US6150705A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dielectric-polysilicon-dielectric-polysilicon-dielectric antifuse for field programmable logic application
Assignee: Microsemi SoC Corp
•
Filing: 1995-12-13
•
Granted: 2000-11-21
•
Expires: 2015-12-13
Abstract
Abstract A novel antifuse structure includes a novel antifuse material layer comprises a first dielectric layer, a first polysilicon layer (which may optionally be lightly doped) disposed over the first dielectric layer, and a second dielectric layer disposed over the first polysilicon layer. The dielectric layers may be formed of silicon nitride, silicon dioxide, silicon oxynitride and combinations of the foregoing. Additional layers may also be included to form D/P/D/P/D, D/P/D/a-Si/D sandwiches, and the like. The polysilicon layer provides the ability to control the breakdown voltage of the antifuse through control of the doping level while maintaining a relatively large thickness of the antifuse material layer resulting in low capacitance for the antifuse. The antifuse material layer is compatible with high temperature processes (500° C.-950° C.) and may be carried out in the range of 400° C.-950° C. making it compatible with a wide range of processes.
Inventors
- 👤 Wenn-Jei Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 18:34
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491; Y; Y10; Y10S; Y10S148/00; Y10S148/055
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
99 words
An antifuse structure comprising: a lower antifuse electrode; an antifuse material layer disposed over and in electrical contact with said lower antifuse electrode; and an upper antifuse electrode disposed over and in electrical contact with said antifuse material layer; said antifuse material layer including: a first dielectric layer; a first polysilicon layer disposed on said first dielectric layer; a second dielectric layer disposed on said first polysilicon layer, said second dielectric layer being a single, continuous dielectric layer; a second polysilicon layer disposed on said second dielectric layer; and a third dielectric layer disposed on said second polysilicon layer.
Claim 2
Dependent Claim
99 words
An antifuse structure comprising: a lower antifuse electrode; an antifuse material layer disposed over and in electrical contact with said lower antifuse electrode; and an upper antifuse electrode disposed over and in electrical contact with said antifuse material layer; said antifuse material layer including: a first dielectric layer; a first polysilicon layer disposed on said first dielectric layer; a second dielectric layer disposed on said first polysilicon layer, said second dielectric layer being a single, continuous dielectric layer; a second polysilicon layer disposed on said second dielectric layer; and a third dielectric layer disposed on said second polysilicon layer.
Claim 3
Dependent Claim
17 words
The antifuse structure according to claim 1 wherein said lower antifuse electrode is formed of a metal.
Claim 4
Dependent Claim
17 words
The antifuse structure according to claim 2 wherein said upper antifuse electrode is formed of a metal.
Claim 5
Dependent Claim
17 words
The antifuse structure according to claim 1 wherein said upper antifuse electrode is formed of a metal.
Claim 6
Dependent Claim
16 words
The antifuse structure according to claim 1 wherein said lower antifuse electrode is a diffusion region.
Claim 7
Dependent Claim
18 words
The antifuse structure according to claim 1 wherein said lower antifuse electrode is formed of heavily doped polysilicon.
Claim 8
Dependent Claim
18 words
The antifuse structure according to claim 6 wherein said upper antifuse electrode is formed of heavily doped polysilicon.
Claim 9
Dependent Claim
18 words
The antifuse structure according to claim 1 wherein said upper antifuse electrode is formed of heavily doped polysilicon.
Claim 10
Dependent Claim
63 words
An antifuse material layer for an antifuse comprising: a first dielectric layer; a first polysilicon layer disposed on said first dielectric layer; a second dielectric layer disposed on said first polysilicon layer, said second dielectric layer being a single, continuous dielectric layer; a second polysilicon layer disposed on said second dielectric layer; and a third dielectric layer disposed on said second polysilicon layer.
Claim 11
Dependent Claim
63 words
An antifuse material layer for an antifuse comprising: a first dielectric layer; a first polysilicon layer disposed on said first dielectric layer; a second dielectric layer disposed on said first polysilicon layer, said second dielectric layer being a single, continuous dielectric layer; a second polysilicon layer disposed on said second dielectric layer; and a third dielectric layer disposed on said second polysilicon layer.
References Cited (Backward Citations)
FR2367352A1
Cited
GB2038552B
Cited
US4502208A
Cited
US4489481A
Cited
US4847732A
Cited
US4796075A
Cited
US4651409A
Cited
US4870302A
Cited
US4748490A
Cited
US4899205A
Cited
US5266829A
Cited
US4943538A
Cited
US4823181A
Cited
US5134457A
Cited
US5093982A
Cited
US5075249A
Cited
US4822753A
Cited
US4933576A
Cited
US4882611A
Cited
GB2222024B
Cited
US5093711A
Cited
US4914055A
Cited
EP0414361A2
Cited
EP0416903A2
Cited
US5191550A
Cited
US5272101A
Cited
US5057451A
Cited
EP0452091A2
Cited
US5404029A
Cited
US5763898A
Cited
US5070384A
Cited
US5866937A
Cited
EP0455414A1
Cited
US5194759A
Cited
US5401993A
Cited
US5106773A
Cited
US5095362A
Cited
US5087958A
Cited
US5163180A
Cited
EP0501120A2
Cited
US5166556A
Cited
EP0500034A1
Cited
US5100827A
Cited
US5322812A
Cited
US5196724A
Cited
US5233217A
Cited
US5120679A
Cited
US5290734A
Cited
US5242851A
Cited
US5304508A
Cited
US5302546A
Cited
EP0528417A2
Cited
US5241496A
Cited
US5328865A
Cited
US5286993A
Cited
US5126290A
Cited
US5110754A
Cited
US5272666A
Cited
US5353246A
Cited
EP0539197A1
Cited
US5171715A
Cited
US5233206A
Cited
US5298784A
Cited
US5329153A
Cited
US5250459A
Cited
US5327024A
Cited
US5293133A
Cited
US5525830A
Cited
US5381035A
Cited
US5284788A
Cited
US5248632A
Cited
US5308795A
Cited
US5395797A
Cited
US5482884A
Cited
US5412245A
Cited
US5387311A
Cited
US5270251A
Cited
US5332929A
Cited
US5300456A
Cited
US5390141A
Cited
US5789796A
Cited
US5391518A
Cited
US5427979A
Cited
WO1995014310A1
Cited
US5485031A
Cited
US5391513A
Cited
US5403778A
Cited
US5412593A
Cited
US5834824A
Cited
US5572062A
Cited
US5521440A
Cited
US5789764A
Cited
US5763299A
Cited
WO1996041374A1
Cited
US5844297A
Cited
EP0857357A1
Cited
EP0860025A1
Cited
EP0858675A1
Cited
US5821558A
Cited
US5726484A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-21 | 2004-05-22 | 2004-11-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-21 | 2008-05-22 | 2008-11-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-21 | 2012-05-22 | 2012-11-21 | $7700.00 | Window Closed / Lapsed |