and R 3 is selected from the silyl group represented by the formula set forth under Ia; Formula II is wherein R 5 , R 6 , R 7 , and R 8 independently represent hydrogen, linear and branched (C 1 to C 20 ) alkyl, hydrocarbyl substituted and unsubstituted (C 5 to C 12 ) cycloalkyl, hydrocarbyl substituted and unsubstituted (C 6 to C 40 ) aryl, hydrocarbyl substituted and unsubstituted (C 7 to C 15 ) aralkyl, (C 3 to C 20 ) alkynyl, linear and branched (C 3 to C 20 ) alkenyl, or vinyl; any of R 5 and R 6 or R 7 and R 8 can be taken together to form a (C 1 to C 10 ) alkylidenyl group, R 5 and R 8 when taken with the two ring carbon atoms to which they are attached can represent saturated and unsaturated cyclic groups containing 4 to 12 carbon atoms or an aromatic ring containing 6 to 17 carbon atoms; and p is 0, 1, 2, 3, or 4; and Formula III is wherein R 9 to R 12 independently represent a polar substituent selected from the group: —(A) n —C(O)OR″, —(A) n —OR″, —(A) n —OC(O)R″, —(A) n —OC(O)OR″, —(A) n —C(O)R″, —(A) n —OC(O)C(O)OR″, —(A) n —O—A′—C(O)OR″, —(A) n —OC(O)—A′—C(O)OR″, —(A) n —C(O)O—A′—C(O)OR″, —(A) n —C(O)—A′—OR″, —(A) n —C(O)O—A′—OC(O)OR″, —(A) n —C(O)O—A′—O—A′—C(O)OR″, —(A) n —C(O)O—A′—OC(O)C(O)OR″, —(A) n —C(R″) 2 CH(R″)(C(O)OR″), and —(A) n —C(R″) 2 CH(C(O)OR″) 2 ; p is 0, 1, 2, 3, 4, or 5; the moieties A and A′ independently represent a divalent bridging or spacer group selected from divalent hydrocarbon groups, divalent cyclic hydrocarbon groups, divalent oxygen containing groups, and divalent cyclic ethers and cyclic diethers; and n is an integer 0 or 1.

Claim 41

Dependent Claim 21 words

The method of claim 28 , wherein the at least one sacrificial material is selected from one or more norbornene polymers.

Claim 42

Dependent Claim 32 words

The method of claim 28 , wherein the at least one sacrificial material is selected from one or more polycarbonate polymers, polyester polymers, polyether polymers, methacrylate polymers, acrylate polymers, or mixtures thereof.

Claim 43

Dependent Claim 95 words

The method of claim 39 , wherein the sacrificial material is a polycarbonate polymer comprises repeating units represented by the general formula of: where R represents linear and branched (C 1 to C 20 ) alkyl, hydrocarbyl substituted and unsubstituted (C 5 to C 12 ) cycloalkyl, hydrocarbyl substituted and unsubstituted (C 6 to C 40 ) aryl, hydrocarbyl substituted and unsubstituted (C 7 to C 15 ) aralkyl, (C 3 to C 20 ) alkynyl, linear and branched (C 3 to C 20 ) alkenyl and n is equal to 2 to about 100,000.

Claim 44

Dependent Claim 15 words

The method of claim 40 , wherein n is equal to 2 to about 10,000.

Claim 45

Dependent Claim 21 words

The method of claim 40 , wherein the sacrificial material is selected from polyethylene carbonate, polyproplyene carbonate or a mixture thereof.

Claim 46

Dependent Claim 104 words

The method of claim 39 , wherein the sacrificial material is a polyester polymer comprising repeating units represented by the general formula of: where R represents linear and branched (C 1 to C 20 ) alkyl, hydrocarbyl substituted and unsubstituted (C 1 to C 12 ) cycloalkyl, hydrocarbyl substituted and unsubstituted (C 6 to C 40 ) aryl, hydrocarbyl substituted and unsubstituted (C 7 to C 15 ) aralkyl, (C 3 to C 20 ) alkynyl, linear and branched (C 3 to C 20 ) alkenyl; x is an integer from 1 to about 20; and n is equal to 2 to about 100,000.

Claim 47

Dependent Claim 15 words

The method of claim 43 , wherein n is equal to 2 to about 10,000.

Claim 48

Dependent Claim 16 words

The method of claim 43 , wherein x is an integer from 1 to about 10.

Claim 49

Dependent Claim 100 words

The method of claim 39 , wherein the sacrificial material is a polyether polymer comprising repeating units represented by the general formula of: where R 20 and R 21 independently represent linear and branched (C 1 to C 20 ) alkyl, hydrocarbyl substituted and unsubstituted (C 5 to C 12 ) cycloalkyl, hydrocarbyl substituted and unsubstituted (C 6 to C 40 ) aryl, hydrocarbyl substituted and unsubstituted (C 7 to C 15 ) aralkyl, (C 3 to C 20 ) alkynyl, linear and branched (C 3 to C 20 ) alkenyl and n is equal to 2 to about 100,000.

Claim 50

Dependent Claim 15 words

The method of claim 46 , wherein n is equal to 2 to about 10,000.

Claim 51

Dependent Claim 39 words

The method of claim 39 , wherein the sacrificial material is selected from a polymethyl methacrylate polymer, an acrylate polymer or a mixture thereof where the polymers present each have a molecular weight of about 1,000 to about 1,000,000.

Claim 52

Independent Claim 298 words

A method of forming one or more air gaps in a semiconductor structure comprising the steps of: (A) forming a patterned layer of a first sacrificial material on one side of a substrate corresponding to a pattern of one or more gaps to be formed in the semiconductor structure; (B) depositing a second material on the substrate within regions bordered by the first sacrificial material; (C) forming a first overcoat layer of material overlying the patterned layer of the first sacrificial material and the second material in the regions bordered by the first sacrificial material; (D) causing the first sacrificial material to decompose into one or more gaseous decomposition products; (E) removing at least one of the one or more gaseous decomposition products by passage through the first overcoat layer so that one or more air gaps are formed within the semiconductor structure; (F) forming a patterned layer of a second sacrificial material on the first overcoat layer corresponding to a pattern of one or more gaps to be formed in the semiconductor structure; (G) depositing a third material on the first overcoat layer substrate within regions bordered by the second sacrificial material; (H) forming a second overcoat layer of material overlying the patterned layer of the second sacrificial material and the third material in the regions bordered by the second sacrificial material; (I) causing the second sacrificial material to decompose into one or more gaseous decomposition products; and (J) removing at least one of the one or more gaseous decomposition products by passage through the overcoat layers so that one or more air gaps are formed within the semiconductor structure, wherein the first and second sacrificial materials are independently selected from one or more polycarbonate polymers, polyester polymers, polyether polymers, methacrylate polymers, acrylate polymers, or mixtures thereof.

Claim 53

Independent Claim 298 words

A method of forming one or more air gaps in a semiconductor structure comprising the steps of: (A) forming a patterned layer of a first sacrificial material on one side of a substrate corresponding to a pattern of one or more gaps to be formed in the semiconductor structure; (B) depositing a second material on the substrate within regions bordered by the first sacrificial material; (C) forming a first overcoat layer of material overlying the patterned layer of the first sacrificial material and the second material in the regions bordered by the first sacrificial material; (D) causing the first sacrificial material to decompose into one or more gaseous decomposition products; (E) removing at least one of the one or more gaseous decomposition products by passage through the first overcoat layer so that one or more air gaps are formed within the semiconductor structure; (F) forming a patterned layer of a second sacrificial material on the first overcoat layer corresponding to a pattern of one or more gaps to be formed in the semiconductor structure; (G) depositing a third material on the first overcoat layer substrate within regions bordered by the second sacrificial material; (H) forming a second overcoat layer of material overlying the patterned layer of the second sacrificial material and the third material in the regions bordered by the second sacrificial material; (I) causing the second sacrificial material to decompose into one or more gaseous decomposition products; and (J) removing at least one of the one or more gaseous decomposition products by passage through the overcoat layers so that one or more air gaps are formed within the semiconductor structure, wherein the first and second sacrificial materials are independently selected from one or more polycarbonate polymers, polyester polymers, polyether polymers, methacrylate polymers, acrylate polymers, or mixtures thereof.

Claim 54

Independent Claim 253 words

A method of forming one or more air gaps in a semiconductor structure comprising the steps of: (A) forming a patterned layer of a first sacrificial material on one side of a substrate corresponding to a pattern of one or more gaps to be formed in the semiconductor structure; (B) depositing a second material on the substrate within regions bordered by the first sacrificial material; (C-1) forming a first overcoat layer of material overlying the patterned layer of the first sacrificial material and the second material in the regions bordered by the first sacrificial material; (C-2) forming a patterned layer of a second sacrificial material on the first overcoat layer corresponding to a pattern of one or more gaps to be formed in the semiconductor structure; (C-3) depositing a third material on the first overcoat layer within regions bordered by the second sacrificial material; (C-4) forming a second overcoat layer of material overlying the patterned layer of the second sacrificial material and the third material in the regions bordered by the second sacrificial material; (D′) causing the first and second sacrificial materials to decompose into one or more gaseous decomposition products; and (E′) removing at least one of the one or more gaseous decomposition products by passage through the overcoat layers so that one or more air gaps are formed within the semiconductor structure, wherein the first and second sacrificial materials are independently selected from one or more norbornene polymers, polycarbonate polymers, polyester polymers, polyether polymers, methacrylate polymers, acrylate polymers, or mixtures thereof.

Claim 55

Independent Claim 253 words

A method of forming one or more air gaps in a semiconductor structure comprising the steps of: (A) forming a patterned layer of a first sacrificial material on one side of a substrate corresponding to a pattern of one or more gaps to be formed in the semiconductor structure; (B) depositing a second material on the substrate within regions bordered by the first sacrificial material; (C-1) forming a first overcoat layer of material overlying the patterned layer of the first sacrificial material and the second material in the regions bordered by the first sacrificial material; (C-2) forming a patterned layer of a second sacrificial material on the first overcoat layer corresponding to a pattern of one or more gaps to be formed in the semiconductor structure; (C-3) depositing a third material on the first overcoat layer within regions bordered by the second sacrificial material; (C-4) forming a second overcoat layer of material overlying the patterned layer of the second sacrificial material and the third material in the regions bordered by the second sacrificial material; (D′) causing the first and second sacrificial materials to decompose into one or more gaseous decomposition products; and (E′) removing at least one of the one or more gaseous decomposition products by passage through the overcoat layers so that one or more air gaps are formed within the semiconductor structure, wherein the first and second sacrificial materials are independently selected from one or more norbornene polymers, polycarbonate polymers, polyester polymers, polyether polymers, methacrylate polymers, acrylate polymers, or mixtures thereof.

Claim 56

Independent Claim 151 words

A method of forming one or more air gaps in a semiconductor structure comprising the steps of: using a sacrificial material to occupy at least one first closed interior volume in a semiconductor structure and using a conductive material to occupy at least one second closed interior volume in a semiconductor structure, the at least one first closed interior volume and the at least one second closed interior volume defining at least one gap therebetween; forming an overcoat layer of material on the sacrificial material and the conductive material with the overcoat material extending into the at least one gap; causing the sacrificial material to decompose into one or more gaseous decomposition products; and removing at least one of the one or more gaseous decomposition products by passage through the first overcoat layer so that one or more air gaps are formed within the semiconductor structure, thereby yielding overcoated conductive structures.

Claim 57

Independent Claim 151 words

A method of forming one or more air gaps in a semiconductor structure comprising the steps of: using a sacrificial material to occupy at least one first closed interior volume in a semiconductor structure and using a conductive material to occupy at least one second closed interior volume in a semiconductor structure, the at least one first closed interior volume and the at least one second closed interior volume defining at least one gap therebetween; forming an overcoat layer of material on the sacrificial material and the conductive material with the overcoat material extending into the at least one gap; causing the sacrificial material to decompose into one or more gaseous decomposition products; and removing at least one of the one or more gaseous decomposition products by passage through the first overcoat layer so that one or more air gaps are formed within the semiconductor structure, thereby yielding overcoated conductive structures.

Claim 58

Dependent Claim 25 words

The method of claim 51 , wherein the overcoat material completely fills the one or more gaps between the sacrificial material and the conductive material.

Claim 59

Dependent Claim 31 words

The method of claim 51 , wherein the sacrificial material is selected from one or more norbornene polymers, polycarbonate polymers, polyester polymers, polyether polymers, methacrylate polymers, acrylate polymers, or mixtures thereof.

Claim 60

Dependent Claim 18 words

The method of claim 53 , wherein the sacrificial material is selected from one or more norbornene polymers.

Claim 61

Dependent Claim 30 words

The method of claim 51 , wherein the height of the at least one first closed interior volume exceeds the height of the at least one second closed interior volume.

Claim 62

Dependent Claim 30 words

The method of claim 51 , wherein the height of the at least one second closed interior volume exceeds the height of the at least one first closed interior volume.

Claim 63

Dependent Claim 95 words

The method of claim 51 , wherein the sacrificial material is a polycarbonate polymer comprises repeating units represented by the general formula of: where R represents linear and branched (C 1 to C 20 ) alkyl, hydrocarbyl substituted and unsubstituted (C 5 to C 12 ) cycloalkyl, hydrocarbyl substituted and unsubstituted (C 6 to C 40 ) aryl, hydrocarbyl substituted and unsubstituted (C 7 to C 15 ) aralkyl, (C 3 to C 20 ) alkynyl, linear and branched (C 3 to C 20 ) alkenyl and n is equal to 2 to about 100,000.

Claim 64

Dependent Claim 15 words

The method of claim 57 , wherein n is equal to 2 to about 10,000.

Claim 65

Dependent Claim 21 words

The method of claim 57 , wherein the sacrificial material is selected from polyethylene carbonate, polyproplyene carbonate or a mixture thereof.

Claim 66

Dependent Claim 104 words

The method of claim 51 , wherein the sacrificial material is a polyester polymer comprises repeating units represented by the general formula of: where R represents linear and branched (C 1 to C 20 ) alkyl, hydrocarbyl substituted and unsubstituted (C 5 to C 12 ) cycloalkyl, hydrocarbyl substituted and unsubstituted (C 6 to C 40 ) aryl, hydrocarbyl substituted and unsubstituted (C 7 to C 15 ) aralkyl, (C 3 to C 20 ) alkynyl, linear and branched (C 3 to C 20 ) alkenyl; x is an integer from 1 to about 20; and n is equal to 2 to about 100,000.

Claim 67

Dependent Claim 15 words

The method of claim 60 , wherein n is equal to 2 to about 10,000.

Claim 68

Dependent Claim 16 words

The method of claim 60 , wherein x is an integer from 1 to about 10.

Claim 69

Dependent Claim 100 words

The method of claim 51 , wherein the sacrificial material is a polyether polymer comprises repeating units represented by the general formula of: where R 20 and R 21 independently represent linear and branched (C 1 to C 20 ) alkyl, hydrocarbyl substituted and unsubstituted (C 5 to C 12 ) cycloalkyl, hydrocarbyl substituted and unsubstituted (C 6 to C 40 ) aryl, hydrocarbyl substituted and unsubstituted (C 7 to C 15 ) aralkyl, (C 3 to C 20 ) alkynyl, linear and branched (C 3 to C 20 ) alkenyl and n is equal to 2 to about 100,000.

Claim 70

Dependent Claim 15 words

The method of claim 63 , wherein n is equal to 2 to about 10,000.

Claim 71

Dependent Claim 38 words

The method of claim 51 , wherein the sacrificial material is selected from a polymethyl methacrylate, an acrylate polymer or a mixture thereof where the polymers present each have a molecular weight of about 1,000 to about 1,000,000.

Claim 72

Dependent Claim 24 words

The method of claim 65 , wherein the polymethyl methacrylate and/or the acrylate polymer has a molecular weight of about 100,000 to about 250,000.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2006-08-25	2007-02-24	2007-08-26	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2010-08-25	2011-02-24	2011-08-26	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2014-08-25	2015-02-24	2015-08-26	$7700.00	Window Closed / Lapsed

Fabrication of semiconductor device with air gaps for ultra low capacitance interconnections and methods of making same

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